Butt-Coupled PIN Photodiode on InP Using Selective Refill MOVPE Growth, (9999)
Umbach, A., Kayser, O., Trommer, D., Unterborsch, G.
The integration of photodetectors with optical waveguides is a key element in the fabrication of optoelectronic integrated circuits (OEICs) for long wavelength communication techniques. For example,...
Unterborsch, G., Kroh, M., Honecker, J., Steffan, A.G., Tsianos, G., ...
A DPSK receiver concept using flipchip hybrid integration of InP photodetectors on SOI boards with optical decoder is presented. Horizontal waveguiding enables low-cost production for high data rates.
Schlaak, W., Mekonnen, G.G., Bornholdt, C., Schramm, C., Umbach, A., ...
A combination of an InP-based monolithically integrated photoreceiver with a spot size converter is presented. A total receiver conversion gain of more than 1A/W, an extended bandwidth of 47 GHz for...
High-speed, high-power 1.55 mu m photodetectors (2001)
Umbach, A., Trommer, D., Steingrüber, R., Seeger, A., Ebert, W., Unterborsch, G.
High-speed, high-power photodetectors are required in 40 Gbit/s front-ends as well as for optic/millimeterwave-conversion in 60 GHz broadband mobile systems. The demand for a high bandwidth...
Schlaak, W., Engel, Th., Umbach, A., Passenberg, W., Steingrüber, R., Seeger, A., ...
Ultrafast 1.55 mu m photoreceivers are key elements for future long-haul communication systems operating at bitrates of 40 Gbit/s, as well as for mobile access systems using 38 GHz or 60 GHz carrier...
40 GHz InP-based photoreceiver OEICs: Application for 40 Gb/s TDM systems and beyond (2000)
Bach, H.G., Schlaak, W., Mekonnen, G.G., Umbach, A., Schramm, C., Unterborsch, G., ...
Progress of 40 Gb/s photoreceiver OEICs for 1.55 mu m TDM systems is described. The OEICs comprise side-illuminated photodiodes and amplifiers, based on the traveling wave concept. Results from...
InP-based pin TWA photoreceivers with low group delay scatter over 40 GHz bandwidth (2000)
Schlaak, W., Mekonnen, G.G., Seeger, A., Steingrüber, R., Schramm, C., ...
Advanced 40 Gb/s photoreceiver OEICs, packaged into thermo-stable modules, were developed for 1.55 micron TDM applications. The OEIC comprises a waveguide-integrated photodiode and a traveling wave...
Umbach, A., Trommer, D., Steingrüber, R., Seeger, A., Ebert, W., Unterborsch, G.
40 Gbit/s photodetectors require high bandwidth at high power levels, as supplied by waveguide-integrated p-i-n diodes on InP. By monolithic integration of a spot size transformer a responsivity of...
Ultrafast, high-power waveguide fed photodetector with integrated spot size converter (2000)
Trommer, D., Schmidt, D., Umbach, A., Steingrüber, R., Ebert, W., Unterborsch, G.
The monolithic integration of an ultrafast photodetector with an spot size transformer is presented. Using a shifting mask technique optimized taper ramp profiles are fabricated. The integrated...
Schramm, C., Mekonnen, G.G., Unterborsch, G., Schlaak, W., Ebert, W., ...
High-speed photoreceivers are important components for future high-bit rate communication systems. The use of a monolithical integration of waveguide, photodiode and amplifier avoids loss-making...
Integrated differential photoreceiver for 40 Gbit/s systems (2000)
Umbach, A., Unterborsch, G., Trommer, D., Schramm, C., Mekonnen, G.G.
The integration of two waveguide integrated photodetectors with an optical 3 dB power splitter, a spot size converter and a quasi-differential output port is demonstrated. This integrated...
High-speed, high-responsivity 1.55 mu m photodetector on InP (2000)
Umbach, A., Trommer, D., Steingrüber, R., Seeger, A., Ebert, W., Unterborsch, G.
40 Gbit/s photodetectors require high bandwidth at high power levels, as supplied by waveguide-integrated p-i-n diodes on InP. Waveguide-integrated photodetectors on InP exhibit a high cutoff...
InP integrated receivers for narrow band radio over fiber systems (1999)
The demand for future broadband mobile access networks with data rates of up to 155 Mbit/s per subscriber will lead to carrier frequencies in the mm-wave range, with favored frequency regimes at 38...
Noise and nonlinearity of monolithic 38 GHz photoreceiver for OPTIC/mm-wave conversion (1999)
Engel, Th., Unterborsch, G., Hubsch, R., Mekonnen, G.G., Bimberg, D.
The dynamic range of a monolithic InP-based photoreceiver (OEIC) for narrow band optical/mm-wave conversion in the 38 GHz range is investigated. Detailed circuit simulations based on a library of...
1.55 mu m balanced mixer receiver OEIC with 15 GHz bandwidth (1999)
Unterborsch, G., Schramm, C., Hubsch, R., Mekonnen, G.G., Seeger, A., Trommer, D., ...
A balanced mixer receiver OEIC based on InP is presented, which comprises a 3 dB coupler and a pair of photodiodes with integrated biasing network. The receiver reveals a cut-off frequency of 15 GHz...
Optoelectronic integration of ultrafast photoreceivers (1999)
Umbach, A., Engel, T., Unterborsch, G.
The requirements on ultrafast photoreceivers are derived from system applications and several integration concepts are presented. Using a waveguide approach, both in the electrical and in the optical...
Unterborsch, G., Engel, T., Rohde, D., Rodhe, M., Bimberg, D., Grosskopf, G.
Hybrid as well as monolithic integrated lambda =1.55 mu m optic/millimeter-wave converters were developed and investigated experimentally based on detailed microwave simulations. Both converters...
Schlaak, W., Unterborsch, G., Mekonnen, G.G., Jacumeit, G., Ziegler, R., ...
40-Gbit/s photoreceiver modules for 1.55- mu m TDM system applications covering RZ and NRZ coding are described. The modules contain an InP-OEIC with a monolithic integration of a...
Umbach, A., Engel, T., Waasen, S. Van, Droge, E., Strittmatter, A., ...
For future long-haul communication systems operating at bitrates of 40 Gbit/s and for broad-band mobile access systems using 38- or 60-GHz carrier frequencies, ultrafast photoreceivers have to be...
37 GHz bandwidth InP-based photoreceiver OEIC suitable for data rates up to 50 Gb/s (1999)
Mekonnen, G.G., Schlaak, W., Steingrüber, R., Seeger, A., Enger, Th., ...
A photoreceiver optoelectronic integrated circuit based on InP with a bandwidth of 37 GHz is presented. The receiver consists of a 50 GHz waveguide-integrated photodiode and a distributed amplifier...
Design, fabrication and characterization of narrow band photoreceiver OEICs based on InP (1998)
Engel, Th., Strittmatter, A., Passenberg, W., Seeger, A., Steingrüber, R., Mekonnen, G.G., ...
We report on our recent results on the monolithic integration of InP-based narrow band photoreceiver OEICs for 1.55 mu m working in the 60 GHz range. These OEICs were achieved by successive...
High-power performance of a high-speed photodetector (1998)
Unterborsch, G., Trommer, D., Umbach, A., Ludwig, R., Bach, H.G.
The high power performance of an ultrafast GaInAs p-i-n photodiode photodetector with integrated optical waveguide and biasing network is demonstrated. Up to about +20 dBm optical peak power the FWHM...
38 GHz narrow band photoreceiver OEIC with MSM photodetector and HEMT amplifier (1998)
Engel, T., Strittmatter, A., Passenberg, W., Droge, E., Umbach, A., Schlaak, W., ...
For the first time a monolithically integrated InP-based photoreceiver (OEIC) for narrow band applications in the 38 GHz range is reported. It consists of a top-illuminated submicron MSM...
50 Gbit/s InP-based photoreceiver OEIC with gain flattened transfer characteristics (1998)
Bach, H.G., Schlaak, W., Mekonnen, G.G., Steingrüber, R., Seeger, A., Engel, T., ...
An InP-based photoreceiver OEIC for >or=40 Gbit/s data rate applications is presented. Besides a waveguide-integrated photodiode it contains a 38 GHz gain flattened distributed amplifier, which is...
Umbach, A., Unterborsch, G., Braun, R.P., Grobkopf, G.
Advanced optical concepts are required to ensure a high quality of the mm-wave carrier. In the control station the optical signals are heterodyned and converted into a mm-wave signal. A high optical...
InGaAs photodetector with integrated biasing network for mm-wave applications (1998)
Trommer, D., Umbach, A., Unterborsch, G.
xi A waveguide integrated photodetector with an integrated biasing network is presented. The external responsivity amounts to 0.3 A/W while the bandwidth is 70 GHz. The integration of a matching...
Narrow-band photoreceiver OEIC on InP operating at 38 GHz (1998)
Engel, T., Strittmatter, A., Passenberg, W., Umbach, A., Schlaak, W., Droge, E., ...
We report on the successful monolithic integration of an InP-based photoreceiver operating in the narrow band around 38 GHz at a wavelength of 1.55 mu m, The optoelectronic integrated circuit (OEIC)...
Bertenburg, R.M., Bulow, H., Jacumeit, G., Mekonnen, G.G., Umbach, A., ...
A monolithic InP-based photoreceiver for lambda =1.55 mu m is presented. Its optoelectronic conversion capabilities for 40 Gbit/s RZ- and NRZ-modulated PRBS data streams are demonstrated.
Waveguide-integrated photodetector for 60 GHz microwave transmission at 1.55 mu m (1998)
Umbach, A., Unterborsch, G., Trommer, D., Mekonnen, G.G.
A waveguide-integrated photodetector with 0.3 A/W responsivity and 70 GHz bandwidth is presented. Millimeter-wave transmission experiments were successfully performed at 64 GHz, demonstrating linear...
Bertenburg, R.M., Bulow, H., Jacumeit, G., Mekonnen, G.G., Umbach, A., ...
A monolithic InP-based photoreceiver module for lambda =1.55 mu m is presented. It detects an RZ modulated PRBS at a bit rate of 40 Gbit/s generated from an optical TDM source under polarization...
70 GHz long-wavelength photodetector (1997)
Unterborsch, G., Umbach, A., Trommer, D., Mekonnen, G.G.
A photodetector for an optical TDM network comprising a GaInAs photoabsorbing layer p-i-n photodiode, an optical waveguide and an electrical biasing network is presented. The detector, operating at...
Umbach, A., Leone, A.M., Unterborsch, G.
p-i-n photodiodes with integrated optical waveguides were successfully fabricated in the GaInAsP/InP material system. This integration leads to optoelectronical integrated circuits of significantly...
20 Gbit/s InP-based photoreceiver module: application in nonrepeatered TDM with 198 km DSF (1996)
Bertenburg, R.M., Bogner, W., Gottwald, E., Jacumeit, G., Mekonnen, G.G., ...
A 20 Gbit/s monolithic InP-based photoreceiver module for lambda =1.55 mu m is reported. It operates successfully with an overall receiver sensitivity of -30.7 dBm (BER=10-9) within an electrical TDM...
Ultrafast GaInAs/AlInAs/InP photoreceiver based on waveguide architecture (1996)
Umbach, A., Unterborsch, G., Passenberg, W., Mekonnen, G.G., Schlaak, W., ...
An InP-based photoreceiver OEIC with a bandwidth of 27 GHz is reported. The device consists of a pin-photodiode with integrated optical waveguide and a coplanar travelling wave amplifier being...
Umbach, A., Passenberg, W., Unterborsch, G., Mekonnen, G.G., Schlaak, W., Schramm, C., ...
Optical front-ends are considered to play a major role in future communication systems operating at bit rates of 20 or even 40 Gbit/s, as well as in mobile communication systems with fibre-optic...
High-bandwidth 1.55 mu m waveguide integrated photodetector (1996)
Unterborsch, G., Trommer, D., Umbach, A., Mekonnen, G.G.
Future high-bit rate optical communication networks operating at bit rates above 40 Gbit/s and, in particular, wireless cellular mobile communication systems based on an optical distribution network...
Umbach, A., Van Waasen, S., Bertenburg, R.M., Unterborsch, G.
An InP-based photoreceiver OEIC for lambda =1.55 mu m with a bandwidth of 27 GHz is reported. The receiver design, fabrication and characterization is presented. The device consists of an optical...
Waveguide integrated 1.55 mu m photodetector with 45 GHz bandwidth (1996)
Umbach, A., Trommer, D., Mekonnen, G.G., Ebert, W., Unterborsch, G.
Evanescently coupled, waveguide integrated photodiodes were fabricated on InP. The device design is intended to provide ultrafast photoresponse together with a high responsivity. A 3 dB bandwidth of...
Monolithic pin-HEMT 1.55 mu m photoreceiver on InP with 27 GHz bandwidth (1996)
Umbach, A., Van Waasen, S., Auer, U., Bertenburg, R.M., Breuer, V., ...
A monolithically integrated photoreceiver is presented. Based on a new integration concept comprising a waveguide integrated photodiode and a travelling wave GaInAs/AlInAs-HEMT amplifier. A record 3...
50 GHz operation of waveguide integrated photodiode at 1.55 mu m (1995)
Umbach, A., Trommer, D., Siefke, A., Unterborsch, G.
The development of high speed optical communication networks operating at bit rates above 40 Gbit/s necessitates the availability of accordingly fast photodetectors for a wavelength of 1.55 mu m....
Submicron InGaAs/InP MSM photodetectors for operation at 1.55 mu m (1995)
Umbach, A., Droge, E., Engel, H., Bottcher, E.H., Unterborsch, G., Steingrüber, R., ...
The implementation of future high-speed optical communication networks operating in the 20-40 Gbit/s regime relies on the availability of correspondingly fast photodetectors for the 1.3-1.55 mu m...
Monolithic integrated high-speed balanced-mixer detector on InP (1995)
Unterborsch, G., Trommer, D., Jacumeit, G., Mekonnen, G.G., Reier, F., Stenzel, R.
Summary form only given. In this paper we present the monolithic integration of an optical 3-dB coupler with a pair of photodiodes. This photonic integrated circuit (PIG) operates as a complete...
Monolithically integrated polarisation-insensitive high-speed balanced mixer receiver on InP (1995)
A monolithically integrated high-speed balanced mixer receiver on InP is presented for the operation at 1.55 mu m wavelength. The detector provides cutoff frequency of 14 GHz and...
Hamacher, M., Trommer, D., Heidrich, H., Albrecht, P., Jacumeit, G., Passenberg, W., ...
For the first time a packaged polarization diversity coherent receiver OEIC including detector units (photodetectors, JFET, load resistor) has been fabricated with the following data: waveguide loss...
Hilbk, U., Hermes, T., Meissner, P., Jacumeit, C., Stentel, R., Unterborsch, G.
System performance of an integrated polarization diversity heterodyne receiver optoelectronic IC (OEIC) is reported. The OEIC is monolithically integrated on InP. It includes a tunable 4 section DBR...
Hilbk, U., Hermes, T., Meissner, P., Jacumeit, G., Stenzel, R., ...
System performance of a pigtailed monolithically integrated tunable heterodyne polarization diversity balanced receiver without extra isolation is reported. No error floor is observed. Stable and...
Monolithically integrated heterodyne receivers based on InP (1994)
Heidrich, H., Fidorra, F., Hamacher, M., Kaiser, R., Li, K., Trommer, D., ...
Future OFDM communication systems demand the availability of high performance and low cost OEICs. The achievement of a completely integrated polarization diversity heterodyne receiver makes the...
Ultrahigh bandwidth balanced mixer receiver OEIC (1994)
Trommer, D., Unterborsch, G., Reier, F.
Coherent optical receivers are very attractive devices for future optical communication systems because of their capability to exploit the broadband potential of optical fibres. Due to the complexity...
Ohmic contacts to buried n-GaInAs layers for GaInAs/AlInAs-HEMTs (1994)
Umbach, A., Schramm, C., Bottcher, J., Unterborsch, G.
The physical properties of the InP-based GaInAs/AlInAs system allow the fabrication of High-Electron-Mobility-Transistors (HEMTs) with superior device performance. However the full exploitation of...
Umbach, A., Unterborsch, G., Passenberg, W., Schramm, C., Kunzel, H.
A novel high gate barrier (HGB) AlInAs/GaInAs/InP HEMT structure is proposed, which overcomes gate leakage current problems due to limited Schottky barrier height in common HEMT design. Gate leakage...
Monolithically integrated polarisation diversity heterodyne receivers on GaInAsP/InP (1994)
Kaiser, R., Trommer, D., Fidorra, F., Heidrich, H., Malchow, S., Franke, D., ...
Polarisation diversity heterodyne receiver OEICs including a tunable four-section DBR laser as a focal oscillator have been successfully fabricated for the first time. OEIC design and fabrication are...
InP based InGaAs-JFET with delta-doped channel (1993)
Mekonnen, G.G., Passenberg, W., Schramm, C., Trommer, D., Unterborsch, G.
An InP based junction field-effect transistor (JFET) employing a double delta-doped InGaAs channel was designed and fabricated. This new combination of delta-doping and InGaAs material properties...
A monolithically integrated balanced mixer OEIC on InP for coherent receiver applications (1993)
Trommer, D., Umbach, A., Passenberg, W., Unterborsch, G.
We report on the fabrication and characterization of a monolithically integrated balanced mixer receiver on InP consisting of a 3-dB coupler, twin balanced waveguide integrated photodiodes, and a...
Monolithic integrated wavelength duplexer-receiver on InP (1993)
Bornholdt, C., Trommer, D., Unterborsch, G., Venghaus, H., Weinert, C.M.
The monolithic integration of a detector stage comprising a photodiode and a field-effect transistor with a load resistor and a wavelength duplexer, realized in the GaInAsP/InP material system, is...
Integrated balanced mixer receiver on InP (1992)
Trommer, D., Bornholdt, C., Stenzel, R., Umbach, A., Unterborsch, G.
The authors present a balanced mixer receiver OEIC (optoelectronic integrated circuit) comprising an optical mixer, a balanced detector, and a low-noise electrical preamplifier stage. A current gain...
Integrated wavelength demultiplexer-receiver on InP (1992)
Bornholdt, C., Trommer, D., Unterborsch, G., Bach, H.G., Kappe, F., Passenberg, W., ...
A detector stage comprising a photodiode, a field-effect transistor, and a load resistor, and a wavelength demultiplexer have been monolithically integrated in the GaInAsP/InP material system. Chips...
RF and noise characterization of a monolithically integrated receiver on InP (1991)
Feiste, U., Kaiser, R., Mekonnen, G.G., Schramm, C., Trommer, D., Unterborsch, G.
A comprehensive characterization of an optoelectronic integrated circuit (OEIC) receiver that uses an optical waveguide is given. Bias dependent signal and noise measurements show that the...
Critical issues in the MBE growth of Ga0.47In0.53As for waveguide/PIN/JFET integration (1991)
Kunzel, H., Kaiser, R., Passenberg, W., Trommer, D., Unterborsch, G.
The critical issues for the optimization of the MBE grown layer sequence for the integration of an optical waveguide, a PIN photodiode and a junction field effect transistor (JFET) to form a...
Fabrication and characterization of a waveguide integrated balanced receiver OEIC on InP (1991)
Trommer, D., Feiste, U., Kaiser, R., Mekonnen, G.G., Passenberg, W., Reier, F., ...
The fabrication and detailed characterization of a waveguide integrated balanced detector OEIC is presented. A 3 dB bandwidth of 600 MHz in low impedance mode and a sensitivity of -27.5 dBm at 1...
Waveguide integrated PINFET on InP for receiver OEICs (1990)
Trommer, D., Feiste, U., Hochheim, S., Kaiser, R., Passenberg, W., Reier, F., ...
The authors present a waveguide integrated PINFET as a building block for future receiver OEICs based on InP. The OEIC consists of a waveguide, a PIN-photodiode, a junction field effect transistor...
Superior microwave performance of InGaAs JFETs grown by MBE (1990)
Trommer, D., Umbach, A., Passenburg, W., Mekonnen, G., Unterborsch, G.
The realisation of high performance InGaAs JFETs designed for InP based optoelectronic integration is reported. An optimised MBE process for the gate layer growth is presented. JFETs fabricated by...
Dielectrics for passivation of planar InP/InGaAs diodes (1987)
Unterborsch, G., Bach, H.G., Schmitt, F., Schmidt, R., Schlaak, W.
Dielectrics were investigated for passivating planar InP or InGaAs photodiodes: thermally evaporated Al2O3 and SiO, sputtered Si3N4 and SiO2 and also SiO2 using chemical vapour deposition. The...