Continuous wave terahertz systems exploiting 1.5 µm telecom technologies (2009)
Sartorius, B., Schlak, M., Stanze, D., Roehle, H., Künzel, H., Schmidt, D., ...
A fiber-assembled CW THz System operating at 1.5 mu m is presented. High speed telecom photodiodes integrated with planar THz antennas serve as THz emitters with power up to 10 mu W. Photoconductive...
1.5 µm wavelength all-fiber terahertz time-domain spectrometer (2008)
Roehle, H., Sartorius, B., Künzel, H., Böttcher, J., Schlak, M., Stanze, D.
The worldwide first all-fiber THz time-domain spectrometer for operation at 1.5 mu m Is presented. Applications up to 3 THz are demonstrated. Key devices are photoconductive antennas based on novel...
Verfahren zum Erzeugen und kohaerenten Detektieren von Terahertzstrahlung (2007)
WO 2009036984 A1 UPAB: 20090423 NOVELTY - The device has a laser light source (1) and a transmission antenna (2) that is activated by the laser light source for creating the terahertz radiation. A...
Möhrle, M., Mörl, L., Sigmund, A., Suna, A., Reier, F., Roehle, H.
1.55 µm strain-compensated multi-quan-tum- well buried heterostructure lasers with InGaAsP quantum wells and InGaAlAs barriers were fabricated, yielding high optical power at low threshold currents....
Vorrichtung und Verfahren zur automatischen Ausrichtung von Messapparaturen zu Punkstrahlern (2004)
Stenzel, R., Stolpe, H., Roehle, H.
DE 10302752 A UPAB: 20040907 NOVELTY - Device for alignment of apparatuses with point emitters has a measurement apparatus (3) with an inlet opening (6) that has at least three measurement receivers...
Stenzel, R., Roehle, H., Stolpe, H.
DE 10110297 A UPAB: 20030407 NOVELTY - A slider (6) is provided on the front surface of the probe holder, and is movable in a straight line parallel to the front wall of the receptacle (4). A spring...
Comparison of MOVPE-based Zn diffusion into InGaAsP/InP using H2 and N2 carrier gas (2000)
Schroeter-Janssen, H., Roehle, H., Franke, D., Bochnia, R., Harde, P., Grote, N.
The indiffusion of Zn into InGaAsP layers was studied using a MOVPE-based diffusion process. Hydrogen and nitrogen were alternatively employed as carrier gas to compare their effect on the diffusion...
LP-MOVPE growth of laser structures using nitrogen carrier gas (1997)
Roehle, H., Schroeter-Janssen, H.
The replacement of the commonly used hydrogen by nitrogen as the carrier gas in MOVPE has been discussed from time to time, mainly with respect to safety considerations, but also to reaction-kinetic...
LP-MOVPE growth of InGaAsP/InP using nitrogen as carrier gas (1996)
Roehle, H., Schroeter-Janssen, H.
Layers of InP and InGaAsP layers of different band gap were grown using nitrogen as carrier gas. Background doping levels are fully comparable with reference layers grown under hydrogen. This...
Roehle, H., Schroeter-Janssen, H., Harde, P., Franke, D.
Fe doping profiles in InP layers grown by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE) were investigated by secondary ion mass spectroscopy. Different pre-treatments of the InP substrates...
Stareev, G., Umbach, A., Fidorra, F., Roehle, H.
A fabrication technique for non-alloyed Au/Pt/Ti ohmic contacts to p-InGaAs (NA=1*1020 cm-3) is discussed. The semiconductor surface is cleaned by Ar+ ions immediately followed by the metal...