Hard Carbon Coatings for IR-Optical Components, (9999)
Bubenzer,A., Dischler,B., Koidl,P.
Hydrogenated amorphous carbon films (a-C:H) were deposited on glass, silicon and germanium substrates. The films are transparent in the IR and are extremely hard. The a-C:H films were homogeneously...
Sah, R.E., Ralston, J.D., Eichin, G., Dischler, B., Rothemund, W., Wagner, J., ...
Silicon oxynitride thin films have been deposited at room temperature on GaAs using the PECVD technique with SiH4, N2O and Ar in a modified magnetron sputtering system. Typical deposition rates were...
Intrinsic radiative lifetimes of donor-acceptor pair excitations in diamond (1995)
Schneider, H., Dischler, B., Wild, C., Koidl, P.
The intrinsic decay dynamics of pair excitations involving a deep donor and a shallow acceptor in chemical-vapor-deposited diamond is studied by time-resolved photoluminescence. Appropriate...
Resolved donor-acceptor pair-recombination lines in diamond luminescence (1994)
Dischler, B., Rothemund, W., Wild, C., Locher, R., Biebl, H., Koidl, P.
Cathodoluminescence has been investigated in diamond films, prepared by microwave plasma assisted chemical-vapor deposition. Results are presented for various diamond films differing in crystalline...
Influence of MBE growth process on photovoltaic 3-5 mym intersubband photodetectors. (1994)
Larkins, E.C., Schneider, H., Ehret, S., Fleissner, J., Dischler, B., Koidl, P., ...
The asymmetric photoresponse and dark current of GaAs/AlAs/Al0.3Ga0.7As 3-5 mym intersubband photodetectors is examined both experimentally and through simulations. The intended doping position is...
Diamond luminescence - resolved donor-acceptor pair recombination lines. (1994)
Dischler, B., Rothemund, W., Maier, K., Wild, C., Biebl, H., Koidl, P.
Cathodoluminescence and photoluminescence were analysed in diamond films prepared by microwave plasma assisted chemical vapour desposition. Results are presented for various diamond films differing...
Strain-relaxed, high-speed In0.2Ga0.8As MQW p-i-n photodetectors grown by MBE. (1993)
Larkins, E.C., Bender, G., Schneider, H., Ralston, J.D., Rothemund, W., Dischler, B., ...
We have fabricated p-i-n photodetectors with 10, 15 and 20 well Insub0.2Gasub0.8As/GaAs multiple quantum wells (MQWs) in the intrinsic region, whose bandwidths exceed 23 GHz. Cathodoluminescence (CL)...
Hydrogen in polycrystalline diamond. An infrared analysis. (1993)
Dischler, B., Wild, C., Müller-Sebert, W., Koidl, P.
Hydrogen in polycrystalline diamond (PCD) films has been analysed by infrared spectroscopy. A series of differently prepared PCD films exhibiting considerable differences in the shape of the C-H...
Dischler, B., Fuchs, F., Kheng, K., Koidl, P., Ralston, J.D., Schneider, H.
We have found experimental evidence that the tunneling processes which are crucial to the detection properties of these devices are not only controlled by the thickness of the AlAs tunnel barriers...
Schneider, H., Kheng, K., Fuchs, F., Bittner, P., Dischler, B., Gallagher, D.F.G., ...
Two novel molecular-beam epitaxially grown quantum well device structures for 3-5 and 8-12 Mym photodetection and integrated optics are presented, both of which rely intimately upon the ability of...
Bittner, P., Fleissner, J., Dischler, B., Gallagher, D.F.G., Koidl, P., Ralston, J.D.
Grating coupling and intersubband absorption of accordingly 10-Mym COsub2 laser radiation are demonstrated in GaAs/AlsubxGasub1minusxAs mid- infrared single-mode waveguides grown by molecular beam...
Dischler, B., Fuchs, F., Koidl, P., Ralston, J.D., Schneider, H., Schwarz, K.
We report on a new type of GaAs quantum well intersubband photodetector operating at wavelengths of 3-5 Mym. In these structures, the intersubband spacing is considerably enlarged by using ultrathin...
Dischler, B., Hiesinger, P., Koidl, P., Maier, M., Ralston, J.D., Ramsteiner, M.
Utilizing infrared absorption and Hall measurements, a detailed study is presented of the temperature dependence (10 K smaller than T smaller than 300 K) of the intersubband transition and related...
As, D.J., Brandt, G., Dischler, B., Koidl, P., Maier, M., Ralston, J.D., ...
Continuous tuning over the entire 8-12 mym wavelength range is demonstrated for the intersubband absorption resonance in n-doped GaAs/AlxGa1-xAs multiple quantum-well structures following partial...
Intersubband absorption and infrared photodetection at 3.5 and 4.2 mym in GaAs quantum wells (1991)
Dischler, B., Fuchs, F., Koidl, P., Ralston, J.D., Schneider, H.
Infrared analysis of hydrogen in GaP. (1991)
Dischler, B., Fuchs, F., Seelewind, H.
Local vibrational mode absorption lines from hydrogen in GaP have been observed at 2072.7, 2175.1, 2204.3, 2226.0, 2244.0 and 2245.7 cm high -1. The lines at 2175.1 and 2204.3 agree with previous...
Properties of amorphous hydrogenated carbon films from ArF laser-induced C2H2 photolysis. (1990)
Amorphous hydrogenated carbon films (a-C:H) have been deposited using 193-nm ArF laserinduced photolysis. The source gas was C sub 2H sub 2 (5%), diluted in argon (95%). The substrate temperature was...
The properties of a-C-H films deposited by plasma decomposition of C2H2. (1990)
Zou, J.W., Schmidt, K., Reichelt, K., Dischler, B.
Diamondlike a-C:H films have been deposited by plasma decomposition of C sub 2 H sub 2 . 50 samples were prepared with a systematic variation of the parameters: the substrate bias voltage was between...
The properties of a-C-H films deposited by bias sputtering of carbon. (1990)
Dischler, B., Zou, J.W., Schmidt, K., Reichelt, K.
Carbon films were deposited by rf bias sputtering of a carbon target in argon. Bias voltage and argon pressure were varied systematically. Hardness, internal stress, density, hydrogen content, and...
Photolytic silicon nitride deposition for gallium arsenide by 193 excimer laser radiation (1990)
Rothemund, W., Dischler, B., Eisele, K.M.
GaAs technology requires low temperature processes for any film deposition. Furthermore, processes without particle bombardment are also preferred, two conditions which photolytic deposition does...
Ralston, J.D., Dischler, B., Hiesinger, P., Koidl, P., Maier, M., Ramsteiner, M., ...
Using SIMS profiling temperature-dependent Hall measurements, electronic Raman scattering, and infra-red absorption, a detailed study is presented examining the effects of Si dopant behaviour on...
Plasma deposition, properties and structure of amorphous hydrogenated carbon films. (1989)
Dischler, B., Koidl, P., Ramsteiner, M., Wagner, J., Wild, C.
Plasma deposition and properties of a-C:H are reviewed. The role of process gas, plasma chemistry and plasma surface interaction is discussed. It is shown that the deposition energy of the...
The deposition and study of hard carbon films. (1989)
Zou, J.W., Reichelt, K., Schmidt, K., Dischler, B.
Carbon films have been deposited by rf plasma decomposition of methane at 50-1400V negative bias and 1.3x10 high minus 3 - 1.3x10 high minus 1 mbar pressure. Hardness, internal stress, density,...
Assessment of oxygen in gallium arsenide by infrared local vibrational mode spectroscopy. (1989)
Schneider, J., Mooney, P.M., Lagowski, J., Matsui, M., Beard, D.R., Newman, R.C., ...
Two infrared local vibration mode (LVM) absorption lines occurring at 715 and 845 cm high minus 1 shift to 679 and 802 cm high minus 1 in gallium arsenide doped with high 18 O, proving that the lines...
Photo response of the EL2 absorption band and of the As+Ga ESR signal in GaAs (1988)
The photo response of the EL2 absorption band and of the As+ Ga ESR signal in GaAs is described and compared with the basic optical properties of the EL2 mid-gap level, as inferred from...
A scanning CO2 laser interferometer is described, in which the test sample itself forms the interference cavity. Results for plane parallel plates of germanium and of galliumarsenide are presented...
Using infrared spectroscopy the photoexcitation of free carriers with sub bandgap monochromatic light is investigated. The results are interpreted in terms of photoionization and carrier trapping at...
Photo response of the EL2 absorption band and of the As+Ga ESR signal in GaAs (1988)
The photo response of the EL2 absorption band and of the As+ Ga ESR signal in GaAs is described and compared with the basic optical properties of the EL2 mid-gap level, as inferred from...
Photo response of the EL2 absorption band and of the As+Ga ESR signal in GaAs (1988)
The photo response of the EL2 absorption band and of the As+ Ga ESR signal in GaAs is described and compared with the basic optical properties of the EL2 mid-gap level, as inferred from...
Dischler, B., Koidl, P., Pohl, F.
Bei einer Vorrichtung zur interferometrischen Pruefung der optischen Homogenitaet von transparenten plattenfoermigen Werkstuecken (22) wird die Veraenderung der optischen Schichtdicke durch eine...
Infrared measurements at low temperature on undoped semi-insulating GaAs reveal additional details in the photoresponse of the EL2 center. In the continuous spectral recording of the optical cross...
Plasma deposition of fluoro-hydrogenated amorphous carbon films (1987)
Sah, R.E., Dischler, B., Koidl, P.
Amorphous fluoro-hydrogenated carbon films (a-C:H,F) have been prepared in a 2.3 MHz glow discharge system from fluorinated benzenes, C6FmH(6-m) with 0 smaller than m smaller than 6. In addition,...
The bleaching of the EL2 absorption and its thermal regeneration are typical time-dependent processes. Compared to the conventional time transient analysis, faster and more accurate data acquisition...
Electronic raman scattering of the 78 meV/203 meV double acceptor in GaAs (1987)
Newmann, R.C., Maguire, J., Dischler, B., Seelewind, H., Wagner, J.
Ga-rich p-type GaAs has been studied by electronic Raman scattering (ERS) using sub bandgap excitation. Electronic scattering from both levels of the 78 meV/203 meV double acceptor is observed,...
Bonding and hydrogen incorporation in a-C/H studied by infrared spectroscopy (1987)
Infrared absorption spectroscopy is a powerful tool for the investigation of hydrogen bonding in a-C:H films. Analysis of the C-H stretch bands (near 3000 cm E-1) provides information on the total...
Fink, J., Nuecker, N., Sah, R.E., Koidl, P., Dischler, B.
Workshop ueber amorphe wasserstoffhaltige Kohlenstoffschichten, Physikzentrum,
Vorrichtung zur Pruefung der Homogenitaet der optischen Schichtdicke (1985)
Dischler, B., Koidl, P., Pohl, F.
Bei einer Vorrichtung zur Pruefung der Homogenitaet eines optisch transparenten Werkstoffes wird ein Probekoerper (4) mit zwei im wesentlichen planparallelen Begrenzungsflaechen (3, 12) mit Hilfe...
Bubenzer, A., Koidl, P., Pohl, F., Dischler, B.
Bei einer Vorrichtung zum Auftragen harter Kohlenstoffschichten durch Hochfrequenzplasmaabscheidung wird die das zu beschichtende Substrat (19) tragende Elektrode (5) mit einer Quarzabdeckung (22)...
Optical characterization of plasma deposited hard carbon coatings (1984)
Schirmer, O.F., Brandt, G., Bubenzer, A., Dischler, B., Koidl, P.
Elektronen-Energieverlust-Spektroskopie an a-C:H-Filmen. (1984)
Pflueger, J., Fink, J., Mueller-Heinzerling, T., Dischler, B., Bubenzer, A., Koidl, P.
48.Physikertagung gemeinsam mit der Fruehjahrstagung DPG, Festkoerperphysik, Muenster, 12.-17.Maerz 1984.
Structure and properties of as-deposited and annealed a-C:H thin films. (1984)
Koidl, P., Dischler, B., Bubenzer, A., Klausmann, E., Fink, J.
6th Internat.Conf.on Thin Films, Stockholm, S, August 13-17, 1984
Fink, J., Mueller-Heinzerling, T., Pflueger, J., Scheerer, B., Dischler, B., Koidl, P., ...
Physical Review B, 30(1984) S.4713-18
Dischler, B., Bubenzer, A., Koidl, P., Brandt, G., Fink, J.
Vortr.: 13. IR-Colloquium, Freiburg, 26.-27.April 1983