Zhang, Jian F, Chang, Mo Huai, Peaker, A. R, Hall, Stephen, ...
A Hf-based dielectric has been selected to replace SiON for CMOS technologies. When compared with SiON, Hf dielectrics can suffer from higher instability. Previous attentions were focused on electron...
Evolution of Vacancy-Related Defects upon Annealing of Ion-Implanted Germanium (2008)
Slotte, J, Rummukainen, M, Tuomisto, F, Markevich, V P, Peaker, A R, Jeynes, C, ...
Positron annihilation spectroscopy was used to study defects created during the ion implantation and annealing of Ge. Ge and Si ions with energies from 600 keV to 2 MeV were implanted at fluences...
Zhao, C. Z, Chang, M. H, Zahid, M. B, Peaker, A. R, Hall, S, ...
For SiO2 or SiON, negative bias temperature instability (NBTI) generally follows a power law. There is less information available for the NBTI of Hf stacks and it will be studied and compared with...
Alloy Splitting of Gold and Platinum Acceptor Levels in SiGe L. Dobaczewski, (2007)
L. Dobaczewski, K. Goœciñski, K. Bonde Nielsen, A. Nyl, Sted Larsen, ...
rates of carriers from the defect and in optical absorption frequencies. This has the consequence that a deep-center energy level, upon alloying, appears to split into a manifold of components. The...
A. R. Peaker, L. Dobaczewski, V. Markevich, O. Andersen, L. Rubaldo, ...
Several recent studies indicate that there are major differences in the defect population between ion implanted and electron damaged silicon. The differences are more marked as the ion mass and the...
F. Coppinger, J. Genoe, L. B. Rigal, D. K. Maude, U. Gennser, J. C. Portal, ...
Using low temperature magnetotransport techniques we demonstrate that the electrical transport is phase coherent in a GaAs matrix containing self organising ErAs quantum dots and wires of the order...
ERBIUM RELATED DEFECTS IN GALLIUM ARSENIDE (2007)
A R Peaker, H Efeoglu, D K Maude, J-c Portal, P Rutter, ...
Abstract: This paper reviews our recent experimental work on erbium incorporated into gallium arsenide during MBE growth. The electrical behaviour of the erbium is considered in relation to its...
Hydrogen induced positive charge in Hf-based dielectrics (2007)
Zhang, J.F., Zahid, M.B., Efthymiou, E., Hall, S., ...
This work investigates the anneal-induced positive charge in Hf-based dielectrics. It is found that anneal in forming gas produces substantially more positive charge than that in N-2 at 500 degrees...
High-resolution DLTS of vacancy–donor pairs in P-, As- and Sb-doped silicon (2006)
Auret, F.D., Peaker, A.R., Markevich, V.P., Dobaczewski, L., Gwilliam, R.M.
We report results from an experiment designed to characterize, by high-resolution (Laplace) DLTS, the electronic properties of electron radiation induced E-centers in Si associated with P, Sb and As....
High-resolution DLTS of vacancy–donor pairs in P-, As- and Sb-doped silicon (2006)
Auret, F.D., Peaker, A.R., Markevich, V.P., Dobaczewski, L., Gwilliam, R.M.
We report results from an experiment designed to characterize, by high-resolution (Laplace) DLTS, the electronic properties of electron radiation induced E-centers in Si associated with P, Sb and As....
Stable and metastable configurations of iron atoms in SiGe alloys (2005)
Kolkovsky, V., Mesli, A., Dobaczewski, L., Abrosimov, N.V., Zytkiewicz, Z.R., Peaker, A.R
Saddle point for oxygen reorientation in the vicinity of a silicon vacancy (2003)
Dobaczewski, L., Andersen, O., Rubaldo, L., Gościński, K., Markevich, V. P., Peaker, A. R., ...
Electrical activity of carbon-hydrogen centers in Si (2002)
Andersen, O., Peaker, A.R., Dobaczewski, L., Bonde Nielsen, K., Hourahine, B., Jones, R., ...
The electrical activity of Cs-H defects in Si has been investigated in a combined modeling and experimental study. High-resolution Laplace capacitance spectroscopy with the uniaxial stress technique...
Electrical activity of carbon-hydrogen centers in Si (2002)
Andersen, O., Peaker, A.R., Dobaczewski, L., Bonde Nielsen, K., Hourahine, B., Jones, R., ...
The electrical activity of Cs-H defects in Si has been investigated in a combined modeling and experimental study. High-resolution Laplace capacitance spectroscopy with the uniaxial stress technique...
Electrical activity of carbon-hydrogen centers in Si (2002)
Andersen, O., Peaker, A.R., Dobaczewski, L., Bonde Nielsen, K., Hourahine, B., Jones, R., ...
The electrical activity of Cs-H defects in Si has been investigated in a combined modeling and experimental study. High-resolution Laplace capacitance spectroscopy with the uniaxial stress technique...
Piezoscopic deep-level transient spectroscopy studies of the silicon divacancy (2002)
Dobaczewski, L., Gościński, K., Żytkiewicz, Z. R., Nielsen, K. B., Rubaldo, L., Andersen, O., ...
It is shown that the divacancy in silicon in the diamagnetic doubly negative charge state has a static trigonal symmetry with inward breathing mode lattice relaxation. There is no measurable...
Vernon-Parry, K., Evans-Freeman, J., Hawkins, I. D., Dawson, P., Peaker, A. R.
The decay of the photoluminescence at 1.54 µm from erbium-implanted silicon has been recorded over nearly three decades of intensity. Two components of the decay are observed at 7.5 K, one with a...
Role of oxygen on the implantation related residual defects in silicon (2000)
Jianqing, Wen, Evans-Freeman, J., Peaker, A. R., Zhang, J. P., Hemment, Peter L. F., Marsh, C. D., ...
The role of oxygen concentration on the formation/evolution of residual defects in implanted and rapid thermal annealed silicon was studied in samples with various oxygen concentrations....
Vacancy-related defects in ion implanted and electron irradiated silicon (2000)
Peaker, A. R., Evans-Freeman, J. H., Kan, P. Y. Y., Hawkins, I. D., Terry, J., Jeynes, C., ...
Gold-hydrogen complexes in silicon. (1999)
Rubaldo, L., Deixler, P., Hawkins, I. D., Terry, J., Maude, D. K., Portal, J. C., ...
Hydrogen reactions with electron irradiation damage in silicon. (1999)
Peaker, A. R., Evans-Freeman, J. H., Kan, P. Y. Y., Rubaldo, L., Hawkins, I. D., Vernon-Parry, K. D., ...
Exchange splitting and spin disorder scattering in TmAs. (1998)
Rigal, L. B., Maude, D. K., Portal, J. C., Bennett, M., Singer, K. E., Peaker, A. R., ...
Magnetic characterization of self-organized ErAs clusters using telegraph noise spectroscopy. (1998)
Coppinger, F., Genoe, J., Maude, D. K., Kleber, X., Rigal, L. B., Gennser, U., ...