G. Spoldi

Experimental observation of FIB induced lateral damage on silicon samples (2009)

Spoldi, G., Beuer, S., Rommel, M., Yanev, V., Bauer, A.J., Ryssel, H.

Scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM) were used to analyze focused ion beam (FIB) induced lateral damage around milled structures on silicon. For...

Electrical AFM techniques for the advanced characterization of materials in semiconductor technology: Poster at NanoScale VI, Berlin, Germany, July 9-11, 2008 (2008)

Yanev, V., Rommel, M., Spoldi, G., Beuer, S., Amon, B., Petersen, S., ...

Experimental observation of FIB induced lateral damage on silicon samples: Poster at 34th International Conference on Micro&Nano Engineering, MNE 2008, Athens (2008)

Spoldi, G., Beuer, S., Rommel, M., Yanev, V., Bauer, A.J., Ryssel, H.

Experimental observation of FIB induced lateral damage on silicon samples: Poster at 34th International Conference on Micro&Nano Engineering, MNE 2008, Athens (2008)

Spoldi, G., Beuer, S., Rommel, M., Yanev, V., Bauer, A.J., Ryssel, H.

Electrical AFM techniques for the advanced characterization of materials in semiconductor technology: Poster at NanoScale VI, Berlin, Germany, July 9-11, 2008 (2008)

Yanev, V., Rommel, M., Spoldi, G., Beuer, S., Amon, B., Petersen, S., ...