| Comparative Accuracy Study of Current-Mode versus Voltage Mode Analog Memory in 0.25µm Technology. (2008) | |||||||||||||
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| The aim of this work is the study of switched-current and voltage-mode memory cells in order to develop a model including non-ideal effects such as charge injections, nonlinear capacitance and readout system influence. These models will allow non-linearity control regard to surface, speed and power criteria in digital dedicated submicrometer technology. Such models lead to a memory cell optimization in order to include it in an analog memory. The goal of our work is to identify accuracy limits that can be reached with minimum size architectures in a deep submicrometer technology (0.25 m) for both types of cells: voltage mode and current mode. By studying operating phases of each cell, we have developed theoretical models that include non-linear effects. | |||||||||||||
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