| Verfahren zur trockenchemischen Behandlung von Substraten, sowie dessen Verwendung (2007) | |||||||||
Abstract | |||||||||
| DE 102005058713 A1 UPAB: 20070822 NOVELTY - Purifying a silicon, ceramic, glass or quartz glass substrate with an etching gas comprising chlorine or a chlorine compound in a heated reaction chamber comprises selecting the temperature and concentration of the etching gas so that impurities in the bulk of the substrate are at least partially removed. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) texturing a wafer with a texturing gas comprising chlorine or a chlorine compound in a heated reaction chamber; (2) silicon, ceramic, glass or quartz glass substrate purified as above. USE - The process is useful for bulk purification of substrates, especially wafers and ceramics (claimed). A process as above in which a surface layer is also istropically etched and removed is useful for removing surfaces impurities from substrates and removing crystal defects from wafers (claimed). A process as above in which a surface layer is removed and the surface of the substrate is isotropically textured is useful for texturing wafers (claimed) ADVANTAGE - The process is simple. | |||||||||
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