D. Bräunig

Details der Publikationsliste

Zeitraum

1989 - 1991

Anzahl

4

Co-Autoren

The Effects of Radiation on Electronic Devices and Circuits (1990)

Benemann, A., Boden, A., Bräunig, D., Brumbi, D., Klein, J. W., ...

Radiation damage of semiconductor components constitutes a safety risk for the functioning of circuits when operated in a radiation-exposed environment. Despite the manifold dependences of the...

The intrinsic states and fixed charges of the Si-SiO2 interface. (1989)

Klausmann, E., Fahrner, W.R., Bräunig, D.

The four types of charges currently encountered in the Si-SiO sub 2 structure are first re-defined and the presently recommanded terminology and symbolism given. The interface states can exchange...

The electronic states of the Si-SiO2 interface. (1989)

Klausmann, E., Fahrner, W.R., Bräunig, D.

The presence of carrier traps, at the Si-SiO2 interface, is at the origin of various instability phenomena encountered both in bipolor and FET devices, and described at length in Chaps. 14 and 15...