H- and D-related mid-infrared absorption bands in Ga(1-y)In(y)As(1-x)N(x) epitaxial layers (2009)
Alt, H.C., Messerer, P., Köhler, K., Riechert, H.
Epitaxially grown ternary and quaternary layers of GaAs based dilute nitrides have been exposed to H+ and D+ ion bombardment to investigate the interaction between hydrogen (deuterium) and nitrogen....
Güngerich, M., Klar, P.J., Heimbrodt, W., Volz, K., Köhler, K., Wagner, J., ...
We present comprehensive optical studies of a series of as-grown and hydrogenated Ga(0.95)Al(0.05)As(1-x)N(x) epitaxial layers with various amounts x of substitutional nitrogen. Photomodulated and...
Jost, W., Kaufmann, U., Schneider, J., Köhler, K., Alt, H.C., Kunzer, M.
GaAs epitaxial layers grown by molecular beam epitaxy (MBE) at low temperature (LT) have been characterized by electron spin resonance (ESR) infrared absorption, magnetic circular dichroism (MCD) and...
Negative-U, off-center OAs in GaAs and its relation to the EL3 level (1991)
Klausmann, E., Schneider, J., Kaufmann, U., Alt, H.C.
Using comparative local-vibrational-mode and deep-level transient spectroscopy, we have studied the off-center O sub As defect in high-resistivity, undoped GaAs and neutron-transmutation-doped,...