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Growth of GaN crystals and epilayers from solutions at ambient pressure (2004) |
- Meissner, E.,
- Sun, G.,
- Hussy, S.,
- Birkmann, B.,
- Friedrich, J.,
- Müller, G.
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Details der Publikation |
| Archiv |
Fraunhofer Publica (Germany) |
| Keywords |
GaN,
low pressure solution growth,
III-V semiconductor
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| Typ |
Conference Paper
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| Sprache |
english
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| Verknüpfungen |
Japan Society of Applied Physics -JSAP-: 21st Century COE Joint International Workshop on Bulk Nitrides 2003. Proceedings: June 2 and 3, 2003, Tokyo, Japan. Tokyo: The Institute of Pure and Applied Physics (IPAP), 2004. (IPAP Conference Series 4)
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