| Lateral magnetic anisotropy superlattice out of a single (Ga,Mn)As layer (2009) | |||||||||
Abstract | |||||||||
| We use lithographically induced strain relaxation to periodically modulate the magnetic anisotropy in a single (Ga,Mn)As layer. This results in a lateral magnetoresistance device where two non-volatile magnetic states exist at zero external magnetic field with resistances resulting from the orientation of two lithographically defined regions in a single and contiguous layer.. Comment: 5 pages, 7 figures | |||||||||
Details der Publikation | |||||||||
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