Demmer, A., Donst, K., Vielhaber, K., Bobzin, K., Ernst, F., Schlegel, A.
Das zentralle Ziel des Vorhabens ist die Entwicklung der Laserstrahllöttechnologie für das stoffschlüssige Fügen von Bauteilkomponenten aus Titan oder Titanlegierungen. Damit wird erstmalig das...
Improving the reproducibility and the comparability of bond strength values (2008)
Kopp, C.A., Bobzin, K., Ernst, F., Richardt, K., Schläfer, T.
One of the most popular test methods for the evaluation of thermally sprayed coatings and substrate pre-treatment is the bond strength test in accordance to the standard EN 582 (in Europe) or ASTM...
Bobzin, K., Ernst, F., Zwick, J., Richardt, K., Schmitt, R., Doeren, J.
After having established an offline process control based on the optical process diagnostic system PFI (Particle Flux Imaging) the process robustness has been increased by experimental identification...
Schwenk, A., Wank, A., Bobzin, K., Ernst, F., Schmitt, R., Dören, J., ...
Der Prozess des thermischen Beschichtens ist für die spätere Produktqualität enorm wichtig. Die Prüfung auf Fehler der Schichten kann oftmals nur mit Hilfe einer zerstörenden Materialprüfung...
Laserstrahllöten von Titan-Feinblechen (2006)
Bobzin, K., Ernst, F., Rojas, Y., Rösing, J., Klocke, F., Donst, D., ...
Erste Erkenntnisse zum Laserstrahllöten von Titan-Feinblechen.
Diagnostics at Thermal Coating Processes - Research Results of the DFG-Founded Project (2003)
Bach, Fr.-W., Henne, R., Landes, K., Lugscheider, E., Copitzky, T., Prehm, J., ...
Laterally ordered Ge/Si islands: a new concept for faster field effect transistors (2002)
Schmidt,O. G., Denker,M., Dashiell,M., Jin-Phillipp,N. Y., Eberl,K., Schreiner,R., ...
Resonant Tunneling Diodes Based on Stacked Self-Assembled Ge/Si Islands (2002)
Schmidt, O. G., Denker, U., Kienzle, O., Ernst, F., Haug, R. J.
We present a new concept and first results of resonant tunneling diodes based on self assembled Ge/Si islands. The proposed structure consists of closely stacked and vertically aligned Ge islands...
Composition of self-assembled Ge/Si islands in single and multiple layers (2002)
Schmidt, O. G., Denker, U., Christiansen, S., Ernst, F.
The degree of Si alloying in vertically aligned self-assembled Ge islands increases with the number of stacked layers. We find that the Si-Ge interdiffusion coefficient increases by more than two...
Laterally aligned Ge/Si islands: a new concept for faster field-effect transistors (2002)
Schmidt, O. G., Denker, U., Dashiell, M. W., Jin-Phillipp, N. Y., Eberl, K., Schreiner, R., ...
Self-assembled and coherently strained Ge dots were grown on a Si/SiGe superlattice, which was deposited on a flat Si(001) substrate surface patterned with a regular array of straight trenches. The...
Laterally ordered Ge/Si islands: a new concept for faster field effect transistors (2002)
Schmidt, O. G., Denker, M., Dashiell, M., Jin-Phillipp, N. Y., Eberl, K., Schreiner, R., ...
An Evolutionary and Optimised Approach on 3D-TV (2002)
C. Fehn, P. Kauff, F. Ernst, W. IJsselsteijn, M. Pollefeys, ...
In this paper we will present the concept of a system that allows for an evolutionary introduction of depth perception into the existing 2D digital TV framework. The work is part of the European...
Atomistic and electronic structure of Al/MgAl2O4 and Ag/MgAl2O4 interfaces (2001)
Schweinfest,R., Köstlmeier,S., Ernst,F., Elsässer,C., Wagner,T., Finnis,M. W.
Atomistic and electronic structure of Al/MgAl2O4 and Ag/MgAl2O4 interfaces (2001)
Schweinfest,R., Köstlmeier,S., Ernst,F., Elsässer,C., Wagner,T., Finnis,M. W.
Ge-Si nanostructures for quantum-effect electronic devices (2001)
Ernst,F., Kienzle,O., Schmidt,O. G., Eberl,K., Zhu,J., Brunner,K., ...
Atomistic and electronic structure of Al/MgAl2O4 and Ag/MgAl2O4 interfaces (2001)
Schweinfest, R., Köstlmeier, S., Ernst, F., Elsässer, C., Wagner, T., Finnis, M. W.
Self-ordering of Ge islands on Si substrates mediated by local strain fields (2001)
Brunner, K., Zhu, J., Abstreiter, G., Kienzle, O., Ernst, F.
Ge-Si nanostructures for quantum-effect electronic devices (2001)
Ernst, F., Kienzle, O., Schmidt, O. G., Eberl, K., Zhu, J., Brunner, K., ...
Atomistic and electronic structure of Al/MgAl2O4 and Ag/MgAl2O4 interfaces (2001)
Schweinfest, R., Köstlmeier, S., Ernst, F., Elsässer, C., Wagner, T., Finnis, M. W.
Resonant tunneling diodes made up of stacked self-assembled Ge/Si islands (2000)
Schmidt,O. G., Denker,U., Eberl,K., Kienzle,O., Ernst,F., Haug,R. J.
Carbon nanotubes as nanoreactors for boriding iron nanowires (2000)
Han,W. Q., Kohler-Redlich,P., Scheu,C., Ernst,F., Rühle,M., Grobert,N., ...
Aligned N-doped nanotubes by pyrolysis of ferrocene/C60 under NH3 atomosphere (2000)
Han,W. Q., Redlich,P., Seeger,T., Ernst,F., Rühle,M., Grobert,N., ...
Self-organized periodic arrays of SiGe wires and Ge islands on vicinal Si substrates (2000)
Brunner,K., Zhu,J., Miesner,C., Abstreiter,G., Kienzle,O., Ernst,F.
Carbon nanotubes as nanoreactors for boriding iron nanowires (2000)
Han, W. Q., Kohler-Redlich, P., Scheu, C., Ernst, F., Rühle, M., Grobert, N., ...
Aligned N-doped nanotubes by pyrolysis of ferrocene/C60 under NH3 atomosphere (2000)
Han, W. Q., Redlich, P., Seeger, T., Ernst, F., Rühle, M., Grobert, N., ...
Effect of overgrowth temperature on the photoluminescence of Ge/Si islands (2000)
Schmidt, O. G., Denker, U., Eberl, K., Kienzle, O., Ernst, F.
Resonant tunnelling diodes made up of stacked self-assembled Ge/Si islands (2000)
Schmidt, O. G., Denker, U., Eberl, K., Kienzle, O., Ernst, F.
Resonant tunneling diodes made up of stacked self-assembled Ge/Si islands (2000)
Schmidt, O. G., Denker, U., Eberl, K., Kienzle, O., Ernst, F., Haug, R. J.
Step bunching an correlated SiGe nanostructures on Si(113) (2000)
Brunner, K., Zhu, J., Abstreiter, G., Kienzle, O., Ernst, F.
Self-organized periodic arrays of SiGe wires and Ge islands on vicinal Si substrates (2000)
Brunner, K., Zhu, J., Miesner, C., Abstreiter, G., Kienzle, O., Ernst, F.
Effect of overgrowth temperature on the photoluminescence of Ge/Si islands (2000)
Schmidt, O. G., Denker, U., Eberl, K., Kienzle, O., Ernst, F.
Transmission Electron Microscopy of Composites. (1998)
Pirouz, P., Farmer, S. C., Ernst, F., Chung, J.
By definition a composite contains more than one phase and thus, necessarily, has interfaces separating the different phases. the interface may be a sharp region separating two phases in the...
High Resolution Transmission Electron Microscopy Studies of the Ag/MgO Interface. (1998)
Trampert, A., Ernst, F., Flynn, C. P., Fischmeister, H. F., Ruehle, M.
Ag layers with a thickness of 100 nm were deposited on ?100! mgo substrates by molecular beam epitaxy (mbe). the substrates were produced by cleaving mgo single crystals and subsequent annealing in...
Structures of Nb/Al2O3 Interfaces Produced by Different Experimental Routes. (1998)
Mayer, J., Mader, W., Knauss, D., Ernst, F., Ruehle, M.
Nb/Al2O3 interfaces were produced by (i) diffusion bonding of single crystalline Nb and Al2O3 at 1973 K, (ii) internal oxidation of a Nb-3 at% Al alloy at 1773 K, and (iii) molecular beam epitaxy...
Influence of pre-grown carbon on the formation of germanium dots. (1998)
Schmidt, O. G., Lange, A., Eberl, K., Kienzle, O., Ernst, F.
C-induced Ge dots: a versatile tool to fabricate ultra-small Ge nanostructures. (1998)
Schmidt, O. G., Lange, C., Eberl, K., Kienzle, O., Ernst, F.
Defect distribution in compositionally graded epitaxial SiGe layers on Si substrates. (1998)
Cullis, A. G., Hutchison, J. L., Lyutovich, K., Ernst, F., Banhart, F., Silier, I., ...
Stracke, S, Ernst, F, Jehle, D, Grunewald, R, Haller, H, Keller, F, ...
Formation of carbon-induced germanium dots. (1997)
Schmidt, O. G., Lange, A., Eberl, K., Kienzle, O., Ernst, F.
Theoretical prediction and direct observation of the 9R structure in Ag (1992)
Ernst,F., Finnis,M. W., Hofmann,D., Muschik,T., Schönberger,U., Wolf,U., ...
Theoretical prediction and direct observation of the 9R structure in Ag (1992)
Ernst, F., Finnis, M. W., Hofmann, D., Muschik, T., Schönberger, U., Wolf, U., ...
Weronek, K., Weber, J., Höpner, A., Ernst, F., Stefaniak, M., Alexander, H., ...
The D-band recombination in silicon is found to be independent of impurities trapped at dislocations. Deliberate contamination of high purity silicon samples, containing dislocations, with copper or...
Vandermies, A., Lieppe, S., Grenier, P., Bourguignon, A. M., Ernst, F.
In a study of the possible interaction between mecillinam and ceftazidime against Gram-negative bacilli, ten volunteers received on separate days: ceftazidime 20 mg/kg iv in 15 min, mecillinam 10...
〈100〉- and 〈111〉-oriented copper single crystals were tensile deformed to a final strain of 20% and 4%, respectively. Specimens prepared from these crystals were abraded at one end. During...
In-vitro activity of two new carbapenems FCE 22101 and CGP 31608 in comparison with imipenem (1987)
Auwera, P. Van Der, Ernst, F., Grenier, P., Glupczynski, Y., Husson, M., Klastersky, J.
The mimimum inhibitory concentrations (MICs) of two new penems, CGP 31608 and FCE 22101 were evaluated against 993 aerobic Gram-positive and Gram-negative bacteria and compared with imipenem. FCE...
Thomas May's Tragedy of Julia Agrippina Empresse of Rome. (1910)
Ersch. vollst. in: Materialien z. Kunde d. ält. Engl. Dramas.