| Crystal-orientation dependant spin dephasing for 2D and bulk electrons in GaAs wires (2009) | |||||||||
Abstract | |||||||||
| We report the observation of spin dephasing anisotropy for quasi-1D electron ensembles in wires etched into a GaAs/AlGaAs heterojunction system. Time-resolved Kerr rotation measurements show suppressed dephasing for wires along specific crystal directions. These effects result from an anisotropy for spin-orbit fields that occurs when the Rashba and Dresselhaus contributions are of similar magnitude. A surprising observation is that spin dephasing anisotropy is not only observed for electrons in the heterojunction quantum well, but also for electrons in a deeper bulk layer.. Comment: 5 pages, 3 figures | |||||||||
Details der Publikation | |||||||||
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