A. Misiuk

Details der Publikationsliste

Zeitraum

1981 - 2008

Anzahl

37

Co-Autoren

Effect of Stress on Creation of Defects in Annealed Czochralski Grown Silicon (2007)

A. Misiuk

The effect of stress (exerted by hydrostatic pressure of argon ambient enhanced up to 1.2 GPa) on the creation of oxygen-related defects in annealed Czochralski grown silicon (Cz-Si) was...

Photoluminescence from Pressure - Annealed Nanostructured Silicon Dioxide and Nitride Films (2002)

Misiuk, A., Rebohle, L., Iller, A., Tyschenko, I. E., Jun, J.

Light emission in thin films (SiO2, SiO2:Si and Si3N4) on a single crystalline silicon surface has been investigated after treatment at enhanced argon pressure, HP. Pronounced effect of HP up to 1.5...

The Effect of High Pressure - High Temperature Treatment on Neutron Irradiation Induced Defects in Czochralski Silicon (2002)

Londos, C. A., Fytros, L. G., Misiuk, A., Bak-Misiuk, J., Prujszczyk, M.

Czochralski-grown (Cz-grown) silicon crystals of the same initial oxygen content (8.33 x 10(exp 7)/cu cm) were subjected to various high temperature - high pressure (HTHP) treatments for different...

Effect of Stress in Defect Transformation in Hydrogen Implanted Silicon and SOI Structures (2002)

Antonova, I. V., Popov, V. P., Bak-Misiuk, J., Domagala, J., Misiuk, A.

Transformation of defects in hydrogen implanted silicon and silicon-on-insulator structures caused by external pressure of argon ambient (up to 1.5 GPa) at the stage of defect removal in implanted...

High Temperature Oxidized SnO2 Films Prepared by Reactive Sputtering (1987)

G. Beensh-Marchwicka, L. Król-Stępniewska, A. Misiuk

Undoped and Sb-doped tin oxide films were prepared by d.c. reactive ion sputtering in an argon atmosphere with oxygen partial pressures ranging from 0 to 50%. The films were anneled in oxygen in the...

Ni-P as a New Material for Thick Film Technology (1981)

I. Barycka, B. Hołodnik, A. Misiuk

The product of nickel ions reduction in buffered solution by hypophosphite, known as Ni-P, was examined as a potentially useful material for thick film technology. This material, when mixed with...