Kraus, M. M., Regnet, M. M., Becker, C. R., Bicknell-Tassius, R. N., Landwehr, G.
We have grown HgTe/CdTe superlattices by molecular beam epitaxy; barri- er thicknesses were in the range from 15 to 91 A and the well thickness was maintained at a constant value of 30 A. The...
He, L., Becker, C. R., Bicknell-Tassius, R. N., Scholl, S., Landwehr, G.
The structural and electrical properties of (100) Hg(1-x)Cd(x)Te epilayers grown by molecular beam epitaxy have been systematically investigated for different Hg/Te flux ratios. The hillock density,...
Quantum Interference Effects in Highly Doped n-ZnSe Epitaxy Layers Grown by MBE (2007)
H. Shao, J. Gerschütz, S. Scholl, H. Schäfer, B. Jobst, D. Hommel, ...
this paper, we present magnetotransport investigations of quantum interference effects for temperatures down to 0.35 K in a series of highly doped MBE-grown n-ZnSe epitaxy layers with variation of k...
Band structure of semimagnetic Hg1-yMnyTe quantum wells (2004)
Novik, E. G., Pfeuffer-Jeschke, A., Jungwirth, T., Latussek, V., Becker, C. R., Landwehr, G., ...
The band structure of semimagnetic Hg_1-yMn_yTe/Hg_1-xCd_xTe type-III quantum wells has been calculated using eight-band kp model in an envelope function approach. Details of the band structure...
Worschech, L., Ossau, W., Landwehr, G.
Pres: 6th Int Symp Nanostructures: Physics and Technology, St Petersburg, Russia. 22-26 Jun 1998. p394. This article is from ADA406591 Nanostructures: Physics and Technology International Symposium...
Optical Method for Determination of Carrier Density in Modulation Doped Quantum Wells (2001)
Astakhov, G. V., Kochereshko, V. P., Yakovlev, D. R., Ossau, W., Nurnberger, J., Faschinger, W., ...
An optical method is suggested to determine the concentration of two-dimensional electrons in modulation-doped quantum wells at low and moderate electron densities between 10^{9} and 2x10^{11}...
Astakhov, G. V., Kosobukin, V. A., Kochereshko, V. P., Yakovlev, D. R., Ossau, W., Landwehr, G., ...
An approach is proposed to determine parameters of homogeneous and inhomogeneous broadening for reflection lines of quasi-two-dimensional excitons in semiconductor quantum well structures. A...
II-VI quantum structures with tunable electron g-factor (2000)
Wojtowicz, T., Kutrowski, M., Karczewski, G., Kossut, J., Konig, B., Keller, A., ...
Cyclotron masses of asymmetrically doped HgTe quantum wells. (1998)
Pfeuffer-Jeschke, A., Goschenhofer, F., Cheng, S. J., Latussek, V., Gerschütz, J., Becker, C. R., ...
Combined exciton-cyclotron resonance in quantum well structures (1997)
Maan, J.C., Christianen, P.C.M., Landwehr, G., Waag, A., Ossau, W., Schenk, H., ...
The growth of HgSe by molecular beam epitaxy for ohmic contacts to p-ZnSe (1994)
Einfeldt, S., Heinke, H., Behringer, M., Becker, Charles R., Kurtz, E., Hommel, D., ...
Epitaxial overgrowth of II-VI compounds on patterned substrates (1994)
Schikora, D., Hausleitner, H., Einfeldt, S., Becker, Charles R., Widmer, T., Giftige, C., ...
Optical study of interdiffusion in CdTe and ZnSe based quantum wells (1994)
Tönnies, D., Bacher, G., Forchel, Alfred, Waag, A., Litz, Th., Hommel, D., ...
Removal of oxygen and reduction of carbon contamination on (100) Cd_0.96Zn_0.04Te (1993)
Wu, Y. S., Becker, Charles R., Waag, A., Bicknell-Tassius, R. N., Landwehr, G.
Growth of MgTe and Cd_1-xMgxTe thin films by molecular beam epitaxy (1993)
Waag, A., Heinke, H., Scholl, S., Becker, Charles R., Landwehr, G.
We report on the growth of the compound semiconductor MgTe as weil as the ternary alloy Cd l ~xMg,Tc by molecular hcam cpitaxy. This is to our knowkdgc thc first time that this material has heen...
Herrmann, K. H., Happ, M., Tomm, J. W., Becker, Charles R., Kraus, M. M., ...
A semiempirical model is presented that correlates the broadening of the absorption ~ge with both transitions below the energy gap and with transitions by the Kane band model. This model correctly...
Oxygen on the (100) CdTe surface (1993)
Wu, Y. S., Becker, Charles R., Waag, A., Schmiedl, R., Einfeldt, S., Landwehr, G.
We have investigated oxygen on CdTe substrates by means of x-ray photoelectron spectroscopy (XPS) and reflection high-energy electron diffraction (RHEED). A Te oxide layer that was at least 15 A...
The growth and structure of short period (001) HgTe-Hg_1-xCdxTe superlattices (1993)
Becker, Charles R., He, L., Regnet, M. M., Kraus, M.M., Wu, Y. S., Landwehr, G., ...
Molecular beam epitaxially grown short period (001) HgI_xCdxTe-HgTe superlattices have been systematically investigated. Several narrow well widths were chosen, e.g., 30, 35 and 40 A, and the barrier...
Qiu, Yueming, He, Li, Li, Jie, Yuan, Shixin, Becker, Charles R., Landwehr, G.
An infrared photoconductor fabricated with a HgTe/CdTe superlattice grown on a GaAs substrate by molecular beam epitaxy is described here for the first time. The growth procedure, device fabrication,...
Surface sublimation of zinc blende CdTe (1993)
Wu, Y. S., Becker, Charles R., Waag, A., Von Schierstedt, K., Bicknell-Tassius, R. N., Landwehr, G.
The surface sublimation of Cd and Te atoms from the zinc blende (111)A CdTe surface has been investigated in detail by reflection high energy electron diffraction and x-ray photoelectron...
Molecular beam epitaxial growth of (100) Hg_0.8Cd_0.2Te on Cd_0.96Zn_0.04Te (1993)
He, L., Becker, Charles R., Bicknell-Tassius, R. N., Scholl, S., Landwehr, G.
Infrared photoluminescence on molecular beam epitaxially grown Hg_1-xCdxTe layers (1993)
Kraus, M. M., Becker, Charles R., Scholl, S., Wu, Y. S., Yuan, S., Landwehr, G.
Kraus, M. M., Regnet, M. M., Becker, Charles R., Bicknell-Tassius, R. N., Landwehr, G.
We have grown HgTe/CdTe superlattices by molecular beam epitaxy; barrier thicknesses were in the range from 15 to 91 A and the well thickness was maintained at a constant value of 30 A. The infrared...
High magnetic field transport in II-VI heterostructures (1992)
Bicknell-Tassius, R. N., Scholl, S., Becker, Charles R., Landwehr, G.
In the present work we report the results of magneto-transport measurements on some Hg-based li-VI semiconductor epitaxiallayers grown by molecular beam epitaxy. The transport measurement were...
Wu, Y. S., Becker, Charles R., Waag, A., Bicknell-Tassius, R. N., Landwehr, G.
The influence of different CdZnTe substrate treatments prior to II-VI molecular beam epitaxial growth on surface stoichiometry, oxygen, and carbon contamination has been studied using x-ray...
Wu, Y. S., Becker, Charles R., Waag, A., Bicknell-Tassius, R. N., Landwehr, G.
We report the results of a detailed investigation on the Te-stabilized (2 x 1) and the Cdstabilized c( 2 X 2) surfaces of ( 100) CdTe substrates. The investigation demonstrates for the first time...
Correlation of the Cd-to-Te ratio on CdTe surfaces with the surface structure (1991)
Wu, Y.S., Becker, Charles R., Waag, A., Kraus, M. M., Bicknell-Tassius, R. N., Landwehr, G.
We report here that reconstruction on (100), (1lIlA, and (1l1lB CdTe surfaces is either C(2X2), (2X2), and (l X I) or (2X I), (l X I), and (l X I) when they are Cd or Te stabilized, respectively....
High-field magnetospectroscopy on p-type GaAs/GaAlAs heterojunctions (1986)
Erhardt, W, Staghuhn, W, Byszewski, P, Vonortenberg, M, Landwehr, G, Weimann, G, ...
ENERGY LOSS OF WARM ELECTRONS AT THE INTERFACE OF (100) SILICON MOSFETs (1981)
The electrons in inversion layers of (100) silicon MOSFETs were heated at helium temperatures with source drain fields of the order 1 V/cm. The electron temperature as derived from the amplitudes of...
INFLUENCE OF STRONG MAGNETIC FIELDS ON FERROELECTRIC PHASE TRANSITIONS (1981)
Brunel, L., Landwehr, G., Bussmann-Holder, A., Bilz, H., Balkanski, M., Massot, M., ...
The ferroelectric soft mode in SbSI has been investigated by Raman scattering in strong magnetic fields up to 14 Tesla. The mode frequency shifts towards lower frequencies for a magnetic field...
ENERGY LOSS OF WARM ELECTRONS AT THE INTERFACE OF (100) SILICON MOSFETs (1981)
The electrons in inversion layers of (100) silicon MOSFETs were heated at helium temperatures with source drain fields of the order 1 V/cm. The electron temperature as derived from the amplitudes of...
INFLUENCE OF STRONG MAGNETIC FIELDS ON FERROELECTRIC PHASE TRANSITIONS (1981)
Brunel, L., Landwehr, G., Bussmann-Holder, A., Bilz, H., Balkanski, M., Massot, M., ...
The ferroelectric soft mode in SbSI has been investigated by Raman scattering in strong magnetic fields up to 14 Tesla. The mode frequency shifts towards lower frequencies for a magnetic field...
ENERGY LOSS OF WARM ELECTRONS AT THE INTERFACE OF (100) SILICON MOSFETs (1981)
The electrons in inversion layers of (100) silicon MOSFETs were heated at helium temperatures with source drain fields of the order 1 V/cm. The electron temperature as derived from the amplitudes of...
INFLUENCE OF STRONG MAGNETIC FIELDS ON FERROELECTRIC PHASE TRANSITIONS (1981)
Brunel, L., Landwehr, G., Bussmann-Holder, A., Bilz, H., Balkanski, M., Massot, M., ...
The ferroelectric soft mode in SbSI has been investigated by Raman scattering in strong magnetic fields up to 14 Tesla. The mode frequency shifts towards lower frequencies for a magnetic field...