Complementary metrology within a European joint laboratory (2009)
Nutsch, A., Beckhoff, B., Altmann, R., Giubertoni, D., Hoenicke, P., ...
Sharp, J A, Smith, A J, Webb, R P, Kirkby, K J, Cowern, N E, Giubertoni, D, ...
The effects of surface proximity and B concentration on end-of-range defect formation during nonmelt laser annealing in preamorphized silicon have been studied. These effects were analyzed by...
Differential Hall characterisation of ultrashallow doping in advanced Si-based materials (2008)
Bennett, NS, Cowern, NEB, Smith, AJ, Kah, M, Gwilliam, RM, Sealy, BJ, ...
Hamilton, J J, Kirkby, K J, Cowern, N E, Collart, E J, Bersani, M, Giubertoni, D, ...
Preamorphization of ultrashallow implanted boron in silicon on insulator is optimized to produce an abrupt boxlike doping profile with negligible electrical deactivation and significantly reduced...
Ferri, M, Solmi, S, Giubertoni, D, Bersani, M, Hamilton, J J, Kah, M, ...
Redistribution during annealing of low-energy boron (B) implants in silicon on insulator (SOI) structures and in bulk Si has been investigated by comparing secondary ion mass spectrometry (SIMS) and...
Sharp, J A, Cowern, N E, Webb, R P, Kirkby, K J, Giubertoni, D, Gennaro, S, ...
Electrical activation and redistribution of 500 eV boron implants in preamorphized silicon after nonmelt laser annealing at 1150 degrees C and isochronal rapid thermal postannealing are reported....
Vacancy-Engineering Implants for High Boron Activation in Silicon on Insulator (2006)
Smith, A J, Cowern, N E, Gwilliam, R, Sealy, B J, Colombeau, B, Collart, E J, ...
The formation of boron interstitial clusters is a key limiting factor for the fabrication of highly conductive ultrashallow doped regions in future silicon-based device technology. Optimized vacancy...
Hamilton, J J, Cowern, N E, Sharp, J A, Kirkby, K J, Collart, E J, Colombeau, B, ...
The fabrication of preamorphized p-type ultrashallow junctions in silicon-on-insulator (SOI) has been investigated. Electrical and structural measurements after annealing show that boron deactivation...
Giubertoni, D, Bersani, A, Barozzi, M, Perderzoli, S, Iacob, E, Van Den Berg, JA, ...
SIMS and medium energy ion scattering (MEIS) have been applied to the characterization of ultra shallow distribution of arsenic in silicon obtained by ion implantation at 1 and 3 keV and successive...
Interphase exchange coupling in Fe/Sm–Co bilayers with gradient Fe thickness (2005)
Yu, Ming-hui, Hattrick-Simpers, Jason, Takeuchi, Ichiro, Li, Jing, Wang, Z. L. (Zhong Lin), Liu, J. Ping, ...
©2005 American Institute of Physics. The electronic version of this article is the complete one and can be found online at: http://link.aip.org/link/?JAPIAU/98/063908/1
Shallow BF2 implants in Xe-bombardment-preamorphized Si: The interaction between Xe and F (2005)
Werner, M, Van Den Berg, JA, Armour, DG, Carter, G, Feudel, T, Herden, M, ...
Si(100) samples, preamorphized to a depth of ~30 nm using 20 keV Xe ions to a nominal fluence of 2×1014 cm2 were implanted with 1 and 3 keV BF2 ions to fluences of 7×1014 cm2. Following...
Werner, M, Van Den Berg, JA, Armour, DG, Carter, G, Feudel, T, Herden, M, ...
The pre-amorphisation of Si by Xe+ ions, before source/drain and extension implants, is an attractive alternative to Ge+ or Si+, as it produces sharper amorphous/crystalline interfaces. Si (1 0 0)...
Indium in silicon: A study on diffusion and electrical activation (2003)
Scalese, S., La Magna, A., Mannino, G., Privitera, V., Bersani, M., Giubertoni, D., ...
In this work we investigate the diffusion and the electrical activation of In atoms implanted in silicon with different energies, in the range 80-360 keV, after rapid thermal processing. Our...
Diffusion and electrical activation of indium in silicon (2003)
Scalese, S., Italia, M., La Magna, A., Mannino, G., Privitera, V., Bersani, M., ...
In this work we investigate the diffusion and the electrical activation of In at oms implanted into silicon with energies ranging from 40 to 360 keV and doses of 5310 12 and 5310 13 In/cm 2 during...