F. Niebelschütz

InN nanocolumns (2010)

Grandal, J., Sánchez-García, M.A., Calleja, E., Lazic, S., Gallardo, E., Calleja, J.M., ...

Performance modification of SiC MEMS (2009)

Niebelschütz, F., Brueckner, K., Cimalla, V., Hein, M.A., Pezoldt, J.

The adjustment of the properties of 3C-SiC based MEMS devices, i.e. the quality factor and resonant frequency, was achieved by changing the residual stress and the 3C-SiC material quality of the...

Composition and interface chemistry dependence in ohmic contacts to GaN HEMT structures on the Ti/Al ratio and annealing conditions (2009)

Kolaklieva, L., Kakanakov, R., Stefanov, P., Cimalla, V., Maroldt, S., Ambacher, O., ...

Electrical, thermal and chemical properties of Ti/Al/Ti/Au ohmic contacts with different former Ti-Al ratio are investigated for application in GaN HEMTs. Lowest resistivity of 4.22x10(exp -5)...

Resonant piezoelectric ALGAN/GAN mems sensors in longitudinal mode operation (2009)

Brueckner, K., Niebelschütz, F., Tonisch, K., Stephan, R., Cimalla, V., Ambacher, O., ...

Free-standing piezoelectric AlGaN/GaN beam resonators have been prepared on silicon substrates using a semiconductor fabrication process. To realize the back electrode for the piezoelectric active...

Transport properties of InN: Elektronische Transporteigenschaften von InN (2009)

Cimalla, V., Lebedev, V., Ambacher, O., Polyakov, V.M., Schwierz, F., Niebelschütz, F., ...

Electric field distribution in GaN/AlGaN/GaN heterostructures with two-dimensional electron and hole gas (2008)

Buchheim, C., Goldhahn, R., Gobsch, G., Tonisch, K., Cimalla, V., Niebelschütz, F., ...

Ga-face GaN/AlGaN/GaN heterostructures with different cap thicknesses are investigated by electroreflectance spectroscopy (ER). The voltage dependent electric field strengths of the barrier and cap...

Piezoelectric actuation of (GaN/)AlGaN/GaN heterostructures (2008)

Tonisch, K., Buchheim, C., Niebelschütz, F., Schober, A., Gobsch, G., Cimalla, V., ...

A detailed analysis of the piezoelectric response of (GaN/)AlGaN/GaN heterostructures is reported. The electromechanical properties of two types of heterostructures with an Al content of 31% are...

Two-dimensional electron gas based actuation of piezoelectric AlGaN/GaN microelectromechanical resonators (2008)

Brueckner, K., Niebelschütz, F., Tonisch, K., Michael, S., Dadgar, A., Krost, A., ...

Free-standing piezoelectric AlGaN/GaN beam resonators have been prepared on silicon substrates. The two-dimensional electron gas at the interface of the III/V heterostructure has been employed to act...

Isotropic dry-etching of SiC for AlGaN/GaN MEMS fabrication (2008)

Niebelschütz, F., Pezoldt, J., Stauden, T., Cimalla, V., Tonisch, K., Brueckner, K., ...

Nanomechanics with nanowires and nano-electro-mechanical systems

Cimalla, V., Brückner, K., Hassel, A. W., Hein, M. A., Niebelschütz, F., Niebelschütz, M., ...