Erlbacher, T., Graf, T., DasGupta, N., Bauer, A.J., Ryssel, H.
In this paper the application of thin high-k dielectrics as capping layers on oxide/nitride/oxide memory stacks with respect to suppression of electron injection from the gate electrode during erase...
Erlbacher, T., Graf, T., DasGupta, N., Bauer, A.J., Ryssel, H.
In this paper the application of thin high-k dielectrics as capping layers on oxide/nitride/oxide memory stacks with respect to suppression of electron injection from the gate electrode during erase...
Grieb, M., Peters, D., Bauer, A.J., Friedrichs, P., Ryssel, H.
The reliability of thermal oxides grown on n-type 4H-SiC C(000-1) face wafer has been investigated. In order to examine the influence of different oxidation atmospheres and temperatures on the...
Weinreich, W., Wilde, L., Kücher, P., Lemberger, M., Yanev, V., Rommel, M., ...
Tunneling atomic force microscopy \'01TUNA\'02 is used to identify leakage current characteristics in SiO2 doped ZrO2 thin films within the nanometer scale. TUNA current maps and local TUNA I-V...
Fet, A., Häublein, V., Bauer, A.J., Ryssel, H.
While the debate about the exact cause of Fermi level pinning in metal-high-k dielectric gate stacks is ongoing, several solutions for engineering the threshold voltage V-t of the gate stacks have...
Schmitt, H., Amon, B., Beuer, S., Petersen, S., Rommel, M., Bauer, A.J., ...
Imprint specific process parameters like the residual layer thickness and the etch resistance of the UV polymers for the substrate etch process have to be optimized to introduce UV nanoimprint...
Experimental observation of FIB induced lateral damage on silicon samples (2009)
Spoldi, G., Beuer, S., Rommel, M., Yanev, V., Bauer, A.J., Ryssel, H.
Scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM) were used to analyze focused ion beam (FIB) induced lateral damage around milled structures on silicon. For...
Yanev, V., Erlbacher, T., Rommel, M., Bauer, A.J., Frey, L.
High-k dielectrics exhibit strong variations in their electrical characteristics on the nanometer scale due to morphology alteration. Therefore, electrical measurement techniques with nanometer...
Electrical characterization of MOS structures with deposited oxides annealed in N2O or NO (2009)
Grieb, M., Noborio, M., Peters, D., Bauer, A.J., Friedrichs, P., Kimoto, T., ...
In this work, the electrical characteristics and the reliability of 80nm thick deposited oxides annealed in NO and N2O on the 4H-SiC Si-face for gate oxide application in MOS devices is analyzed by...
Weinreich, W., Reiche, R., Lemberger, M., Jegert, G., Müller, J., Wilde, L., ...
Polarity asymmetries in JSV and CSV characteristics of symmetrical MIM capacitors with amorphous and crystalline Zr(1\'02x)AlxO2 films and TiN electrodes are evaluated. Physical analysis of the...
Analysis of the DC-arc behavior of a novel 3D-active fuse (2009)
Dorp, J. Vom, Berberich, S.E., Bauer, A.J., Ryssel, H.
In this work, the DC-arc behavior of an active fuse integrated into a CMOS process is described. The purpose of this fuse is to prevent serious hazards in power electronics in the case of a...
Lanthanum implantation for threshold voltage control in metal/high-k devices (2009)
Fet, A., Häublein, V., Bauer, A.J., Ryssel, H., Frey, L.
In this paper the tuning of the n-metal effective work function by implantation of lanthanum is demonstrated. The effect of implantation and thermal annealing on the device flat-band voltage is...
Weinreich, W., Ignatova, V.A., Wilde, L., Teichert, S., Lemberger, M., Bauer, A.J., ...
The influence of the annealing atmosphere and temperature on the crystalline phase and composition of thin ZrO2 layers grown by atomic layer deposition on silicon is analyzed. These physical...
Silicon based trench hole power capacitor (2009)
Berberich, S.E., Dorp, J. Vom, Bauer, A.J., Ryssel, H.
In this work, we introduce a high voltage 3D-capacitor as a novel passive power device for a 400V application. This device is realized in silicon technology which allows high process reproducibility,...
Schmitt, H., Rommel, M., Bauer, A.J., Frey, L., Bich, A., Eisner, M., ...
The fabrication of microlenses is of great interest for several applications in the field of optics like wafer level cameras, homogenization of light, and coupling of light into glass fibers....
Schmitt, H., Rommel, M., Bauer, A.J., Frey, L., Bich, A., Eisner, M., ...
The fabrication of microlenses is of great interest for several applications in the field of optics like wafer level cameras, homogenization of light, and coupling of light into glass fibers....
Rommel, M., Bauer, A.J., Ryssel, H.
In this work, an extensive injection-level-dependent carrier lifetime study on intentionally iron-contaminated boron-doped silicon has been performed by using the Elymat carrier lifetime method. The...
SSRM characterisation of FIB induced damage in silicon (2008)
Beuer, S., Yanev, V., Rommel, M., Bauer, A.J., Ryssel, H.
Scanning spreading resistance microscopy (SSRM) has been applied to study focused ion beam (FIB) induced damage in silicon in dependence on ion irradiation doses from 10(exp 12) cm-2 to 2·10(exp 16)...
Beuer, S., Rommel, M., Petersen, S., Amon, B., Sulzbach, T., Engl, W., ...
Recent improvements in the fabrication of integrated field emitters with a control electrode into scanning probe microscopy sensors are presented and discussed. Compared to earlier work the precursor...
Custom-specific UV nanoimprint templates and life-time of antisticking layers (2008)
Schmitt, H., Zeidler, M., Rommel, M., Bauer, A.J., Ryssel, H.
UV nanoimprint lithography (UV NIL) is attracting more and more interest, because of its potential to become a high-resolution, low-cost patterning technique. To establish UV NIL as a low-cost...
Paskaleva, A., Yanev, V., Rommel, M., Lemberger, M., Bauer, A.J.
In this work, tunneling atomic force microscopy (TUNA) is used to describe the charge trapping in high-k ZrO2 dielectric stacks at nanoscale dimensions by analyzing the alteration of the I-V curves...
HfSiO/SiO2- and SiO2/HfSiO/SiO2-gate stacks for non-volatile memories (2008)
Erlbacher, T., Jank, M.P.M., Lemberger, M., Bauer, A.J., Ryssel, H.
The use of hafnium silicate (HfSiO) as a charge trapping layer in charge-based non-volatile memory cells will be discussed. First, fundamental properties (e.g., dielectric constant, trap...
Hightech-Materialien für die Elektronik von morgen (2008)
Jank, M.P., Bauer, A.J., Fischer, B., Slama, A., Potinecke, T.
Custom-specific UV nanoimprint templates and life-time of antisticking layers (2008)
Schmitt, H., Zeidler, M., Rommel, M., Bauer, A.J., Ryssel, H.
UV nanoimprint lithography (UV NIL) is attracting more and more interest, because of its potential to become a high-resolution, low-cost patterning technique. To establish UV NIL as a low-cost...
HfSiO/SiO2- and SiO2/HfSiO/SiO2-gate stacks for non-volatile memories (2008)
Erlbacher, T., Jank, M.P.M., Lemberger, M., Bauer, A.J., Ryssel, H.
The use of hafnium silicate (HfSiO) as a charge trapping layer in charge-based non-volatile memory cells will be discussed. First, fundamental properties (e.g., dielectric constant, trap...
DC-arc behavior of a novel active fuse (2008)
Dorp, J. Vom, Berberich, S.E., Bauer, A.J., Ryssel, H.
In this work, new results on an active fuse which is a novel power device to prevent serious hazards in power electronics in the case of a malfunction are presented. The focus of this work is on the...
Yanev, V., Rommel, M., Lemberger, M., Petersen, S., Amon, B., Erlbacher, T., ...
High-k dielectric layers (HfSixOy and ZrO2) with different film morphologies were investigated by tunneling atomic-force microscopy (TUNA). Different current distributions were observed for amorphous...
Yanev, V., Rommel, M., Spoldi, G., Beuer, S., Amon, B., Petersen, S., ...
Yanev, V., Rommel, M., Spoldi, G., Beuer, S., Amon, B., Petersen, S., ...
Hafnium silicate as control oxide in non-volatile memories (2007)
Erlbacher, T., Bauer, A.J., Ryssel, H.
SONOS-type MIS capacitors with hafnium silicate as a control oxide are characterized and compared to devices featuring a conventional SONOS gate stack. Write operation is comparable for both gate...
Lemberger, M., Thiemann, S., Baunemann, A., Parala, H., Fischer, R.A., Hinz, J., ...
Tantalum nitride films obtained by MOCVD using a tert-butylimido-tris-ethylmethylamido-tantalum (TBTEMT, Ta(NCMe3)(NEtMe)(3)) compound were physically and electrically investigated. Lowest...
Accurate parameter extraction for the simulation of direct structuring by ion beams (2007)
Beuer, S., Rommel, M., Lehrer, C., Platzgummer, E., Kvasnica, S., Bauer, A.J., ...
In this work, methods for an accurate extraction of parameters for the simulation of nanoscaled structuring by focused ion beams will be discussed. For this purpose the quantitative understanding of...
Rommel, M., Bauer, A.J., Ryssel, H.
In this work, an extensive injection level dependent carrier lifetime study on intentionally iron contaminated boron-doped silicon has been performed by using the Elymat carrier lifetime method. The...
Beuer, S., Rommel, M., Petersen, S., Amon, B., Sulzbach, T., Engl, W., ...
High voltage 3D-capacitor (2007)
Berberich, S.E., Bauer, A.J., Ryssel, H.
In this work, we introduce a high voltage 3D-capacitor as a novel passive power device for a 400 V application. This device is realized in silicon technology which allows process reproducibility,...
Beuer, S., Rommel, M., Petersen, S., Amon, B., Sulzbach, T., Engl, W., ...
Hafnium silicate as control oxide in non-volatile memories (2007)
Erlbacher, T., Bauer, A.J., Ryssel, H.
SONOS-type MIS capacitors with hafnium silicate as a control oxide are characterized and compared to devices featuring a conventional SONOS gate stack. Write operation is comparable for both gate...
Paskaleva, A., Atanassova, E., Lemberger, M., Bauer, A.J.
Results on leakage currents and conduction mechanisms in various high-k dielectric layers (Zr-, Hf-, HfTi-silicates and Ta2O5) are presented. It is demonstrated that small alteration of the...
MOCVD of conductive cubic HfN thin films from Hf(NR2)4 and N,N-dimethylhydrazine (2005)
Kim, Y., Parala, H., Bauer, A.J., Lemberger, M., Baunemann, A., Fischer, R.A.
Annealing of aluminum implanted 4H-SiC: Comparison of furnace and lamp annealing (2005)
Rambach, M., Bauer, A.J., Frey, L., Friedrichs, P., Ryssel, H.
Furnace annealing and lamp annealing of aluminum implanted layers in 4H silicon carbide (SiC) were investigated with respect to surface degradation and electrical parameters. A sheet resistance of...
Rommel, M., Groß, M., Frey, L., Bauer, A.J., Ryssel, H.
In this work, a new method is presented for a direct and fast extraction of effective interface state densities Dit,eff at semiconductor insulator interfaces from photocurrent measurements. A...
Rommel, M., Groß, M., Ettinger, A., Lemberger, M., Bauer, A.J., Frey, L., ...
In this work, silicon insulator interfaces are characterized by detailed photocurrent analysis. Results obtained for a variety of samples with different insulator layers and layer thicknesses are...
MOCVD of cunductive cubic HfN thin films from Hf(NR2)4 and N,N-dimethylhydrazine (2005)
Kim, Y., Parala, H., Bauer, A.J., Lemberger, M., Baunemann, A., Fischer, R.A.
Investigation of rapid thermal annealed pn-junctions in SiC (2004)
Rambach, M., Weiss, R., Frey, L., Bauer, A.J., Ryssel, H.
Rapid thermal annealing (RTA) of 4H-silicon carbide (SiC) is investigated for the activation of Al implanted layers. The lowest sheet resistances achieved for an Al doping of 1(.)10(15)cm(-2) were...
Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors (2003)
Lemberger, M., Paskaleva, A., Zürcher, S., Bauer, A.J., Frey, L., Ryssel, H.
Zirconium silicate films obtained from novel MOCVD precursors (2003)
Lemberger, M., Paskaleva, A., Zürcher, S., Bauer, A.J., Frey, L., Ryssel, H.
Influence of antenna shape and resist patterns on charging damage during ion implantation (2003)
Dirnecker, T., Bauer, A.J., Beyer, A., Frey, L., Henke, D., Ruf, A., ...
Surface properties and electrical characteristics of rapid thermal annealed 4H-SiC (2003)
Bauer, A.J., Rambach, M., Frey, L., Weiss, R., Rupp, R., Friedrichs, P., ...
Trench sidewall doping for lateral power devices (2003)
Berberich, S.E., Bauer, A.J., Frey, L., Ryssel, H.
Sidewall doping of trenches with a high aspect ratio and a high grade of anisotropy (90° +- 0.5°) by ion implantation has been investigated. Two-dimensional (2D) process simulation and delineation...
Influence of photoresist pattern on charging damage during high current ion implantation (2002)
Dirnecker, T., Ruf, A., Frey, L., Beyer, A., Bauer, A.J., Henke, D., ...
The influence of photoresist pattern on charging damage of gate oxides during high current arsenic implantation is studied. Metal-oxide- semiconductor (MOS) capacitors of 10 mu m/sup 2/ active area...
Bauer, A.J., Froeschle, B., Beichele, M., Ryssel, H.
A cleaning process using anhydrous hydrofluoric acid/methanol (AHF) and ozone was carried out in a vapor phase cleaning module (VPC). The dependence of the AHF vapor phase etch rate of thermally...
Bauer, A.J., Herden, M., Ryssel, H.
The influence of nitrogen incorporated at the gate oxide interface on the reliability and electrical behavior of MOS capacitors was investigated. Incorporation of nitrogen was accomplished either by...
High quality 4 nm gate dielectrics prepared at low pressure in oxygen oxide atmospheres (1996)
Thin silicon oxide nitridation in N20 has been demonstrated to improve the dielectric characteristics in terms of charge to break-down and trapping under current injection. For the first time we...
Schnelle thermische Prozessierung und Charakterisierung dünner nitridierter Oxide (1995)
RTP (Rapid Thermal Processing) bietet insbesondere bei der Herstellung hoch qualitativer dünner dielektrischer Filme Alternativen zu den koventionellen Ofenprozessen. Die Vorteile dieser Technologie...