Zippelius, B., Krieger, M., Weber, H.B., Pensl, G., Kallinger, B., Friedrich, J., ...
4H-SiC epilayers are homoepitaxially grown on 4H-Sic substrates with different C/Si-ratios and different growth rates by the chemical vapour deposition method. DLTS investigations are applied in...
Beljakowa, S., Pensl, G., Rommel, M.
P-doped FZ-silicon is intentionally contaminated with gallium (Ga) and manganese (Mn) by ion implantation. The implanted samples are annealed at elevated temperature and the electrical parameters of...
Reshanov, S. A., Pensl, G., Danno, K., Kimoto, T., Hishiki, S., Ohshima, T., ...
The effect of the Schottky barrier height on the detection of the concentration of midgap defects using deep level transient spectroscopy (DLTS) is experimentally and theoretically studied for EH6...
SiC/SiO2 Interface States: Properties and Models (2005)
Afanas'ev, V.V., Ciobanu, F., Dimitrijev, Sima, Pensl, G., Stesmans, A.
Yes
SiC/SiO2 Interface States: Properties and Models (2005)
Afanas'ev, V.V., Ciobanu, F., Dimitrijev, Sima, Pensl, G., Stesmans, A.
Yes
SiC/SiO2 Interface States: Properties and Models (2005)
Afanas'ev, V.V., Ciobanu, F., Dimitrijev, Sima, Pensl, G., Stesmans, A.
SiC/SiO2 interface states: Properties and models (2005)
Ciobanu, F, Dimitrijev, S, Pensl, G
Properties of defects encountered at the oxidized surfaces of silicon carbide (SiC) suggest their origin to be different from the dangling-bond-type defects commonly observed in the oxidized silicon....
SiC/SiO2 Interface States: Properties and Models (2005)
Afanas'ev, V.V., Ciobanu, F., Dimitrijev, Sima, Pensl, G., Stesmans, A.
Band alignment and defect states at SiC/oxide interfaces (2004)
Ciobanu, F, Dimitrijev, S, Pensl, G
Comparative analysis of the electronic structure of thermally oxidized surfaces of silicon and silicon carbide indicates that in both cases the fundamental (bulkband-related) spectrum of electron...
Band Alignment and Defect States at SiC/oxide interfaces (2004)
Afanas'ev, V V, Ciobanu, F, Dimitrijev, Sima, Pensl, G, Stesmans, A, A M Stoneham
Comparative analysis of the electronic structure of thermally oxidized surfaces of silicon and silicon carbide indicates that in both cases the fundamental (bulk-band-related) spectrum of electron...
Electronic properties of SiON/HfO2 insulating stacks on 4H-SiC (0001) (2004)
Afanas'ev, V.V., Campbell, S.A., Cheong, Kuan Yew, Ciobanu, F., Dimitrijev, Sima, Pensl, G., ...
Yes
A P-Channel MOSFET on 4H-SiC (2004)
Han, Jisheng, Cheong, Kuan Yew, Dimitrijev, Sima, Laube, M., Pensl, G.
Yes
Band Alignment and Defect States at SiC/oxide interfaces (2004)
Afanas'ev, V V, Ciobanu, F, Dimitrijev, Sima, Pensl, G, Stesmans, A
Comparative analysis of the electronic structure of thermally oxidized surfaces of silicon and silicon carbide indicates that in both cases the fundamental (bulk-band-related) spectrum of electron...
Electronic properties of SiON/HfO2 insulating stacks on 4H-SiC (0001) (2004)
Afanas'ev, V.V., Campbell, S.A., Cheong, Kuan Yew, Ciobanu, F., Dimitrijev, Sima, Pensl, G., ...
Yes
A P-Channel MOSFET on 4H-SiC (2004)
Han, Jisheng, Cheong, Kuan Yew, Dimitrijev, Sima, Laube, M., Pensl, G.
Yes
Band Alignment and Defect States at SiC/oxide interfaces (2004)
Afanas'ev, V V, Ciobanu, F, Dimitrijev, Sima, Pensl, G, Stesmans, A
Comparative analysis of the electronic structure of thermally oxidized surfaces of silicon and silicon carbide indicates that in both cases the fundamental (bulk-band-related) spectrum of electron...
Electronic properties of SiON/HfO2 insulating stacks on 4H-SiC (0001) (2004)
Afanas'ev, V.V., Campbell, S.A., Cheong, Kuan Yew, Ciobanu, F., Dimitrijev, Sima, Pensl, G., ...
A P-Channel MOSFET on 4H-SiC (2004)
Han, Jisheng, Cheong, Kuan Yew, Dimitrijev, Sima, Laube, M., Pensl, G.
Low sheet resistance of high-dose aluminum implanted 4H-SiC using (11-20) face (2004)
Negoro, Y, Katsumoto, K, Kimoto, T, Matsunami, H, Schmid, F, Pensl, G
Electronic properties of SiON/HfO2 insulating stacks on 4H-SiC (0001) (2004)
Campbell, SA, Cheong, KY, Ciobanu, F, Dimitrijev, S, Pensl, G, ...
The application of an insulating stack composed of a few-nm thick thermally grown oxynitride and a thicker (15-20 nm) deposited high-permittivity metal oxide (HfO2, epsilon approximate to20)...
Band Alignment and Defect States at SiC/oxide interfaces (2004)
Afanas'ev, V V, Ciobanu, F, Dimitrijev, Sima, Pensl, G, Stesmans, A
Comparative analysis of the electronic structure of thermally oxidized surfaces of silicon and silicon carbide indicates that in both cases the fundamental (bulk-band-related) spectrum of electron...
Electronic properties of SiON/HfO2 insulating stacks on 4H-SiC (0001) (2004)
Afanas'ev, V.V., Campbell, S.A., Cheong, Kuan Yew, Ciobanu, F., Dimitrijev, Sima, Pensl, G., ...
A P-Channel MOSFET on 4H-SiC (2004)
Han, Jisheng, Cheong, Kuan Yew, Dimitrijev, Sima, Laube, M., Pensl, G.
4H-SiC based P-channel MOSFET with nitrided gate oxide have been fabricated and analysed. The threshold voltage and the peak channel-carrier mobility, obtained from the transfer characteristic in the...
Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation (2003)
Ciobanu, F, Pensl, G, Cheong, KY, Dimitrijev, S
An analysis of fast and slow traps at the interface of 4H-SiC with oxides grown in O-2, N2O, and NO reveals that the dominant positive effect of nitridation is due to a significant reduction of the...
Growth of phosphorus-doped 6H-SiC single crystals by the modified Lely method (2003)
Semmelroth, K., Schmid, F., Karg, D., Pensl, G., Maier, M., Greulich-Weber, S., ...
A solid phosphorus source is used to dope 6H-SiC single crystals with phosphorus donors during the sublimation growth. Several characterization techniques are applied to detect the incorporated...
Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation (2003)
Afanas'ev, V. V., Stesmans, A., Ciobanu, F., Pensl, G., Cheong, Kuan Yew, Dimitrijev, Sima
Yes
Traps at the Interface of 3C-SiC/SiO2-MOS-Structures (2003)
Ciobanu, F., Pensl, G., Nagasawa, H., Schoner, A., Dimitrijev, Sima, Cheong, Kuan Yew, ...
Yes
Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation (2003)
Afanas'ev, V. V., Stesmans, A., Ciobanu, F., Pensl, G., Cheong, Kuan Yew, Dimitrijev, Sima
Yes
Traps at the Interface of 3C-SiC/SiO2-MOS-Structures (2003)
Ciobanu, F., Pensl, G., Nagasawa, H., Schoner, A., Dimitrijev, Sima, Cheong, Kuan Yew, ...
Yes
Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation (2003)
Afanas'ev, V. V., Stesmans, A., Ciobanu, F., Pensl, G., Cheong, Kuan Yew, Dimitrijev, Sima
Traps at the Interface of 3C-SiC/SiO2-MOS-Structures (2003)
Ciobanu, F., Pensl, G., Nagasawa, H., Schoner, A., Dimitrijev, Sima, Cheong, Kuan Yew, ...
Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation (2003)
Afanas'ev, V. V., Stesmans, A., Ciobanu, F., Pensl, G., Cheong, Kuan Yew, Dimitrijev, Sima
Traps at the Interface of 3C-SiC/SiO2-MOS-Structures (2003)
Ciobanu, F., Pensl, G., Nagasawa, H., Schoner, A., Dimitrijev, Sima, Cheong, Kuan Yew, ...
Proton trapping in SiO2 layers thermally grown on Si and SiC (2002)
Ciobanu, F, Pensl, G, Stesmans, Andre; U0014266
Positive charging of thermal SiO2 layers on (1 0 0)Si and (0 0 0 1)6H-, 4H-SiC related to trapping of protons is studied using low-energy proton implantation into the oxide, and compared to the...
Electronic States in Silicon and on Its Interfaces. (2002)
Schulz,M., Hofmann,K., Pensl,G., Hoelzlein,K. H.
The report contains two separate sections: (1)Properties of the new oxygen donor' in silicon and (2)Process-induced interface and bulk states in MOS structures. (1): The so-called new oxygen donor...
Electrical activation of implanted phosphorus ions in [0001]- and [11-20]-oriented 4H-SiC (2002)
Schmid, F., Laube, M., Pensl, G., Wagner, G., Maier, M.
Aluminium-doped 4H-SiC epilayers with [0001]- or [11-20]-oriented faces were implanted with phosphorus and subsequently annealed in a temperature range of 1550-1700 °C. The electrical activation of...
Electrical activation of implanted phosphorus ions in (0001)/(1120)-oriented 4H-SiC (2002)
Schmid, F., Laube, M., Pensl, G., Wagner, G., Maier, M.
Two phosphorus (P) box-profiles (P1: [P]=2x10 (exp 18) cm-3, P2: [P]=2.4x10 (exp 20) cm-3) are generated by multiple implantation into (0001)- or (11 2 0)-oriented 4H-SiC epilayers. Hall effect...
Electrical activation of high concentrations of N+ and P+ ions implanted into 4H-SiC (2002)
Laube, M., Schmid, F., Pensl, G., Wagner, G., Linnarsson, M., Maier, M.
Comparative Hall effect investigations are conducted on N- and P-implanted as well as on (N+P)-coimplanted 4H-SiC epilayers. Box profiles with three different mean concentrations ranging from 2.5x10...
Oxidation of silicon carbide: Problems and solutions (2002)
Electron transport near oxidized SiC surfaces appears to be significantly deteriorated by interface defects. In contrast to oxidized Si, the SiC/oxide interface imperfections expose a remarkable...
Afanas'eva, VV, Stesmans, Andre; U0014266, Bassler, M, Pensl, G, Schulz, MJ
Katholieke Universiteit Leuven, Faculteit Wetenschappen, Departement Natuurkunde en Sterrenkunde, Celestijnenlaan 200D, 3001 Leuven
Shmagin, V.B., Andreev, B.A., Antonov, A.V., Krasil'nik, Z.F., Kuznetsov, V.P., Kuznetsov, O.A., ...
Shmagin, V.B., Andreev, B.A., Morozova, E.N., Krasil'nik, Z.F., Kryzhkov, D.I., Kuznetsov, V.P., ...
Isotope-Disorder-Induced Line Broadening of Phonons in the Raman Spectra of SiC (2001)
Hundhausen, M., Ley, L., Pensl, G., Rohmfeld, S., Schulze, N.
Shallow electron traps at the 4H-SiC/SiO2 interface (2000)
Stesmans, Andre; U0014266, Bassler, M, Pensl, G, Schulz, MJ
Low-temperature electrical measurements and photon-stimulated electron tunneling experiments reveal the presence of a high density of interface states at around 0.1 eV below the conduction band of...
SiC/SiO2 interface-state generation by electron injection (1999)
Stesmans, Andre; U0014266, Bassler, M, Pensl, G, Schulz, MJ, Harris, CI
Generation of interface states caused by electron injection in n- and p-type (3C, 4H, 6H)-SiC/ SiO2/metal structures was studied using photoinjection methods. The charge trapping in the oxides on SiC...
Silicon Carbide and Related Materials: ECSCRM2000 (1998)
Pensl, G., Stephani, D., Hundhausen, M.
The Third European Conference on Silicon Carbide and Related Materials (ECSCRM2000), held September 3-7, 2000 in Kloster Banz, Germany, developed into a truly important forum in the field of wide...
Doping of SiC by implantation of Boron and Aluminum (1997)
Troffer, T., Schadt, M., Frank, T., Itoh, H., Pensl, G., Heindl, J., ...
Experimental studies on aluminum (Al) and boron (B) implantation in 4H/6H SiC are reported; the implantation is conducted at room temperature or elevated temperatures (500 to 700 degrees C). Both Al...
Elimination of SiC/SiO2 interface states by preoxidation ultraviolet-azone cleaning (1996)
Afanasev, VV, Stesmans, A, Bassler, M, Pensl, G, Schulz, MJ, Harris, CI
The preoxidation cleaning of silicon carbide surfaces (3C, 4H, 6H polytypes) by exposing them to ultraviolet radiation and oxygen is shown to produce a significant improvement in the electronic...
Electrical properties of silicon carbide polytypes (1996)
Pensl, G., Afanasev, V.V., Bassler, M., Schadt, M., Troffer, T., Heindl, J., ...
It is demonstrated that SiC can be doped with boron and aluminum by ion implantation. Based on our Hall effect data, an optimal electrical activity of these dopants is reached at annealing...
The assignment of the 78/203meV double acceptor in GaAs to BAs impurity antisite centres. (1994)
Newman, R.C., Davidson, B.R., Addinall, R., Murray, R., Emmert, J.W., Wagner, J., ...
Ga-rich GaAs shows two levels at (Esubv plus 78 meV) and (Esubv plus 203 meV) due to a He-like double acceptor. The consensus is that the defect responsible is the GasubAs antisite, but IR localized...
Roos, G., Schöner, A., Pensl, G., Meyer, B.K., Newman, R.C., Wagner, J.
The electrical and optical properties of liquid encapsulated Czochralski grown, Ga-rich (melt composed of 55% Ga and 45% As), p-type GaAs were studied by the Hall effect, capacitance-voltage...