| Heterogenous integration of InP/InGaAsP photodetectors onto ultracompact Silicon-on-Insulator waveguide circuits (2006) | |||||||||
Abstract | |||||||||
| We present the heterogeneous integration of InP/InGaAsP photodetectors onto ultracompact Silicon-on-Insulator (SOI) waveguide circuits using benzocyclobutene (BCB) die to wafer bonding. This technology development enables the integration of a photonic interconnection layer in top of CMOS. Fabrication processes were optimized and the transfer of a passive Silicon-on-Insulator waveguide layer using BCB was assessed. | |||||||||
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