C. G. Van de Walle

MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes (2008)

Bour, David P., Kneissl, Michael, Hofstetter, Daniel, Romano, Linda T., McCluskey, Matthew D., Van De Walle, C. G., ...

We demonstrate room temperature, pulsed, current-injected operation of InGaAlN heterostructure laser diodes with mirrors fabricated by chemically assisted ion beam etching. The multiple quantum well...

MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes (2008)

Bour, David P., Kneissl, Michael, Hofstetter, Daniel, Romano, Linda T., McCluskey, Matthew D., Van De Walle, C. G., ...

We demonstrate room temperature, pulsed, current-injected operation of InGaAlN heterostructure laser diodes with mirrors fabricated by chemically assisted ion beam etching. The multiple quantum well...

Hydrogen multicentre bonds (2007)

Janotti, A, Van De Walle, C G

The concept of a chemical bond stands out as a major development in the process of understanding how atoms are held together in molecules and solids. Lewis' classical picture of chemical bonds as...

Universal alignment of hydrogen levels in semiconductors and insulators (2006)

Van De Walle, C G

Hydrogen strongly affects the properties of electronic materials. It is always electrically active, and usually counteracts the prevailing conductivity of the semiconductor. In some materials,...

Hydrogen in Semiconductors (2006)

Van De Walle, C. G., Neugebauer, J.

27th International Conference on the Physics of Semiconductors (2005)

Menande, F, Van De Walle, C G

Shallow donor state of hydrogen in indium nitride (2003)

Davis, E A, Cox, S F J, Lichti, R L, Van De Walle, C G

First-principles studies of beryllium doping of GaN (2001)

Van De Walle,C. G., Limpijumnong,S., Neugebauer,Jörg

Passivation and doping due to hydrogen in III-nitrides (2001)

Limpijumnong,S., Van De Walle,C. G., Neugebauer,Jörg

First-principles studies of beryllium doping of GaN (2001)

Van De Walle, C. G., Limpijumnong, S., Neugebauer, Jörg

Passivation and doping due to hydrogen in III-nitrides (2001)

Limpijumnong, S., Van De Walle, C. G., Neugebauer, Jörg

Arsenic impurities in GaN (2000)

Van De Walle,C. G., Neugebauer:,Jörg

Hydrogen as a cause of doping in zinc oxide (2000)

Van De Walle, C. G.

Arsenic impurities in GaN (2000)

Van De Walle, C. G., Neugebauer:, Jörg

Theory of hydrogen in GaN (1999)

Neugebauer,J., Van De Walle,C. G.

Hydrogen and acceptor compensation in GaN (1999)

Van De Walle,C. G., Johnson,N. M., Neugebauer,J.

New insights in doping of III-nitrides and their alloys (1999)

Van De Walle,C. G., Neugebauer,Jörg

Yellow luminescence in GaN (1999)

Van De Walle,C. G., Neugebauer,J.

Native defects, impurities, and doping in GaN and related compounds: general remarks (1999)

Van De Walle,C. G., Neugebauer,J., Stampfl,C.

Native point defects in GaN and related compounds (1999)

Van De Walle,C. G., Neugebauer,Jörg, Stampfl,Catherine

Defects and defect reactions in semiconductor nitrides (1999)

Van De Walle,C. G., Neugebauer,Jörg, Stampfl,Catherine, McCluskey,M. D., Johnson,N. M.

Doping of AlGaN alloys (1999)

Van De Walle,C. G., Stampfl,Catherine, Neugebauer,Jörg, McCluskey,M. D., Johnson,N. M.

Theory of hydrogen in GaN (1999)

Neugebauer, J., Van De Walle, C. G., Nickel, N.

Hydrogen and acceptor compensation in GaN (1999)

Van De Walle, C. G., Johnson, N. M., Neugebauer, J., Edgar, J., Strite, S., Akasaki, I., ...

Yellow luminescence in GaN (1999)

Van De Walle, C. G., Neugebauer, J., Edgar, J., Strite, S., Akasaki, I., Amano, H., ...

Native defects, impurities, and doping in GaN and related compounds: general remarks (1999)

Van De Walle, C. G., Neugebauer, J., Stampfl, C., Edgar, J., Strite, S., Akasaki, I., ...

New insights in doping of III-nitrides and their alloys (1999)

Van De Walle, C. G., Neugebauer, Jörg

Native point defects in GaN and related compounds (1999)

Van De Walle, C. G., Neugebauer, Jörg, Stampfl, Catherine

Defects and defect reactions in semiconductor nitrides (1999)

Van De Walle, C. G., Neugebauer, Jörg, Stampfl, Catherine, McCluskey, M. D., Johnson, N. M.

Doping of AlGaN alloys (1999)

Van De Walle, C. G., Stampfl, Catherine, Neugebauer, Jörg, McCluskey, M. D., Johnson, N. M.

Theory of doping and defects in III-V nitrides (1998)

Van De Walle,C. G., Stampfl,Catherine, Neugebauer,Jörg

Surface structures, surfactants and diffusion at cubic and wurtzite GaN (1998)

Zywietz,Tosja K., Neugebauer,Jörg, Scheffler,Matthias, Northrup,J. E., Van De Walle,C. G.

Theory of doping and defects in III-V nitrides (1998)

Van De Walle, C. G., Stampfl, Catherine, Neugebauer, Jörg

Surface structures, surfactants and diffusion at cubic and wurtzite GaN (1998)

Zywietz, Tosja K., Neugebauer, Jörg, Scheffler, Matthias, Northrup, J. E., Van De Walle, C. G.

Defects and doping in III-V nitrides (1997)

Van De Walle,C. G., Neugebauer,J.

Small valence-band offsets at GaN/InGaN heterojunctions (1997)

Van De Walle,C. G., Neugebauer,Jörg

Theory of point defects and interfaces (1997)

Van De Walle,C. G., Neugebauer,J.

Defects and doping in III-V nitrides (1997)

Van De Walle, C. G., Neugebauer, J., Davies, G., Nazaré, M. H.

Small valence-band offsets at GaN/InGaN heterojunctions (1997)

Van De Walle, C. G., Neugebauer, Jörg

Theory of point defects and interfaces (1997)

Van De Walle, C. G., Neugebauer, J., Ponce, F. A., Moustakas, T. D., Akasaki, I., Monemar, B. A.

Role of defects and impurities in doping of GaN (1996)

Neugebauer, J., Van De Walle, C. G.

We have calculated formation energies and position of the defect levels for all native defects and for a variety of donor and acceptor impurities employing first-principles total-energy calculations....

Role of defects and impurities in doping of GaN (1996)

Neugebauer,J., Van De Walle,C. G.

Role of defects and impurities in doping of GaN (1996)

Neugebauer, J., Van De Walle, C. G., Scheffler, M., Zimmermann, R.

Fully ab initio supercell corrections for charged defects

Freysoldt, Christoph, Neugebauer, Jörg, Van De Walle, C. G.

Fully ab initio supercell corrections for charged defects

Freysoldt, Christoph, Neugebauer, Jörg, Van De Walle, C. G.