Gallium interstitial in irradiated germanium: Deep level transient spectroscopy (2008)
Kolkovsky, V, Petersen, MC, Mesli, A, Van Gheluwe, Jochen, Clauws, Paul, Larsen, AN
Two electronic levels at 0.34 eV above the valence band and 0.32 eV below the conduction band, in gallium doped, p-type Ge irradiated with 2 MeV electrons have been studied by deep level transient...
Stable and metastable configurations of iron atoms in SiGe alloys (2005)
Kolkovsky, V., Mesli, A., Dobaczewski, L., Abrosimov, N.V., Zytkiewicz, Z.R., Peaker, A.R
The antimony-vacancy defect in p-type germanium (2005)
Lindberg, C.E., Hansen Lundsgaard, J., Bomholt, P., Mesli, A., Nielsen Bonde, K., Nylandsted, A.Larsen, ...
Ion implantation induced damage in relaxed Si1-xGex (1996)
Barklie, R. C., O'Raifeartaigh, C., Nylandsted-Larsen, A., Priolo, F., Lulli, G., Grob, J. J., ...
Relaxed Si1-xGex layers with germanium contents of 0.04, 0.13, 0.24 and 0.36 have been grown by MBE and implanted under tightly controlled conditions with 2 MeV Si+ ions over the dose range 1×1010...
Development of microstrip gas chambers for radiation detection and tracking at high rates (1995)
Sauli, F, Bouclier, R, Garabatos, C, Meyer, T, Price, M, ...
Sauli, F, Bouclier, R, Garabatos, C, Meyer, T, Price, M, ...
Electrical properties of hydrogen bombarded silicon surfaces (1986)
Barhdadi, A., Ponpon, J.P., Grob, A., Grob, J.J., Mesli, A., Muller, J.C., ...
Electrical properties of hydrogen bombarded silicon surfaces (1986)
Barhdadi, A., Ponpon, J.P., Grob, A., Grob, J.J., Mesli, A., Muller, J.C., ...
Some problems arising in hydrogen passivation of silicon by ion bombardment techniques (1985)
Muller, J.C., Ababou, Y., Barhdadi, A., Mesli, A., Toulemonde, M., Siffert, P.
Electrical behaviour of thermally diffused silicon solar cells submitted to rapid annealing (1985)
Fogarassy, E., Mesli, A., Courcelle, E., Grob, A., Siffert, P.
Some problems arising in hydrogen passivation of silicon by ion bombardment techniques (1985)
Muller, J.C., Ababou, Y., Barhdadi, A., Mesli, A., Toulemonde, M., Siffert, P.
Electrical behaviour of thermally diffused silicon solar cells submitted to rapid annealing (1985)
Fogarassy, E., Mesli, A., Courcelle, E., Grob, A., Siffert, P.
ANALYSIS AND ORIGIN OF POINT DEFECTS IN SILICON AFTER LIQUID PHASE TRANSIENT ANNEALING (1983)
Mesli, A., Muller, J., Siffert, P.
Works devoted to the study of point defects in pulsed laser annealed silicon are reviewed by means of electrical characterization. Tailing effects of the implanted distribution are responsible for...
ANALYSIS AND ORIGIN OF POINT DEFECTS IN SILICON AFTER LIQUID PHASE TRANSIENT ANNEALING (1983)
Mesli, A., Muller, J., Siffert, P.
Works devoted to the study of point defects in pulsed laser annealed silicon are reviewed by means of electrical characterization. Tailing effects of the implanted distribution are responsible for...
ANALYSIS AND ORIGIN OF POINT DEFECTS IN SILICON AFTER LIQUID PHASE TRANSIENT ANNEALING (1983)
Mesli, A., Muller, J., Siffert, P.
Works devoted to the study of point defects in pulsed laser annealed silicon are reviewed by means of electrical characterization. Tailing effects of the implanted distribution are responsible for...
ANALYSIS AND ORIGIN OF POINT DEFECTS IN SILICON AFTER LIQUID PHASE TRANSIENT ANNEALING (1983)
Mesli, A., Muller, J., Siffert, P.
Works devoted to the study of point defects in pulsed laser annealed silicon are reviewed by means of electrical characterization. Tailing effects of the implanted distribution are responsible for...