Zhigadlo, N. D., Katrych, S., Karpinski, J., Batlogg, B., Bernardini, F., Massidda, S., ...
The effects of high-temperature vacuum-annealing induced Mg deficiency in MgB2 single crystals grown under high pressure were investigated. As the annealing temperature was increased from 800 to 975...
Low-voltage organic transistors and inverters with ultra-thin fluoropolymer gate dielectric (2009)
Walser, M. P., Kalb, W. L., Mathis, T., Batlogg, B.
We report on the simple fabrication of hysteresis-free and electrically stable organic field-effect transistors (OFETs) and inverters operating at voltages
Bulk Superconductivity at 2.6 K in Undoped RbFe_2As_2 (2009)
Bukowski, Z., Weyeneth, S., Puzniak, R., Karpinski, J., Batlogg, B.
The iron arsenide RbFe_2As_2 with the ThCr_2Si_2-type structure is found to be a bulk superconductor with T_c=2.6 K. The onset of diamagnetism was used to estimate the upper critical field H_c2(T),...
Superconductivity at 23 K and Low Anisotropy in Rb-Substituted BaFe_2As_2 Single Crystals (2009)
Bukowski, Z., Weyeneth, S., Puzniak, R., Moll, P., Katrych, S., Zhigadlo, N. D., ...
Single crystals of Ba_{1-x}Rb_{x}Fe_2As_2 with x=0.05-0.1 have been grown from Sn flux and are bulk superconductors with T_c up to 23 K. The crystal structure was determined by X-ray diffraction...
Karpinski, J., Zhigadlo, N. D., Katrych, S., Bukowski, Z., Moll, P., Weyeneth, S., ...
A review of our investigations on single crystals of LnFeAsO1-xFx (Ln=La, Pr, Nd, Sm, Gd) and Ba1-xRbxFe2As2 is presented. A high pressure technique has been applied for the growth of LnFeAsO1-xFx...
Melting of the Na layers in solid Na0.8CoO2 (2008)
Weller, M., Sacchetti, A., Ott, H. R., Mattenberger, K., Batlogg, B.
Data of 23Na NMR spectra- and relaxation measurements are interpreted as suggesting that, upon increasing temperature the Na layers in Na0.8CoO2 adopt a 2D liquid state at T=291 K. The corresponding...
Pernstich, K. P., Rashid, A. N., Haas, S., Schitter, G., Oberhoff, D., Goldmann, C., ...
We demonstrate controllable shift of the threshold voltage and the turn-on voltage in pentacene thin film transistors and rubrene single crystal field effect transistors (FET) by the use of nine...
Hole mobility in organic single crystals measured by a "flip-crystal" field-effect technique (2004)
Goldmann, C., Haas, S., Krellner, C., Pernstich, K. P., Gundlach, D. J., Batlogg, B.
We report on single crystal high mobility organic field-effect transistors (OFETs) prepared on prefabricated substrates using a "flip-crystal" approach. This method minimizes crystal handling and...
Gate-induced superconductivity in a solution-processed organic polymer film (2001)
J. H. Schön, A. Dodabalapur, Z. Bao, Ch. Kloc, O. Schenker, B. Batlogg
Quantized phonon specrum of single-wall carbon nanotubes (2000)
Hone, J., Batlogg, B., Benes, Z., Johnson, A. T., Fischer, J. E.
The electronic spectra of carbon nanotubes and other nanoscale systems are quantized because of their small radii. Similar quantization in the phonon spectra has been difficult to observe because of...
Superconductivity in lanthanum nickel boro-nitride (1994)
R. J. Cava, H. W. Zandbergen, B. Batlogg, H. Eisaki, H. Takagi, J. J. Krajewski, ...
Superconductivity at 23 K in yttrium palladium boride carbide (1994)
R. J. Cava, H. Takagi, B. Batlogg, H. W. Zandbergen, J. J. Krajewski, W. F. Peck, ...
Antiferromagnetism and metallic conductivity in Nb12O29 (1991)
R. J. Cava, B. Batlogg, J. J. Krajewski, P. Gammel, H. F. Poulsen, W. F. Peck, ...
Superconductivity near 30 K without copper: the Ba0.6K0.4BiO3 perovskite (1988)
R. J. Cava, B. Batlogg, J. J. Krajewski, R. Farrow, L. W. Rupp, A. E. White, ...
L. F. Schneemeyer, R. B. Van Dover, S. H. Glarum, S. A. Sunshine, R. M. Fleming, B. Batlogg, ...
Phonons in Ba(Pb§0§.§7§5Bi§0§.§2§5)O§3. (1985)
Reichardt, W., Batlogg, B., Remeika, I.
Internat.Conf.on the Materials and Mechanisms of Superconductivity, Ames, Iowa, May 29-31, 1985
SEMICONDUCTOR-METAL TRANSITIONS IN TmSe-TmTe AND TmSe-EuSe (1980)
A semiconductor to metal transition (SMT) occurs either as a function of composition or external pressure in the TmSe-TmTe and TmSe-EuSe pseudobinary compounds. The transition is caused by the...
SEMICONDUCTOR-METAL TRANSITIONS IN TmSe-TmTe AND TmSe-EuSe (1980)
A semiconductor to metal transition (SMT) occurs either as a function of composition or external pressure in the TmSe-TmTe and TmSe-EuSe pseudobinary compounds. The transition is caused by the...
SEMICONDUCTOR-METAL TRANSITIONS IN TmSe-TmTe AND TmSe-EuSe (1980)
A semiconductor to metal transition (SMT) occurs either as a function of composition or external pressure in the TmSe-TmTe and TmSe-EuSe pseudobinary compounds. The transition is caused by the...
SEMICONDUCTOR-METAL TRANSITIONS IN TmSe-TmTe AND TmSe-EuSe (1980)
A semiconductor to metal transition (SMT) occurs either as a function of composition or external pressure in the TmSe-TmTe and TmSe-EuSe pseudobinary compounds. The transition is caused by the...
Valence changes and semiconductor-to-metal transitions in Tm1-xEuxSe and TmSe1-xTex (1979)
Batlogg, B., Kaldis, E., Wachter, P.
Alloying TmSe with either EuSe or TmTe results in a Tm valence varying from nearly 3+ to 2+. Optical, transport and magnetic properties show the concomittant metal-to-semiconductor transition....
Valence changes and semiconductor-to-metal transitions in Tm1-xEuxSe and TmSe1-xTex (1979)
Batlogg, B., Kaldis, E., Wachter, P.
Alloying TmSe with either EuSe or TmTe results in a Tm valence varying from nearly 3+ to 2+. Optical, transport and magnetic properties show the concomittant metal-to-semiconductor transition....
Valence changes and semiconductor-to-metal transitions in Tm1-xEuxSe and TmSe1-xTex (1979)
Batlogg, B., Kaldis, E., Wachter, P.
Alloying TmSe with either EuSe or TmTe results in a Tm valence varying from nearly 3+ to 2+. Optical, transport and magnetic properties show the concomittant metal-to-semiconductor transition....
DEGREE OF VALENCE MIXING IN THE METALLIC PHASE OF SmS AND IN TmSe (1976)
Batlogg, B., Schlegel, A., Wachter, P.
We report about the optical reflectivity of TmSe and of the metallic phase of SmS in the photon energy range between 0.03 eV and 12 eV. From the differentially measured lattice constants of both...
DEGREE OF VALENCE MIXING IN THE METALLIC PHASE OF SmS AND IN TmSe (1976)
Batlogg, B., Schlegel, A., Wachter, P.
We report about the optical reflectivity of TmSe and of the metallic phase of SmS in the photon energy range between 0.03 eV and 12 eV. From the differentially measured lattice constants of both...
DEGREE OF VALENCE MIXING IN THE METALLIC PHASE OF SmS AND IN TmSe (1976)
Batlogg, B., Schlegel, A., Wachter, P.
We report about the optical reflectivity of TmSe and of the metallic phase of SmS in the photon energy range between 0.03 eV and 12 eV. From the differentially measured lattice constants of both...