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InP-based OEIC fabrication technology for 40 Gbit/s broadband and 38/60 GHz narrowband photoreceivers (2000) |
- Schlaak, W.,
- Engel, Th.,
- Umbach, A.,
- Passenberg, W.,
- Steingrüber, R.,
- Seeger, A.,
- Schramm, C.,
- Mekonnen, G.G.,
- Unterborsch, G.,
- Bimberg, D.
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Abstract |
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Ultrafast 1.55 mu m photoreceivers are key elements for future long-haul communication systems operating at bitrates of 40 Gbit/s, as well as for mobile access systems using 38 GHz or 60 GHz carrier frequencies for data-rates of up to 155 Mbit/s. Therefore, a versatile integration concept for InP-based coplanar designed OEMMICs for the 1.55 mu m wavelength regime is demonstrated, which allows independent optimization of the constituting devices. |
Details der Publikation |
| Archiv |
Fraunhofer Publica (Germany) |
| Keywords |
iii-v semiconductors,
indium compounds,
integrated optoelectronics,
mmic,
optical receivers,
ultrafast photoreceivers,
optoelectronic microwave monolithic integrated circuits,
oemmic,
optimization,
narrowband photoreceivers,
broadband photoreceivers,
oeic fabrication technology,
38 GHz,
60 GHz,
1.55 micron,
40 Gbit/s,
155 mbit/s,
inp
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| Typ |
Conference Paper
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| Sprache |
english
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| Verknüpfungen |
Ploog, K.H. et al.: Compound Semiconductors 1999. Proceedings of the 26th International Symposium on Compound Semiconductors: Berlin, Germany, 22 - 26 August 1999. Bristol: IOP Publishing, 2000. (Institute of Physics - Conference Series 166), pp. 399ff
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