| Tunneling anisotropic magnetoresistance in organic spin valves (2009) | |||||||||
Abstract | |||||||||
| We report the observation of tunneling anisotropic magnetoresistance (TAMR) in an organic spin valve with only one ferromagnetic electrode. The spin valve is based on a new high mobility perylene diimide-based n-type organic semiconductor. We attribute the TAMR to tunneling injection processes from the epitaxial Lanthanum Strontium Manganite electrode which dominates the transport properties. The typical switching pattern originates from the magnetocrystaline anisotropy of the epitaxial magnetic electrode.. Comment: 8 pages, 8 figures | |||||||||
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