Publikationsansicht

Comment on "Reduction of interface state density in 4H-SiC n-type metal-oxide-semiconductor structures using high-temperature hydrogen annealing" (2001)

Bassler, M.,
Pensl, G.,
Schulz, M. J.

Details der Publikation

Herausgeber	American Institute of Physics
Archiv	Lirias is a research document repository at KULeuven (Belgium)
Typ	Description (Metadata) only, IT, article
Sprache	Englisch
Verknüpfungen	Applied Physics Letters vol:78 issue:25 pages:4043-4044