G. Burri

Self-Interstitial Mechanism for Zn Diffusion-Induced Disordering of Gaas/Alxga1-Xas (X=0.1-1) Multiple-Quantum-Well Structures (1993)

Ky, N. H., Ganiere, J. D., Gailhanou, M., Blanchard, B., Pavesi, L., Burri, G., ...

GaAs/AlxGa1-xAs multiple-quantum-well (MQW) structures with identical well thicknesses but with different Al contents x in the barrier (x almost-equal-to 0.1, 0.2, 0.45, and 1) were grown by...

Zinc diffusion in GaAs and zinc-induced disordering of GaAs/AlGaAs multiple quantum wells : a multitechnique study (1991)

Pavesi, L, Araujo, D, Nguyen, HK, Ganière, JD, Reinhart, FK, Buffat, PA, ...

Microstructure and electrical properties of pure 110 K phase in the BiPbSrCaCuO system (1991)

Holguin, E, Berger, H, Levy, F, Dwir, B, Pavuna, D, Burri, G

The temperature dependence of the DC resistivity and AC magnetic susceptibility was investigated in bulk ceramics of the BiPbSrCaCuO system with 2212-free (2223) phase. The temperature domain needed...

Zinc Diffusion in Gaas and Zinc-Induced Disordering of Gaas Algaas Multiple Quantum-Wells - a Multitechnique Study (1991)

Pavesi, L., Araujo, D., Nguyen, H. K. Y., Ganiere, J. D., Reinhart, F. K., Buffat, P. A., ...

A review of experimental results obtained by different techniques is presented on the problem of zinc diffusion. Zinc diffusion was carried out on Si-doped GaAs (n almost-equal-to 10(18) cm-3) and on...

Destruction de l'état mixte à deux dimensions dans des couches cylindriques minces supraconductrices de type I (1989)

Holguin, E., Dutoit, B., Burri, G., Schöpfer, R., Rinderer, L.