Scientific Commons: D. Lübbert

The method called 'rocking-curve imaging' (RCI) has recently been developed to visualize lattice imperfections in large crystals such as semiconductor wafers with high spatial resolution. The method...

Local wing tilt analysis of laterally overgrown GaN by x-ray rocking curve imaging (2005)

Lübbert, D., Baumbach, T., Mikulik, P., Pernot, P., Helfen, L., Köhler, R., ...

We report on recent advances in spatially resolved x-ray diffraction, extending the technique known as rocking curve imaging down to 1-2 mu m spatial resolution. Application to a set of gallium...

Characterization of epitacially laterally overgrown GaN structures by micrometer-resolved X-ray rocking curve imaging. (2005)

Lübbert, D., Baumbach, T., Mikulik, P., Pernot, P., Helfen, L., Keller, S., ...

Physik seit Albert Einstein : 69.Jahrestagung der DPG, Berlin, 4.-9.März 2005

Local wing tilt analysis of laterally overgrown GaN by x-ray rocking curve imaging. (2005)

Lübbert, D., Baumbach, T., Mikulik, P., Pernot, P., Helfen, L., Köhler, R., ...

Journal of Physics D, 38(2005) S.A50-A54

Progress in scattering and imaging at ANKA. (2005)

Buth, G., Doyle, S., Eichhorn, K., Lübbert, D., Helfen, L.

ANKA - Annual Report 2005 S.156-57

Dislocation strain field in ultrathin bonded silicon wafers studied by grazing incidence x-ray diffraction (2002)

Eymery, J., Buttard, D., Fournel, F., Moriceau, H., Baumbach, G.T., Lübbert, D.

An ultrathin silicon layer (16 nm) bonded onto a silicon wafer is studied by grazing incidence x-ray diffraction. We measure satellite peaks around the {220} reflections coming from two periodic...

Strain and temperature distribution in broad-area high-power laser diodes under operation determined by high resolution x-ray diffraction and topography (2001)

Zeimer, U., Grenzer, J., Baumbach, T., Lübbert, D., Mazuelas, A., Erbert, G.

Broad-area lasers were investigated by high resolution x-ray diffraction (HRXRD) and topography, before and during laser operation. Rocking curves were taken at different positions of the 150 µm...

High resolution quality inspection for microelectronics and packaging by X-ray scattering and imaging techniques using synchrotron radiation (2000)

Baumbach, T., Hönig, V., Helfen, L., Lübbert, D.

Holographische Tomographie und mikrometeraufgelöste Diffraktometrie: Innovative ZfP mit Synchrotronstrahlung (2000)

Baumbach, T., Lübbert, D., Helfen, L., Ludwig, W., Baruchel, J.

Strain and Shape Analysis of Multilayer Surface Gratings by Coplanar and by Grazing-Incidence X-Ray Diffraction (2000)

Baumbach, T., Lübbert, D., Gailhanou, M.

The surface shape and the spatial distribution of strain in GaInAs/InP multilayer gratings is experimentally determined by combining high-resolution x-ray diffraction and grazing-incidence...

Strain-driven transition from stepped interfaces to regularly spaced macrosteps in (GaIn)As/Ga(PAs) symmetrically strained superlattices (2000)

Giannini, C., Baumbach, T., Lübbert, D., Felici, R., Tapfer, L., Marschner, T., ...

We investigate the morphological transition from a steplike interface modulation to a highly periodic lateral thickness modulation that occurs on symmetrically strained (GaIn)As/GaAs/(PAs)/GaAs...

Strain Relaxation in Surface Nano-Structures Studied by X-Ray Diffraction Methods (2000)

Baumbach, T., Lübbert, D., Gailhanou, M.

We study the lattice strain relaxation in pseudomorphic surface gratings using high resolution X-ray diffraction and elasticity theory. Symmetrical and asymmetrical X-ray diffraction gives evidence...

Mu-m-resolved high resolution x-ray diffraction imaging for semiconductor quality control (2000)

Lübbert, D., Baumbach, T., Härtwig, J., Boller, E., Pernot, E.

Grazing incidence x-ray studies of twist-bonded Si/Si and Si/SiO2 interfaces (2000)

Buttard, D., Eymery, J., Rieutord, F., Fournel, F., Lübbert, D., Baumbach, T., ...

Strain-driven transition from stepped interfaces to regularly spaced macrosteps in (GaIn)As/Ga(PAs) symmetrically strained superlattices (2000)

Giannini, C., Baumbach, T., Lübbert, D., Felici, R., Tapfer, L., Marschner, T., ...

Strain relaxation in periodic arrays of Si/SiGe quantum wires determined by coplanar high-resolution X-Ray diffraction and grazing incidence diffraction (1999)

Zhuang, Y., Lübbert, D., Pietsch, U., Darowski, N., Bauer, G.

Elastic relaxation in dry-etched periodic wires fabricated from molecular beam epitaxy grown Si/SiGe multilayers was studied by coplanar and grazing incidence (GID) high-resolution x-ray diffraction....

Elastic Stress Relaxation in GaInAsP Quantum Wires on InP (1999)

Baumbach, T., Lübbert, D., Mazuelas, A., Paris, G., Jenichen, B., Kojima, T., ...

High resolution x-ray diffractometry and photoluminescence measurements (PL) have been used to compare the effects of elastic stress relaxaton of free standing and overgrown Ga0.22In0.78As0.80P0.20...

Strain Relaxation in Surface Nano-Structures Studied by X-Ray Diffraction Methods (1999)

Baumbach, T., Lübbert, D., Gailhanou, M.

We study the lattice strain relaxation in pseudomorphic surface gratings using high resolution X-ray diffraction (XRD), grazing incidence diffraction and elasticicty theory. Ba means of grazing...

Lateral Arrangement of Self-Assembled Quantum dots in an SiGe/Si Superlattice (1999)

Bauer, G., Darowski, N., Holy, V., Lübbert, D., Pietsch, U., Zerlauth, S., ...

Lateral ordering of self-organized quantum dots in a SiGe/Si (001) multilayer has been investigated by grazing incidence x-ray diffraction and Monte Carlo growth simulation. It has been demonstrated...

In Situ Characterization of Strain Distribution in Broad-Area High-Power Lasers under Operation by High-Resolution X-Ray Diffraction and Topography Using Synchrotron Radiation (1999)

Zeimer, U., Baumbach, T., Grenzer, J., Lübbert, D., Pietsch, U., Mazuelas, A., ...

The strain distribution in broad-area high-power semiconductor laser diodes is investigated both before and during operation and degradation by high-resolution x-ray diffraction using synchrotron...

X-Ray Structure Investigation of Lateral Surface Nanostructures - A Full Quantitative analysis of Non-Uniform Lattice Strain (1999)

Baumbach, T., Lübbert, D., Gailhanou, M.

Single and multilayer surface gratings of the system GaInAs/InP are studied by x-ray diffraction reciprocal space mapping. From the diffraction data we determine the gratting period and shape, the...

Strain investigation of low strained buried gratings by grazing incidence X-Ray diffraction and elasticity theory (1999)

Lübbert, D., Baumbach, T., Ponti, S., Pietsch, U., Leprince, L., Schneck, J., ...

We investigate the strain evolution in low strained gratings befor and after embedding in the substrate material by high-resolution grazing incidence X-ray diffraction and elasticity theory. for the...

Investigation of Strain Induced Patterning in Superlattices by Grazing incidence Diffraction - Comparison of Morphological and Strain Ordering (1999)

Baumbach, G., Giannini, C., Lübbert, D., Felici, R., Tapfer, L., Marschner, T., ...

Symmetrically strained superlattices on off-oriented substrates are studied by x-ray grazing incidence diffraction in oder to investigate compositional ordering separately from the related lattice...

Grazing Incidence Diffraction by Laterally Patterned Semiconductor Nanostructures (1999)

Baumbach, T., Lübbert, D.

A theoretical study of grazing incidence diffraction by laterally patterned epitaxial nanostructures is presented and successfully applied to experimental findings of pseudomorphic multilayer...

Strain-induced patterning in superlattices. Comparison of morphological ordering and strain ordering (1998)

Baumbach, T., Giannini, C., Lübbert, D., Felici, R., Tapfer, L., Marschner, T., ...

Residual strain in buried and non-buried semiconductor nanostructures (1998)

Lübbert, D., Baumbach, T., Leprince, L., Schneck, J., Talneau, A., Felici, R.

Grazing incidence diffraction by epitaxial multilayered gratings (1998)

Baumbach, T., Lübbert, D., Pietsch, U., Darowski, N., Leprince, L., Talneau, A., ...

Structural characterisation of (GaAs) surface wire structure by triple axis (X-ray) grazing incidence diffraction (1998)

Darowski, N., Paschke, K., Pietsch, U., Wang, K., Baumbach, G., Forchel, A., ...

In-plane strain and strain relaxation in laterally patterned periodic arrays of protect (Si/SiGe) quantum wires and dot arrays (1998)

Darowski, N., Pietsch, U., Zhuang, Y., Zerlauth, S., Bauer, G., Lübbert, D., ...

The depth dependent strain relaxion in photolithographically defined and reactive ion etched Si/SiGe quantum wire and dot arrays is determined by high resolution grazing incidence x-ray diffraction....

D. Lübbert

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