Bour, David P., Kneissl, Michael, Hofstetter, Daniel, Romano, Linda T., McCluskey, Matthew D., Van De Walle, C. G., ...
We demonstrate room temperature, pulsed, current-injected operation of InGaAlN heterostructure laser diodes with mirrors fabricated by chemically assisted ion beam etching. The multiple quantum well...
Bour, David P., Kneissl, Michael, Hofstetter, Daniel, Romano, Linda T., McCluskey, Matthew D., Van De Walle, C. G., ...
We demonstrate room temperature, pulsed, current-injected operation of InGaAlN heterostructure laser diodes with mirrors fabricated by chemically assisted ion beam etching. The multiple quantum well...
Kneissl, Michael, Hofstetter, Daniel, Bour, David P., Donaldson, Rose M., Walker, J., Johnson, N. M.
Vertical mirrors have been fabricated with chemically assisted ion beam etching (CAIBE) on OMVPE grown InGaN/AlGaN laser diode structures. AFM measurements show that smooth vertical sidewalls are...
Kneissl, Michael, Hofstetter, Daniel, Bour, David P., Donaldson, Rose M., Walker, J., Johnson, N. M.
Vertical mirrors have been fabricated with chemically assisted ion beam etching (CAIBE) on OMVPE grown InGaN/AlGaN laser diode structures. AFM measurements show that smooth vertical sidewalls are...
Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers (2008)
Hofstetter, Daniel, Thornton, Robert L., Romano, Linda T., Bour, David P., Kneissl, Michael, Donaldson, Rose M., ...
We present a device fabrication technology and measurement results of both optically pumped and electrically injected InGaN/GaN-based distributed feedback (DFB) lasers operated at room temperature....
Disordering of InGaN/GaN Superlattices After High-Pressure Annealing (2008)
McCluskey, Matthew D., Romano, Linda T., Krusor, B. S., Hofstetter, Daniel, Bour, David P., Kneissl, Michael, ...
Interdiffusion of In and Ga is observed in InGaN multiple-quantum-well superlattices for annealing temperatures of 1250 to 1400°C. Hydrostatic pressures of up to 15 kbar were applied during the...
Disordering of InGaN/GaN Superlattices After High-Pressure Annealing (2008)
McCluskey, Matthew D., Romano, Linda T., Krusor, B. S., Hofstetter, Daniel, Bour, David P., Kneissl, Michael, ...
Interdiffusion of In and Ga is observed in InGaN multiple-quantum-well superlattices for annealing temperatures of 1250 to 1400°C. Hydrostatic pressures of up to 15 kbar were applied during the...
Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers (2008)
Hofstetter, Daniel, Thornton, Robert L., Romano, Linda T., Bour, David P., Kneissl, Michael, Donaldson, Rose M., ...
We present a device fabrication technology and measurement results of both optically pumped and electrically injected InGaN/GaN-based distributed feedback (DFB) lasers operated at room temperature....
Hofstetter, Daniel, Romano, Linda T., Paoli, Thomas L., Bour, David P., Kneissl, Michael
We demonstrate an optically pumped complex-coupled InGaN/GaN-based multiple-quantum-well distributed-feedback laser in the violet/blue spectral region. The third-order grating providing feedback was...
Hofstetter, Daniel, Romano, Linda T., Paoli, Thomas L., Bour, David P., Kneissl, Michael
We demonstrate an optically pumped complex-coupled InGaN/GaN-based multiple-quantum-well distributed-feedback laser in the violet/blue spectral region. The third-order grating providing feedback was...
Midinfrared emission from InGaN/GaN-based light-emitting diodes (2008)
Hofstetter, Daniel, Faist, Jérôme, Bour, David P.
Midinfrared emission on violet, blue, and green InGaN light-emitting diodes has been measured between 85 and 300 K for various injection current densities. We found that the diode with the highest In...
Midinfrared emission from InGaN/GaN-based light-emitting diodes (2008)
Hofstetter, Daniel, Faist, Jérôme, Bour, David P.
Midinfrared emission on violet, blue, and green InGaN light-emitting diodes has been measured between 85 and 300 K for various injection current densities. We found that the diode with the highest In...
Hofstetter, Daniel, Bour, David P., Thornton, Robert L., Johnson, N. M.
We report a comparison between measured and calculated far field data for an optically pumped In0.15Ga0.85N/In0.05Ga0.95N multiquantum well laser structure with AlGaN cladding layers. Optical pumping...
Hofstetter, Daniel, Thornton, Robert L., Kneissl, Michael, Bour, David P., Dunnrowicz, Clarence
We demonstrate an optically pumped InGaN/GaN-based multiquantum well distributed feedback laser in the blue spectral region. The third-order grating providing feedback was defined holographically and...
Hofstetter, Daniel, Thornton, Robert L., Romano, Linda T., Bour, David P., Kneissl, Michael, Donaldson, Rose M.
We demonstrate room-temperature pulsed operation of an electrically injected InGaN/GaN-based distributed feedback laser with an emission wavelength of 403 nm. The threshold current of a 1000-µm-long...
Hofstetter, Daniel, Bour, David P., Thornton, Robert L., Johnson, N. M.
We report a comparison between measured and calculated far field data for an optically pumped In0.15Ga0.85N/In0.05Ga0.95N multiquantum well laser structure with AlGaN cladding layers. Optical pumping...
Hofstetter, Daniel, Thornton, Robert L., Kneissl, Michael, Bour, David P., Dunnrowicz, Clarence
We demonstrate an optically pumped InGaN/GaN-based multiquantum well distributed feedback laser in the blue spectral region. The third-order grating providing feedback was defined holographically and...
Hofstetter, Daniel, Thornton, Robert L., Romano, Linda T., Bour, David P., Kneissl, Michael, Donaldson, Rose M.
We demonstrate room-temperature pulsed operation of an electrically injected InGaN/GaN-based distributed feedback laser with an emission wavelength of 403 nm. The threshold current of a 1000-µm-long...
Romano, Linda T., Hofstetter, Daniel, McCluskey, Matthew D., Bour, David P., Kneissl, Michael
Laser-diode heterostructures of InGaAlN containing a third-order diffraction grating for distributed optical feedback have been examined with transmission electron microscopy (TEM) and scanning...
Romano, Linda T., Hofstetter, Daniel, McCluskey, Matthew D., Bour, David P., Kneissl, Michael
Laser-diode heterostructures of InGaAlN containing a third-order diffraction grating for distributed optical feedback have been examined with transmission electron microscopy (TEM) and scanning...
Low-Voltage Surface-Normal InGaAsP/InP Modulator for Optical Interconnects (2008)
Noah C. Helman, Jonathan E. Roth, Hatice Altug, David P. Bour
Abstract — We present a quasi-waveguide angled facet electroabsorption modulator with a contrast ratio greater than 3 dB between 1496 nm and 1506 nm for 1 V drive as well as a misalignment...
Misalignment-tolerant surface-normal low-voltage modulator for optical interconnects (2005)
Noah C. Helman, Student Member, Jonathan E. Roth, David P. Bour, Hatice Altug, Student Member, ...
Abstract—We present a surface-normal modulator architecture for optical interconnects that offers misalignment tolerance as well as high contrast ratio over a wide wavelength range for a small...
Tansu, Nelson, Chang, Ying-Lan, Takeuchi, Tetsuya, Bour, David P., Corzine, Scott W., Tan, Michael R.T., ...
This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying...