B. Birkmann

Verfahren zur Erhoehung des Umsatzes von Gruppe-III-Metall zu Gruppe-III-Nitrid in einer Gruppe-III-haltigen Metallschmelze (2006)

Friedrich, J., Mueller, G., Meissner, E., Birkmann, B., Hussy, S.

WO2006037311 A UPAB: 20060502 NOVELTY - Method to increase the conversion of group III metals to group III nitrides in a fused metal containing group III elements comprises introducing nitrogen into...

Verfahren zur Herstellung von Gruppe-III-Nitrid-Volumenkristallen oder-Kristallschichten aus Metallschmelzen (2006)

Friedrich, J., Mueller, G., Apelt, R., Meissner, E., Birkmann, B., Hussy, S.

DE1004048454 A UPAB: 20060505 NOVELTY - A process for producing crystal layers or volume crystals out of group 3 nitrides or their mixtures, comprises precipitating from a group 3 metal melt onto a...

Considerations on facetting and on the atomic structure of the phase boundary in low-pressure solution growth of GaN (2006)

Birkmann, B., Hussy, S., Sun, G., Berwian, P., Meissner, E., Friedrich, J., ...

GaN crystals grown from solution and vapor phase show pronounced facetting. In order to explain the occurrence of the facets, Jackson's alpha-factor is determined for the III-nitrides under various...

Morphology and microstructure of a-plane GaN layers grown by MOVPE and by low pressure solution growth (LPSG) (2006)

Hussy, S., Meissner, E., Birkmann, B., Brauer, I., Off, J., Scholz, F., ...

In this paper alpha-plane GaN-layers, grown by two different techniques are compared, mainly focusing on the surface morphology and microstructure of the samples: Layers grown by metal organic vapor...

Morphologies of GaN single crystals grown from Ga solutions under flowing ammonia (2006)

Sun, G., Meissner, E., Hussy, S., Birkmann, B., Friedrich, J., Müller, G.

Gallium nitride (GaN) crystals were synthesized by the reaction between gallium-containing solutions and flowing ammonia at temperatures between 900 and 1050 °C under atmospheric pressure. The...

Characterisation of the electrical properties of solution-grown GaN crystals by reflectivity and Hall measurements (2006)

Birkmann, B., Salcianu, C., Meissner, E., Hussy, S., Friedrich, J., Müller, G.

Characterisation of GaN crystals and epilayers grown from a solution at room pressure (2005)

Meissner, E., Birkmann, B., Hussy, S., Sun, G., Friedrich, J., Müller, G.

Types and origin of dislocations in large GaAs and InP bulk crystals with very low dislocation densities (2005)

Müller, G., Schwesig, P., Birkmann, B., Härtwig, J., Eichler, S.

Investigation of residual dislocations in VGF-grown Si-doped GaAs (2005)

Birkmann, B., Stenzenberger, J., Jurisch, M., Härtwig, J., Alex, V., Müller, G.

Quantitative determination of the doping level distribution in n-type GaAs using absorption mapping (2004)

Wellmann, P.J., Albrecht, A., Künecke, U., Birkmann, B., Müller, G., Jurisch, M.

We present an optical technique based on absorption measurements for the determination of the charge carrier concentration and its lateral distribution in n-type doped GaAs wafers. Calibration plots...

Growth of GaN crystals and epilayers from solutions at ambient pressure (2004)

Meissner, E., Sun, G., Hussy, S., Birkmann, B., Friedrich, J., Müller, G.

Analysis of silicon incorporation into VGF-grown GaAs (2002)

Birkmann, B., Weingärtner, R., Wellmann, P., Wiedemann, B., Müller, G.

Optimization of VGF-growth of GaAs crystals by the aid of numerical modeling (2002)

Müller, G., Birkmann, B.

Growth of 3" and 4" gallium arsenide crystals by the vertical gradient freeze (VGF) method (2000)

Birkmann, B., Rasp, M., Stenzenberger, J., Müller, G.