| STRUCTURAL IMPERFECTIONS IN SILICON P-N JUNCTIONS. (2006) | |||||||||
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| Investigations of imperfections in pn junctions continued. The avalanche effect and its rela tionship to imperfections was studied. Diffu sion technology suitable for the achievement of uniform avalanche breakdown diodes permitted detailed study of some known effects and dis covery of new phenomenon. It was found that the application of an isotropic stress to a pn junc tion reversibly lowers the breakdown voltage. Microplasma breakdown at stacking faults in epi taxially grown Si is discussed. It was shown for the first time that stacking faults, a very frequent imperfection in epitaxial Si, have a deleterious effect on device properties. Other studies included: avalanche noise in uniform junctions and microplasmas; avalanche light emission in uniform junctions which can be ex tinguished or enhanced by mechanical damage; improvement of diffusion technology. A review of avalanche breakdown in Si is included. (Author) | |||||||||
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