|
Investigation of residual dislocations in VGF-grown Si-doped GaAs (2005) |
- Birkmann, B.,
- Stenzenberger, J.,
- Jurisch, M.,
- Härtwig, J.,
- Alex, V.,
- Müller, G.
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Details der Publikation |
| Archiv |
Fraunhofer Publica (Germany) |
| Typ |
Journal Article
|
| Sprache |
english
|
| Verknüpfungen |
Journal of Crystal Growth, Vol.276 (2005), No.3-4, pp.335-346
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