Erlbacher, T., Graf, T., DasGupta, N., Bauer, A.J., Ryssel, H.
In this paper the application of thin high-k dielectrics as capping layers on oxide/nitride/oxide memory stacks with respect to suppression of electron injection from the gate electrode during erase...
Erlbacher, T., Graf, T., DasGupta, N., Bauer, A.J., Ryssel, H.
In this paper the application of thin high-k dielectrics as capping layers on oxide/nitride/oxide memory stacks with respect to suppression of electron injection from the gate electrode during erase...
Grieb, M., Peters, D., Bauer, A.J., Friedrichs, P., Ryssel, H.
The reliability of thermal oxides grown on n-type 4H-SiC C(000-1) face wafer has been investigated. In order to examine the influence of different oxidation atmospheres and temperatures on the...
Simulation assessment of process options for advanced CMOS devices (2009)
Kampen, C., Burenkov, A., Lorenz, J., Ryssel, H.
The simulation of process options for advanced CMOS devices is discussed in this work. Advanced rapid thermal annealing schemes are applied to fully depleted silicon on insulator MOSFETs with a...
Pfeffer, M., Pfitzner, L., Ocker, B., Öchsner, R., Ryssel, H., Verdonck, P.
Semiconductor wafer fabrication facilities (wafer fabs) are amongst the most complex production facilities. State-of-the-art wafer fabs comprise a large product variety, hundreds of processing steps...
Complementary metrology within a European joint laboratory (2009)
Nutsch, A., Beckhoff, B., Altmann, R., Giubertoni, D., Hoenicke, P., ...
Fet, A., Häublein, V., Bauer, A.J., Ryssel, H.
While the debate about the exact cause of Fermi level pinning in metal-high-k dielectric gate stacks is ongoing, several solutions for engineering the threshold voltage V-t of the gate stacks have...
Schmitt, H., Amon, B., Beuer, S., Petersen, S., Rommel, M., Bauer, A.J., ...
Imprint specific process parameters like the residual layer thickness and the etch resistance of the UV polymers for the substrate etch process have to be optimized to introduce UV nanoimprint...
Experimental observation of FIB induced lateral damage on silicon samples (2009)
Spoldi, G., Beuer, S., Rommel, M., Yanev, V., Bauer, A.J., Ryssel, H.
Scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM) were used to analyze focused ion beam (FIB) induced lateral damage around milled structures on silicon. For...
Electrical characterization of MOS structures with deposited oxides annealed in N2O or NO (2009)
Grieb, M., Noborio, M., Peters, D., Bauer, A.J., Friedrichs, P., Kimoto, T., ...
In this work, the electrical characteristics and the reliability of 80nm thick deposited oxides annealed in NO and N2O on the 4H-SiC Si-face for gate oxide application in MOS devices is analyzed by...
Weinreich, W., Reiche, R., Lemberger, M., Jegert, G., Müller, J., Wilde, L., ...
Polarity asymmetries in JSV and CSV characteristics of symmetrical MIM capacitors with amorphous and crystalline Zr(1\'02x)AlxO2 films and TiN electrodes are evaluated. Physical analysis of the...
Analysis of the DC-arc behavior of a novel 3D-active fuse (2009)
Dorp, J. Vom, Berberich, S.E., Bauer, A.J., Ryssel, H.
In this work, the DC-arc behavior of an active fuse integrated into a CMOS process is described. The purpose of this fuse is to prevent serious hazards in power electronics in the case of a...
Lanthanum implantation for threshold voltage control in metal/high-k devices (2009)
Fet, A., Häublein, V., Bauer, A.J., Ryssel, H., Frey, L.
In this paper the tuning of the n-metal effective work function by implantation of lanthanum is demonstrated. The effect of implantation and thermal annealing on the device flat-band voltage is...
Murakami, K., Matsubara, N., Ichikawa, S., Kisa, T., Nakayama, T., Takamoto, K., ...
Pt pillars with a waist size of 20 nm and a length of 300 nm were fabricated by electron-beam-induced deposition and characterized by transmission electron microscopy before and after annealing or...
Silicon based trench hole power capacitor (2009)
Berberich, S.E., Dorp, J. Vom, Bauer, A.J., Ryssel, H.
In this work, we introduce a high voltage 3D-capacitor as a novel passive power device for a 400V application. This device is realized in silicon technology which allows high process reproducibility,...
Toumi, S., Ferhat-Hamida, A., Boussouar, L., Sellai, A., Ouennoughi, Z., Ryssel, H.
The Gaussian distribution model have been used to analyze the anomalies observed in tungsten (W)/4H-SiC current voltage characteristics due to the barrier inhomogeneities that prevail at the...
Rommel, M., Bauer, A.J., Ryssel, H.
In this work, an extensive injection-level-dependent carrier lifetime study on intentionally iron-contaminated boron-doped silicon has been performed by using the Elymat carrier lifetime method. The...
SSRM characterisation of FIB induced damage in silicon (2008)
Beuer, S., Yanev, V., Rommel, M., Bauer, A.J., Ryssel, H.
Scanning spreading resistance microscopy (SSRM) has been applied to study focused ion beam (FIB) induced damage in silicon in dependence on ion irradiation doses from 10(exp 12) cm-2 to 2·10(exp 16)...
Beuer, S., Rommel, M., Petersen, S., Amon, B., Sulzbach, T., Engl, W., ...
Recent improvements in the fabrication of integrated field emitters with a control electrode into scanning probe microscopy sensors are presented and discussed. Compared to earlier work the precursor...
Custom-specific UV nanoimprint templates and life-time of antisticking layers (2008)
Schmitt, H., Zeidler, M., Rommel, M., Bauer, A.J., Ryssel, H.
UV nanoimprint lithography (UV NIL) is attracting more and more interest, because of its potential to become a high-resolution, low-cost patterning technique. To establish UV NIL as a low-cost...
Application-driven simulation of nanoscaled CMOS transistors and circuits (2008)
Burenkov, A., Kampen, C., Baer, E., Lorenz, J., Ryssel, H.
Problems in the application-driven simulation of nanoscaled CMOS transistors and circuits are addressed in this paper. First, major physical effects determining the transistor performance at...
Distribution and segregation of arsenic at the SiO2/Si interface (2008)
Steen, C., Martinez-Limia, A., Pichler, P., Ryssel, H., Paul, S., Lerch, W., ...
The segregation and pile-up of arsenic atoms at the Si/SiO2 interface in steady state was investigated in detail by a combination of gracing incidence x-ray flu orescence spectroscopy (GI-XRF)...
Distribution and segregation of arsenic at the SiO2/Si interface (2008)
Steen, C., Martinez-Limia, A., Pichler, P., Ryssel, H., Paul, S., Lerch, W., ...
The segregation and pile-up of arsenic atoms at the Si/SiO2 interface in steady state was investigated in detail by a combination of gracing incidence x-ray flu orescence spectroscopy (GI-XRF)...
Pre-silicon SPICE modeling of nano-scaled SOI MOSFETs (2008)
Burenkov, A., Kampen, C., Lorenz, J., Ryssel, H.
Problems of pre-silicon compact modeling of nano-scaled silicon-on-insulator MOSFETs are addressed using the extraction of SPICE model parameters directly from numerical TCAD simulations. Although...
Kampen, C., Burenkov, A., Lorenz, J., Ryssel, H.
A method for decreasing the parasitic source and drain contact resistances in decanano-scaled CMOS devices is presented in this work. The improvement of the electrical performance of the CMOS devices...
Detailed arsenic concentration profiles at Si/SiO2 interfaces (2008)
Pei, L., Duscher, G., Steen, C., Pichler, P., Ryssel, H., Napolitani, E., ...
The pile-up of arsenic at the Si/SiO2 interface after As implantation and annealing was investigated by high resolution Z-contrast imaging, electron energy-loss spectroscopy (EELS), grazing incidence...
Detailed arsenic concentration profiles at Si/SiO2 interfaces (2008)
Pei, L., Duscher, G., Steen, C., Pichler, P., Ryssel, H., Napolitani, E., ...
The pile-up of arsenic at the Si/SiO2 interface after As implantation and annealing was investigated by high resolution Z-contrast imaging, electron energy-loss spectroscopy (EELS), grazing incidence...
Erlbacher, T., Jank, M.P.M., Ryssel, H., Frey, L., Engl, R., Walter, A., ...
Deposition methods for the self-aligned growth of organometallic charge-transfer complexes for use as a conductivity-modulated, nonvolatile switching layer are presented. First, a deposition from...
Advanced annealing strategies for the 32 nm node (2008)
Kampen, C., Martinez-Limia, A., Pichler, P., Burenkov, A., Lorenz, J., Ryssel, H.
In this work, the influences of advanced annealing schemes, spike and flash annealing and combinations of them, on the electrical behavior of modern FD SOI MOSFETs have been investigated by numerical...
HfSiO/SiO2- and SiO2/HfSiO/SiO2-gate stacks for non-volatile memories (2008)
Erlbacher, T., Jank, M.P.M., Lemberger, M., Bauer, A.J., Ryssel, H.
The use of hafnium silicate (HfSiO) as a charge trapping layer in charge-based non-volatile memory cells will be discussed. First, fundamental properties (e.g., dielectric constant, trap...
Kampen, C., Burenkov, A., Lorenz, J., Ryssel, H., Aubry-Fortuna, V., Bournel, A.
This paper presents a quantummechanical modification of the conventional driftdiffusion model for simulation of quasi-ballistic carrier transport under high-field conditions. Thereby, the saturation...
Custom-specific UV nanoimprint templates and life-time of antisticking layers (2008)
Schmitt, H., Zeidler, M., Rommel, M., Bauer, A.J., Ryssel, H.
UV nanoimprint lithography (UV NIL) is attracting more and more interest, because of its potential to become a high-resolution, low-cost patterning technique. To establish UV NIL as a low-cost...
Segregation of antimony to Si/SiO2 interfaces (2008)
Steen, C., Pichler, P., Ryssel, H.
Segregation of n-type dopants to interfaces is an important contribution to the loss of electrical activity in current and future device generations. In this work, the segregation and pile-up of...
HfSiO/SiO2- and SiO2/HfSiO/SiO2-gate stacks for non-volatile memories (2008)
Erlbacher, T., Jank, M.P.M., Lemberger, M., Bauer, A.J., Ryssel, H.
The use of hafnium silicate (HfSiO) as a charge trapping layer in charge-based non-volatile memory cells will be discussed. First, fundamental properties (e.g., dielectric constant, trap...
Erlbacher, T., Jank, M.P.M., Ryssel, H., Frey, L., Engl, R., Walter, A., ...
Deposition methods for the self-aligned growth of organometallic charge-transfer complexes for use as a conductivity-modulated, nonvolatile switching layer are presented. First, a deposition from...
Polymer bonded soft magnetic particles for planar inductive devices (2008)
Egelkraut, S., Ryssel, H., März, M.
In this study, polymer bonded soft magnetic materials (PBSMM) were investigated for the application as a mag-netic core and electromagnetic shielding material in planar inductive devices. Planar...
Häublein, V., Frey, L., Ryssel, H.
Contamination due to mass interferences generally leads to severe problems in ion implantation. To be able to prevent this kind of contamination, the cause of the respective mass interference has to...
On the stability of fully depleted SOI MOSFETs under lithography process variations (2008)
Kampen, C., Fühner, T., Burenkov, A., Erdmann, A., Lorenz, J., Ryssel, H.
In this paper, a TCAD-based simulation study on lithography process-induced gate length variations has been performed. This study aims at evaluating fully depleted silicon on insulator (FD SOI)...
Threshold voltage engineering by lanthanide doping of the MOS gate stack (2008)
Fet, A., Häublein, V., Ryssel, H.
With the replacement of traditional polysilicon and silicon dioxide by metal gates and high-k dielectrics, respectively, in the MIS gate stack for the 45 nm technology node, higher than expected...
Sekowski, M., Burenkov, A., Hernández-Mangas, J., Martinez-Limia, A., Ryssel, H.
Der Zerstäubungsprozess von Germanium und Silicium wird experimentell und durch Monte-Carlo Simulationen untersucht. Insbesondere wird der streifende Ioneneinfall untersucht, da hier die...
Sekowski, M., Burenkov, A., Hernández-Mangas, J., Martinez-Limia, A., Ryssel, H.
Der Zerstäubungsprozess von Germanium und Silicium wird experimentell und durch Monte-Carlo Simulationen untersucht. Insbesondere wird der streifende Ioneneinfall untersucht, da hier die...
Ion implantation into nanoparticulate functional layers (2008)
Walther, S., Jank, M.P.M., Ebbers, A., Ryssel, H.
Layers of silicon nanoparticles with resistivity down to 10 mΩcm are demonstrated using chemical and thermal treatment as well as ion implantation. Morphology and crystallinity of the layers...
DC-arc behavior of a novel active fuse (2008)
Dorp, J. Vom, Berberich, S.E., Bauer, A.J., Ryssel, H.
In this work, new results on an active fuse which is a novel power device to prevent serious hazards in power electronics in the case of a malfunction are presented. The focus of this work is on the...
Ion implantation into nanoparticulate functional layers (2008)
Walther, S., Jank, M.P.M., Ebbers, A., Ryssel, H.
Layers of silicon nanoparticles with resistivity down to 10 mΩcm are demonstrated using chemical and thermal treatment as well as ion implantation. Morphology and crystallinity of the layers...
Highly filled polymers for power passives packaging (2008)
Egelkraut, S., Heinle, C., Eckardt, B., Krämer, P., Brocka, Z., März, M., ...
This paper presents a packaging technology for passive devices and characterization results of a demonstrator. Due to high demands on weight, cost and size this demonstrator was chosen to show the...
Yanev, V., Rommel, M., Lemberger, M., Petersen, S., Amon, B., Erlbacher, T., ...
High-k dielectric layers (HfSixOy and ZrO2) with different film morphologies were investigated by tunneling atomic-force microscopy (TUNA). Different current distributions were observed for amorphous...
Yanev, V., Rommel, M., Spoldi, G., Beuer, S., Amon, B., Petersen, S., ...
Yanev, V., Rommel, M., Spoldi, G., Beuer, S., Amon, B., Petersen, S., ...
Barrier inhomogeneities of tungsten Schotty diodes on 4H-SiC (2008)
Hamida, A.F., Ouennoughi, Z., Sellai, A., Weiss, R., Ryssel, H.
Electrical properties of tungsten on silicon carbide (4H-SiC) Schottky diodes are investigated through the analysis of the forward currentvoltage (IV) characteristics measured at elevated...
Lemberger, M., Schön, F., Dirnecker, T., Jank, M.P.M., Frey, L., Ryssel, H., ...
In this work, hafnium silicate layers on Si and Ge wafers for gate dielectric application in metal-oxide-semiconductor devices are investigated. Films are deposited by metal-organic (MO)CVD using the...
Hafnium silicate as control oxide in non-volatile memories (2007)
Erlbacher, T., Bauer, A.J., Ryssel, H.
SONOS-type MIS capacitors with hafnium silicate as a control oxide are characterized and compared to devices featuring a conventional SONOS gate stack. Write operation is comparable for both gate...
Steen, C., Nutsch, A., Pichler, P., Ryssel, H.
During the fabrication process of integrated circuits, dopant atoms segregate to energetically favorable sites at the interface between silicon and silicon dioxide. Because of the continuously...
Characterization of the Segregation of Arsenic at the Interface SiO2/Si (2007)
Steen, C., Pichler, P., Ryssel, H., Pei, L., Duscher, G., Werner, M., ...
The segregation of As atoms at the Si/SiO2 interface during annealing was investigated by grazing incidence X-ray fluorescence spectroscopy in combination with successive removal of silicon layers by...
Lemberger, M., Thiemann, S., Baunemann, A., Parala, H., Fischer, R.A., Hinz, J., ...
Tantalum nitride films obtained by MOCVD using a tert-butylimido-tris-ethylmethylamido-tantalum (TBTEMT, Ta(NCMe3)(NEtMe)(3)) compound were physically and electrically investigated. Lowest...
Accurate parameter extraction for the simulation of direct structuring by ion beams (2007)
Beuer, S., Rommel, M., Lehrer, C., Platzgummer, E., Kvasnica, S., Bauer, A.J., ...
In this work, methods for an accurate extraction of parameters for the simulation of nanoscaled structuring by focused ion beams will be discussed. For this purpose the quantitative understanding of...
Characterization of the pile-up of As at the SiO2/Si interface (2007)
Steen, C., Martinez-Limia, A., Pichler, P., Ryssel, H., Pei, L., Duscher, G., ...
The pile up of As at the SiO2/Si interface was investigated by grazing incidence X-ray fluorescence spectroscopy in combination with removal of silicon layers by etching with thicknesses on the order...
UV nanoimprint materials: Surface energies, residual layers, and imprint quality (2007)
Schmitt, H., Frey, L., Ryssel, H., Rommel, M., Lehrer, C.
UV nanoimprint lithography is attracting more and more interest, because it has the potential of becoming a high-resolution, low-cost patterning technique. The availability of suitable UV curing...
Rommel, M., Bauer, A.J., Ryssel, H.
In this work, an extensive injection level dependent carrier lifetime study on intentionally iron contaminated boron-doped silicon has been performed by using the Elymat carrier lifetime method. The...
Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths (2007)
Burenkov, A., Kampen, C., Lorenz, J., Ryssel, H.
Coupled process and device simulation has been applied to investigate the physical processes which determine the performance and scaling properties of fully depleted thin-silicon-body SOI based...
Beuer, S., Rommel, M., Petersen, S., Amon, B., Sulzbach, T., Engl, W., ...
High voltage 3D-capacitor (2007)
Berberich, S.E., Bauer, A.J., Ryssel, H.
In this work, we introduce a high voltage 3D-capacitor as a novel passive power device for a 400 V application. This device is realized in silicon technology which allows process reproducibility,...
Detection and review of crystal originated surface and sub surface defects on bare silicon (2007)
Nutsch, A., Funakoshi, T., Pfitzner, L., Steffen, R., Supplieth, F., Ryssel, H.
The continuous dimensional reduction for micro-and nano electronics is driving the technology for yield relevant defect detection. Defects originating in the crystal are always present in silicon...
Beuer, S., Rommel, M., Petersen, S., Amon, B., Sulzbach, T., Engl, W., ...
UV nanoimprint materials: Surface energies, residual layers, and imprint quality (2007)
Schmitt, H., Frey, L., Ryssel, H., Rommel, M., Lehrer, C.
UV nanoimprint lithography is attracting more and more interest, because it has the potential of becoming a high-resolution, low-cost patterning technique. The availability of suitable UV curing...
Hafnium silicate as control oxide in non-volatile memories (2007)
Erlbacher, T., Bauer, A.J., Ryssel, H.
SONOS-type MIS capacitors with hafnium silicate as a control oxide are characterized and compared to devices featuring a conventional SONOS gate stack. Write operation is comparable for both gate...
Standardization of integrated ellipsometry for semiconductor manufacturing (2006)
Roeder, G., Schellenberger, M., Pfitzner, L., Ryssel, H., Richter, U., Stehle, J.L., ...
Prospects for the realization of APC in a distributed 300 mm R&D-line (2006)
Roeder, G., Schellenberger, M., Öchsner, R., Pfeffer, M., Frickinger, J., Pfitzner, L., ...
Öchsner, R., Frickinger, J., Pfeffer, M., Schellenberger, M., Roeder, G., Pfitzner, L., ...
This paper describes the objectives and results of a joint European project named FLYING WAFER. The goal of the project was to provide a methodology for interlinking European R&D centers in micro-...
EP 1693863 A1 UPAB: 20070123 NOVELTY - The piece (1) has a device for producing and releasing electrical connections in which electrical energy storage (2) is integrated, where the storage contains...
Creation of e-learning content for microelectronics manufacturing (2006)
Öchsner, R., Pfeffer, M., Pfitzner, L., Ryssel, H., Beer, K., Boldin, M., ...
In this paper, we report on the methodology, approach, and results concerning the creation of e-learning content for microelectronics manufacturing. The work was done in the framework of an EC-funded...
Creation of e-learning content for microelectronics manufacturing (2006)
Öchsner, R., Pfeffer, M., Pfitzner, L., Ryssel, H., Beer, K., Boldin, M., ...
In this paper, we report on methodology, approach, and results concerning the cr eation of e-learning content for microelectronics manufacturing. The work was d one in the framework of an EC-funded...
Unit process aspects for APC-software implementation (2005)
Roeder, G., Schellenberger, M., Pfitzner, L., Ryssel, H., Spitzlsperger, G.
Ion sputtering at grazing incidence for SIMS-analysis (2005)
Ullrich, M., Burenkov, A., Ryssel, H.
The angular distributions of sputtered atoms at large angle oblique and grazing incidence of the primary ion beam in SIMS-analysis have been simulated. They exhibit distinct arc-like areas of an...
Annealing of aluminum implanted 4H-SiC: Comparison of furnace and lamp annealing (2005)
Rambach, M., Bauer, A.J., Frey, L., Friedrichs, P., Ryssel, H.
Furnace annealing and lamp annealing of aluminum implanted layers in 4H silicon carbide (SiC) were investigated with respect to surface degradation and electrical parameters. A sheet resistance of...
Rommel, M., Groß, M., Frey, L., Bauer, A.J., Ryssel, H.
In this work, a new method is presented for a direct and fast extraction of effective interface state densities Dit,eff at semiconductor insulator interfaces from photocurrent measurements. A...
Rommel, M., Groß, M., Ettinger, A., Lemberger, M., Bauer, A.J., Frey, L., ...
In this work, silicon insulator interfaces are characterized by detailed photocurrent analysis. Results obtained for a variety of samples with different insulator layers and layer thicknesses are...
Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor (2005)
Lemberger, M., Paskaleva, A., Zurcher, S., Bauer, A.J., Frey, L., Ryssel, H.
Verfahren zur Verringerung der Partikelabgabe und Partikelaufnahme einer Oberflaeche (2004)
Birnbaum, E., Kluge, A., Ryssel, H., Ryzlewicz, C.
DE 19833718 A UPAB: 20000330 NOVELTY - Surface particle emission and deposition reduction comprises simultaneous high vacuum vapor deposition and ion bombardment using a stoichiometric ratio of...
Ion sputtering at grazing incidence for SIMS-analysis (2004)
Ullrich, M., Burenkov, A., Ryssel, H.
The angular distributions of sputtered atoms at large angle oblique and grazing incidence of the primary ion beam in SIMS-analysis have been simulated. They exhibit distinct arc-like areas of an...
Three-dimensional simulation of ionized metal plasma vapor deposition (2004)
Kistler, S., Bär, E., Lorenz, J., Ryssel, H.
A physically based model for full three-dimensional(3D)feature-scale simulation of ionized metal plasma (IMP) deposition has been implemented. It assumes a dynamical equilibrium of particle fluxes...
Bär, E., Lorenz, J., Ryssel, H.
The simulation of chemical-mechanical polishing (CMP) is particularly important within integrated topography process simulation environments to allow for studying the interplay between etching,...
3D feature-scale simulation of sputter etching with coupling to equipment simulation (2004)
Bär, E., Lorenz, J., Ryssel, H.
Feature-scale simulation of sputter etching has been coupled to equipment parameters by means of transferring angular distributions of ions as provided by equipment simulation to our simulation code....
Lehrer, C., Frey, L., Petersen, S., Ryssel, H., Schäfer, M., Sulzbach, T.
Material processing by focused ion-beam milling and electron-beam-induced deposition was applied for the integration of field emitters into scanning probe microscopy (SPM) sensors. Geometry of the...
Optical characterization of ferroelectric Strontium-Bismuth-Tantalate (SBT) thin films (2004)
Schmidt, C., Petrik, P., Schneider, C., Fried, M., Lohner, T., Barsony, I., ...
Strontiumbismuthtantalate (SBT) is a new kind of dielectric layer material for use in semiconductor devices. The optical layer parameters of SBT were characterized by spectroscopic ellipsometry using...
Fibroblasts adhesion on ion beam modified polyethylene (2004)
Svorcik, V., Tomsov, P., Dvornkov, B., Hnatowicz, V., Ochsner, R., Ryssel, H.
Investigation of rapid thermal annealed pn-junctions in SiC (2004)
Rambach, M., Weiss, R., Frey, L., Bauer, A.J., Ryssel, H.
Rapid thermal annealing (RTA) of 4H-silicon carbide (SiC) is investigated for the activation of Al implanted layers. The lowest sheet resistances achieved for an Al doping of 1(.)10(15)cm(-2) were...
E-Learning for microelectronics manufacturing (2004)
Oechsner, R., Pfeffer, M., Pfitzner, L., Ryssel, H., Beer, K., Boldin, M.
In this paper, we report on an EC-funded project concerning the creation of content for e-learning for microelectronics manufacturing. The project E-LIMM (E-L earning for Microelectronics...
Design, fabrication and characterization of a microactuator for nebulization of fluids (2004)
Yasenov, N., Berberich, S.E., Frey, L., Ryssel, H.
The nebulization of fluids plays an important role in the medical treatment of several diseases. The most important aspect of the nebulization of medicaments is the diameter of the generated...
Bär, E., Lorenz, J., Ryssel, H.
For simulating superconformal copper deposition by chemical vapor deposition (C VD) or electroplating (EP), a model based on the curvature-enhanced accelerator coverage (CEAC) mechanism has been...
Wafer reclaim in semiconductor manufacturing (2003)
Frickinger, J., Nutsch, A., Pfitzner, L., Ryssel, H., Zielonka, G.
Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors (2003)
Lemberger, M., Paskaleva, A., Zürcher, S., Bauer, A.J., Frey, L., Ryssel, H.
Zirconium silicate films obtained from novel MOCVD precursors (2003)
Lemberger, M., Paskaleva, A., Zürcher, S., Bauer, A.J., Frey, L., Ryssel, H.
Influence of antenna shape and resist patterns on charging damage during ion implantation (2003)
Dirnecker, T., Bauer, A.J., Beyer, A., Frey, L., Henke, D., Ruf, A., ...
Nanoscale effects in focused ion beam processing (2003)
Frey, L., Lehrer, C., Ryssel, H.
Focused ion beams with diameters of 8 to 50 nm are used for material processing in the nanoscale regime. In this paper, effects of the ion beam-solid interaction determining the formation of small...
Trench sidewall doping for lateral power devices (2003)
Berberich, S.E., Bauer, A.J., Frey, L., Ryssel, H.
Sidewall doping of trenches with a high aspect ratio and a high grade of anisotropy (90° +- 0.5°) by ion implantation has been investigated. Two-dimensional (2D) process simulation and delineation...
Cell adhesion on modified polyethylene (2002)
Svorcik, V., Rockova, K., Dvorancova, B., Broz, L., Hnatowicz, V., Öchsner, R., ...
Development of enhanced depth-resolution technique for shallow dopant profiles (2002)
Fujita, M., Tajima, J., Nakagawa, T., Abo, S., Kinomura, A., Paszti, F., ...
Effect of barium contamination on gate oxide integrity in high-k DRAM (2002)
Boubekeur, H., Mikolajick, T., Nagel, N., Bauer, A., Frey, L., Ryssel, H.
Influence of photoresist pattern on charging damage during high current ion implantation (2002)
Dirnecker, T., Ruf, A., Frey, L., Beyer, A., Bauer, A.J., Henke, D., ...
The influence of photoresist pattern on charging damage of gate oxides during high current arsenic implantation is studied. Metal-oxide- semiconductor (MOS) capacitors of 10 mu m/sup 2/ active area...
Phi-scatterometry for integrated linewidth and process control in DRAM manufacturing (2002)
Hettwer, A., Benesch, N., Schneider, C., Pfitzner, L., Ryssel, H.
A cost-effective scatterometry method is presented that is suited for integrated pattern and process control and is valuable as a supplement to conventional SEMs. The phi-scatterometry procedure is...
Bär, E., Lorenz, J., Ryssel, H.
Simulation has been used to evaluate the influence of the geometry of etched vias (i.e. of varying aspect ratios and sidewall taper angles) in terms of the step coverage that can be achieved for...
Determination of aluminum diffusion parameters in silicon (2002)
Krause, O., Picher, P., Ryssel, H.
Aluminum as the fastest diffusing acceptor dopant in silicon is commonly used for the fabrication of power semiconductors with p-n junction depths ranging from some microns to more than hundred...
MOCVD of titanium dioxide on the basis of new precursors (2002)
Leistner, T., Lehmbacher, K., Härter, P., Schmidt, C., Bauer, A.J., Frey, L., ...
Thin films with a considerably higher dielectric constant than silicon dioxide, for example titanium dioxide or titanium containing barium strontium titanate, can be used for dielectrics in...
Petrik, P., Khanh, N.Q., Horvath, Z.E., Zolnai, Z., Barsony, I., Lohner, T., ...
Optical, compositional, and structural properties of BaxSr1-xTiO3 (BST) films prepared by metal-organic chemical vapor deposition on platinum-coated oxidized silicon were characterized using three...
HandMon-ISPM: Handling monitoring in a loading stations of a furnaces (2002)
Trunk, R., Schmid, H., Schneider, C., Pfitzner, L., Ryssel, H., Bernhardt, H., ...
Scratching wafers coated with the commonly used layer materials in semiconductor processing generates a significant large number of particles during loading or unloading with a misaligned handling...
Non-destructive characterization of strontium bismuth tantalate films (2002)
Petrik, P., Khanh, N.Q., Horvath, Z.E., Zoknai, P.Z., Barsony, I., Lohner, T., ...
Optical,compositional,and structural properties ofstrontium bismuth tantalate (SBT)fi lms deposited in a high throughput low-pressure chemical vapor deposition reactor using liquid metal-organic...
Platinum contamination issues in ferroelectric memories (2002)
Boubekeur, H., Mikolajick, T., Pamler, W., Hopfner, J., Frey, L., Ryssel, H.
Amino acids grafting of Ar+ ions modified PE (2001)
Svorcik, V., Hnatowicz, V., Stopka, P., Bacáková, L., Heitz, J., Öchsner, R., ...
Polyethylene (PE) was irradiated with 63 keV Ar+ ions to the fluences from 1×101 2 to 3×1015 cm-2 and then grafted at room temperature from water solution with amino acids (alanine, leucine). Using...
In Situ Particle Measurement System in Loading Stations of Furnaces (2001)
Trunk, R., Schmid, H., Schneider, C., Pfitzner, L., Ryssel, H., Bernhardt, H., ...
In-situ particle measurement in loading stations of furnaces (2001)
Trunk, R., Schneider, C., Pfitzner, L., Ryssel, H., Storbeck, O.
Development of sensors for the measurement of chamber wall depositions (2001)
Schneider, C., Pfitzner, L., Ryssel, H., Marx, E., Schneider, T.
Ziel: Ziel dieses Teilprojektes war die Entwicklung und der Test von Sensoren zur Messung der Schichtdicke von dielektrischen Kammerwandbelegungen. Mit der Kenntnis der aktuellen Schichtdicke kann...
Burenkov, A., Mu, Y., Ryssel, H.
Local electronic stopping was taken into account when simulating the ion implantation profiles in non-crystalline materials with the Monte-Carlo method. The effect of the local electronic stopping is...
Limitations of focused ion beam nanomachining (2001)
Lehrer, C., Frey, L., Petersen, S., Ryssel, H.
In this article, some limitations of the processing of structures with dimensions in the nanometer range by focused ion beams will be discussed. In order to enable exact depth control of nanometer...
Barium, Strontium and Bismuth Contamination in CMOS Processes (2001)
Boubekeur, H., Mikolajick, T., Höpfner, J., Dehm, C., Pamler, W., Steiner, J., ...
Contamination aspects of ferroelectric (SrBi2Ta2O9) and high dielectric constant (Ba,Sr)TiO3 materials in CMOS processes were investigated in this paper. TXRF, VPD-TXRF, and ToF-SIMS were used to...
Integrated metrology. An enabler for advanced process control (APC) (2001)
Schneider, C., Pfitzner, L., Ryssel, H.
Advanced process control (APC) techniques become more and more important as short innovation cycles in microelectronics and a highly competitive market requires cost-effective solutions in...
Control of organic contamination in CMOS manufacturing (2001)
Bügler, J., Frickinger, J., Zielonka, G., Pfitzner, L., Ryssel, H., Schottler, M.
Trace analysis for 300 mm wafers and processes with total- reflection x-ray-fluorescence (2001)
Nutsch, A., Erdmann, V., Zielonka, G., Pfitzner, L., Ryssel, H.
Strobel, S., Bauer, A.J., Beichele, M., Ryssel, H.
PMOS devices with and without nitrogen implant into the gate electrode before doping with boron and with nitridation of the gate oxide were manufactured. The influence of nitrogen on the penetration...
Hnatowicz, V., Vacik, J., Svorcik, V., Rybka, V., Ryssel, H., Kluge, A.
Polyimide (Upilex), polyethyleneterephtalate, polystyrene and polyethylene were irradiated with 20-200 KeV C+, N+, F+, Ar and Xe+ ions to the fluences up to 10(17) cm(-2) and the depth profiles of...
Impact of platinum contamination on ferroelectric memories (2001)
Boubekeur, H., Mikolajick, T., Nagel, N., Dehm, C., Pamler, W., Bauer, A., ...
The impact of platinum contamination on the breakdown properties of gate oxide is reported. Wafers were intentionally contaminated with 1x10(13) to 4x10(14) at/cm(2) Pt after a 7.5 nm gate oxide...
Improvement in electrical properties of Simni films by multiple-steps implantation (2001)
Lu, D.T., Huang, D., Ryssel, H.
SOI-SIMNI (Silicon On Insulator-Separation by Implanted Nitrogen) films were formed by standard and multiple-step implantation methods. The Hall-effects measurements (4 - 300K) show that the...
Field emitter array fabricated using focused ion and electron beam induced reaction (2000)
Yavas, O., Ochiai, C., Takai, M., Park, Y.K., Lehrer, C., Lipp, S., ...
In-production monitoring and control of in situ-chamber clean processes (2000)
Roeder, G., Andrian-Werburg, M. Von, Tschaftary, T., Schneider, C., Pfitzner, L., Ryssel, H., ...
Phi-scatterometry for on-line process control (2000)
Benesch, N., Hettwer, A., Schneider, C., Pfitzner, L., Ryssel, H., Broermann, O., ...
Feed-forward control for a lithography/etch sequence (2000)
Öchsner, R., Tschaftary, T., Sommer, S., Pfitzner, L., Ryssel, H., Gerath, H., ...
Feed-forward and feedback control are used to compensate for variations caused by processes or equipment. The variations may be due to e.g. aging or shift and they may occur within a single process...
Adhesion and proliferation of keratinocytes on ion beam modified polyethylene (2000)
Svorcik, V., Walachova, K., Proskova, K., Dvoankova, B., Vogtova, D., Öchsner, R., ...
Polyethylene (PE) foils were modified by irradiation with Ar+ and Xe+ ions to different fluences and different physico-chemical properties of the irradiated PE were studied in relation to adhesion...
Phosphorus ion shower implantation for special power IC applications (2000)
Kröner, F., Schork, R., Frey, L., Burenkov, A., Ryssel, H.
Ion shower implantation (ISI) shows advantages of both ion implantation and plasma immersion doping and is, therefore, a promising alternative doping method for high dose and low energy implants....
Modeling the Amorphization of Si due to the Implantation of As, Ge, and Si (2000)
Stiebel, D., Burenkov, A., Pichler, P., Cristiano, F., Claverie, A., Ryssel, H.
New experiments have been performed to measure the two-dimensional amorphous/crystalline (a/c)-interface after implantation of arsenic, germanium, and silicon atoms. The experimental results obtained...
Modelling of intrinsic aluminum diffusion for future power devices (2000)
Krause, O., Pichler, P., Ryssel, H.
Aluminum as the fastest diffusing acceptor dopant is commonly used for the fabrication of silicon-based power semiconductors with p/n-junctions depths ranging from microns to more than hundred...
A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation (2000)
Burenkov, A., Tietzel, K., Hössinger, A., Lorenz, J., Ryssel, H., Selberherr, S.
The high accuracy which is necessary for modern process simulation often requires the use of Monte-Carlo ion implantation simulation methods with the disadvantage of very long simulation times...
Vacancy-Nitrogen Complexes in Float-Zone Silicon (2000)
Quast, F., Pichler, P., Ryssel, H., Falster, R.
The influence of nitrogen on vacancy reactions during float-zone (FZ) crystal growth and during subsequent inert diffusion steps in the range from 650 to 1000°C was investigated. Using platinum...
Mu, Y., Burenkov, A., Ryssel, H., Xia, Y., Mei, L.
In this work an attempt to interpret the charge state dependent stopping of slow ions using quantum mechanical scattering theory was made. The electronic stopping of differently charged ions (0
Bär, E., Lorenz, J., Ryssel, H.
In this paper, an approach is presented which is suitable for predicting the shape of copper layers deposited by low-pressure chemical vapor deposition (LPCVD) on three-dimensional (3D) features as...
Verfahren und Vorrichtung zur Ueberfuehrung eines Fluessigkeitsstromes in einen Gasstrom (2000)
Strzyzewski, P., Roeder, G., Pfitzner, L., Ryssel, H.
In a process and a device for the transfer of a liquid stream into a gas stream, a liquid stream is brought to an evaporation volume, the liquid stream is dispersed in order to increase the liquid...
Jank, M.P.M., Lemberger, M., Frey, L., Ryssel, H.
For characterization of oxide damage created by through the gate implantation (TGI) of boron, we prepared samples that allowed us to investigate reliability degradation and intrinsic electron trap...
Petrik, P., Lehnert, W., Schneider, C., Fried, M., Lohner, T., Gyulai, J., ...
A spectroscopic ellipsometer was integrated in a vertical furnace for measurement and control during chemical vapor deposition and thermal oxidation processes. The major goal of this activity was to...
Petrik, P., Lohner, T., Fried, M., Biro, L.P., Khanh, N.Q., Gyulai, J., ...
Aspects of barium contamination in high dielectric dynamic random-access memories (2000)
Boubekeur, H., Hopfner, J., Mikolajick, T., Dehm, C., Frey, L., Ryssel, H.
Li+ grafting of ion irradiated polyethylene (1999)
Svorcik, V., Rybka, V., Vacik, J., Hnatowicz, V., Ochsner, R., Ryssel, H.
Foils of oriented polyethylene (PE) were irradiated with 63 keV Ar+ and 155 keV Xe+ ions to different fluences at room temperature and then doped from water solution of LiCl. The as irradiated and...
Comparison of beam-induced deposition using ion microprobe (1999)
Park, Y.S., Nagai, T., Takai, M., Lehrer, C., Frey, L., Ryssel, H.
The localized Pt deposition on Si by 30 keV Ga+ focused ion beam (FIB), 10 keV electron beam (EB) or dual beams (FIB and EB) using precursor gas has been compared by analysis using a 300 keV Be2+...
Biro, L.P., Mark, G.I., Gyulai, J., Rozlosnik, N., Kurti, J., Szabo, B., ...
Carbon nanotubes were evidenced by atomic force microscopy and scanning tunneling microscopy on highly oriented pyrolytic graphite irradiated with high energy ions (215 MeV Ne, 209 MeV Kr, 246 MeV...
Bauer, A.J., Froeschle, B., Beichele, M., Ryssel, H.
A cleaning process using anhydrous hydrofluoric acid/methanol (AHF) and ozone was carried out in a vapor phase cleaning module (VPC). The dependence of the AHF vapor phase etch rate of thermally...
Nondestructive analytical tools (e.g., spectral ellipsometry, thermal wave analysis, atomic force analysis, etc.) have been used to characterize thin titanium silicide films. The parameters of...
MOCVD of ferroelectric thin films (1999)
Schmidt, C., Lehnert, W., Leistner, T., Frey, L., Ryssel, H.
Ferroelectric thin films of lead titanate (PbTiO3) and lead zirconate titanate (PZT) were grown in a cold-wall low-pressure chemical vapor deposition reactor on silicon substrates with diameters up...
The influence of surface oxidation on the pH-sensing properties of silicon nitride (1999)
Mikolajick, T., Kuhnhold, R., Schnupp, R., Ryssel, H.
The pH-sensing properties of silicon nitride were studied with special emphasize on surface oxidation. Simulations of the surface potential and the sensitivity were performed using the site binding...
Design and sensitivity optimization of vibration sensors for tool state monitoring (1999)
Thomas, J.S., Kuhnhold, R., Ryssel, H.
A novel vibration sensor in silicon technology for monitoring the tool state of a lathe was developed. The high acceleration amplitudes of up to 4000 g required a careful design of the piezoresistive...
Thomas, J., Kuhnhold, R., Schnupp, R., Temmel, G., Ryssel, H.
A novel MEMS vibration sensor for high acceleration amplitudes was developed in silicon technology for tool state monitoring. According to the application-specific requirements, the piezoresistive...
Investigation of Cu films by focused ion beam induced deposition using nuclear microprobe (1999)
Park, Y.K., Takai, M., Lehrer, C., Frey, L., Ryssel, H.
The localized Cu deposition on Si by 30 keV Ga+ focused ion beam (FIB) using precursor gas has been investigated by a 300 keV Be2+ nuclear microprobe with a beam spot diameter of 80 nm. The Cu...
Novel process control strategies for 300 mm semiconductor production (1999)
Pfitzner, L., Oechsner, R., Schneider, C., Ryssel, H., Riemer, M., Podewils, M. Von
Semiconductor industry is one of the fastest growing businesses. Integrated circuit production process is becoming more and more challenging as the increase in complexity and in wafer size continues....
Impurity incorporation during beam assisted processing analyzed using nuclear microprobe (1999)
Park, Y.K., Takai, M., Lehrer, C., Frey, L., Ryssel, H.
Impurity incorporation due to localized beam processing by focused ion beams (FIBs) and electron beams (EBs) such as physical sputtering, gas-assisted etching (GAE) using iodine gas and beam-assisted...
Biro, L.P., Szabo, B., Mark, G.I., Gyulai, J., Havancsak, K., Kurti, J., ...
Scanning tunneling microscopy (STM) and atomic force microscopy (AFM) were used to investigate the surface of highly oriented pyrolytic graphite (HOPG) irradiated with 209 MeV Kr or 830 MeV U ions....
Biro, L.P., Mark, G.I., Gyulai, J., Havancszak, K., Lipp, S., Lehrer, C., ...
Carbon nanotubes (CNT) were produced by high energy, heavy ion irradiation (215 MeV Ne, 246 MeV Kr, 156 MeV Xe) of graphite. On samples irradiated with Kr and Xe ions large craters were found by...
Application and cost analysis of scatterometry for integrated metrology (1999)
Benesch, N., Schneider, C., Pfitzner, L., Ryssel, H.
In semiconductor manufacturing there is a great demand for innovations towards higher cost-effectiveness. The increasing use of integrated metrology is one means to improve manufacturing processes...
Equipment and wafer modeling of batch furnaces by neural networks (1999)
Benesch, N., Schneider, C., Lehnert, W., Pfitzner, L., Ryssel, H.
In semiconductor manufacturing there is a great demand for innovations towards higher cost-effectiveness. The increasing employment of advanced control systems for process and equipment control is...
Bauer, A.J., Herden, M., Ryssel, H.
The influence of nitrogen incorporated at the gate oxide interface on the reliability and electrical behavior of MOS capacitors was investigated. Incorporation of nitrogen was accomplished either by...
Burenkov, A., Tietzel, K., Lorenz, J., Ryssel, H., Schwalke, U.
A suppression of the narrow channel effect for deep sub-micron CMOS transistors when using a novel device architecture called EXTIGATE has recently been shown. This work compares the narrow channel...
A computationally efficient method for three-dimensional simulation of ion implantation (1999)
Burenkov, A., Tietzel, K., Hössinger, A., Lorenz, J., Ryssel, H., Selberherr, S.
A new method for an accurate and CPU time efficient three-dimensional simulation of ion implantation is suggested in this work. The method is based on a combination of the algorithmic capabilities of...
Simulation of a Coating Protection for an In Situ Ellipsometer in a CVD Furnace (1999)
Poscher, S., Lehnert, W., Ryssel, H.
We investigated an ellipsometer integrated in a chemical vapor deposition furnace as an in situ layer thickness sensor. The laser beam of the ellipsometer is guided by prism-based optics into the...
Nondestructive analytical tools (eg., spectral ellipsometry, thermal wave analysis, atomic force analysis, etc.) have been used to characterize thin titanium silicide films. The parameters of...
Stiebel, D., Pichler, P., Ryssel, H.
The accurate simulation of the transient enhanced diffusion (TED) of dopants during the post-implantation anneal is still a big challenge for process simulation. As a point-defect mediated process,...
On the influence of boron-interstitial complexes on transient enhanced diffusion (1999)
Stiebel, D., Pichler, P., Ryssel, H.
We present new experimental results on the transient enhanced diffusion (TED) of boron after ion implantation. The investigation is focussed on effects that influence TED of shallow profiles in the...
Poscher, S., Wellner, S., Ryssel, H.
Die Temperaturverteilung in einem Schichtabscheideofen fuer Silicumscheiben wurde untersucht. Dazu wurden Simulationen mit dem Programm Phoenics-CVD und Messungen mit Thermoelementdrahtpaaren...
Wittl, J., Burenkov, A., Tietzel, K., Müller, A., Lorenz, J., Ryssel, H.
Coupled process and device simulation was applied for the optimization of sub-quarter-micron CMOS technology. Optimum conditions for critical ion implantation steps were found. Especially it was...
Thin stoichiometric silicon nitride prepared by r.f. reactive sputtering (1999)
Qian, F., Temmel, G., Schnupp, R., Ryssel, H.
Thin silicon nitride films were prepared on silicon wafers at deposition rates of 4nm/min by r.f. reactive sputtering. Various mechanical, chemical and optical properties were investigated as a...
Presence Monitoring Using Thermopile-Arrays (1999)
Ghanem, W., Schnupp, R., Ryssel, H.
A human information and people-counting sensor using an integrated matrix array of thermopile infrared sensors with an appropriate optical system was developed and fabricated. It was designed for the...
Ionenquelle fuer eine Ionenstrahlanlage (1999)
The ion source (900) is positioned with an optical unit (102) to directions on to a specimen surface (104). The ion source has an anode (106) coupled to ground and a cathode (108) coupled to a high...
Improving the Resolution of a Compact Ozone Photometer (1999)
Qian, F., Schnupp, R., Ryssel, H.
To meet the increasing requirement to monitor the temporal and spatial change of ozone concentration in the atmosphere, efforts have been made to develop a portable and simple compact ozone...
Ryssel, H., Pfitzner, L., Trunk, R.
The subject of the Productronica Workshop ¯Semiconductor Equipment and Materials® in Munich 1997 was contamination control and defect reduction. They are one of the key issues of semiconductor...
Bär, E., Lorenz, J., Ryssel, H.
Replacing in part experimental investigations by performing computer simulations helps saving time and costs in semiconductor manufacturing.In this work, we conducted a model calibration for...
Three-dimensional simulation of layer deposition (1998)
Bär, E., Lorenz, J., Ryssel, H.
A program for the three-dimensional (3D) simulation of layer depositionhas been developed. It is based on physical models for the description ofthe specific processes, and uses a triangular surface...
Thin carbon films as elctrodes for bioelectronic applications (1998)
Schnupp, R., Kühnhold, R., Temmel, G., Burte, E., Ryssel, H.
Thin film diamond-like carbon (DLC) electrodes were fabricated by radio frequency (RF) magnetron sputtering on silicon, silicon oxide, and platinum substrates. The dependence of physical and...
Surface disorder production during plasma immersion implantation (1998)
Lohner, T., Khanh, N.Q., Petrik, P., Biro, L.P., Fried, M., Pinter, I., ...
Reliability of metal-oxide-semiconductor capacitors on nitrogen implanted 4 H-silicon carbide (1998)
Treu, M., Burte, E.P., Schörner, R., Friedrichs, P., Stephani, D., Ryssel, H.
4H-SiC epitaxial layers were implanted with nitrogen up to doses of 1x1015 cm-2 and annealed at different temperatures. Atomic force microscopy revealed that the roughness of the SiC surface...
Optimization of critical ion implantation steps in 0.18 mu m CMOS technology (1998)
Burenkov, A., Wittl, J., Schwalke, U., Lorenz, J., Ryssel, H.
Kal, S., Kasko, I., Ryssel, H.
Spectroscopic ellipsometry has gained increasing attention in semiconductor process control because the technique is nondestructive and noncontacting. This paper demonstrates the capability of...
Benesch, N., Hofmann, U., Schneider, C., Ryssel, H.
Due to rising costs and the call for innovations control technology in semiconductor equipment gains in importance. Compared to PID-control systems which have been most frequently deployed in...
Monte-Carlo simulation of silicon amorphization during ion implantation (1998)
Bohmayr, W., Burenkov, A., Lorenz, J., Ryssel, H., Selberherr, S.
Influence of RTP on Vacancy Concentrations (1998)
Jacob, M., Pichler, P., Wohs, M., Ryssel, H., Falster, R.
The increase and reduction of the vacancy concentration by rapid thermal processing (RTP) was investigated by platinum diffusion. Direct experimental evidence is presented for the consumption of...
In situ spectroscopic ellipsometry for advanced process control in vertical furnaces (1998)
Lehnert, W., Berger, R., Schneider, C., Pfitzner, L., Ryssel, H., Stehle, J.L., ...
For the first time, a spectroscopic ellipsometer (SE) has been integrated into a vertical furnace to use it as an in situ layer thickness sensor. An SE was selected because of its high accuracy and...
In situ layer characterization by spectroscopic ellipsometry at high temperatures (1998)
Lehnert, W., Petrik, P., Schneider, C., Pfitzner, L., Ryssel, H.
Bär, E., Lorenz, J., Ryssel, H.
A simulator for the three-dimensional (3D) simulation of layer deposition has been developed. It allows the prediction of the shape of layers deposited on structured substrates. In this paper,...
Petrik, P., Biro, L.P., Fried, M., Lohner, T., Berger, R., Schneider, C., ...
Polysilicon layers prepared by low-pressure chemical vapor deposition at 560 deg C, 620 deg C, 660 deg C, and 700 deg C were measured by Atomic Force Microscopy (AFM) and Spectroscopic Ellipsometry...
A compact ozone measurement system (1998)
Qian, F., Jin, G.R., Schnupp, R., Temmel, G., Ryssel, H.
The importance of monitoring temporal and spatial changes of ozone concentration in the stratosphere and in the ambient air has been clearly recognised. The effort to develop a portable and simple...
Atomistic analysis of the vacancy mechanism of impurity diffusion in silicon (1998)
The complete set of the four macroscopic transport coefficients describing the coupled diffusion of impurity atoms and vacancies in silicon is calculated from the atomistic mechanism by accurately...
AFM surface investigation of polyethylene modified by ion bombardment (1998)
Svorcik, V., Arenholz, E., Hnatowicz, V., Rybka, V., Öchsner, R., Ryssel, H.
Three-dimensional simulation of ion implantation (1997)
Lorenz, J., Tietzel, K., Burenkov, A., Ryssel, H.
With shrinking dimensions and growing complexity of advanced ULSI devices three-dimensional effects are becoming more and more important for their development and optimization. For this reason,...
Bär, E., Lorenz, J., Ryssel, H.
Three-dimensional (3D) simulations of conventional and collimated sputter deposition of titanium into contact holes with high aspect ratios have been carried out using a 3D topography simulator. In...
Bär, E., Lorenz, J., Ryssel, H.
A three-dimensional (M) simulation program has been developed which is capable of simulating layer deposition on 3D geometries. In this paper we present the application of the tool to the simulation...
Observation of vacancy enhancement during rapid thermal annealing in nitrogen (1997)
Jacob, M., Pichler, P., Ryssel, H., Falster, R., Cornara, M., Gambaro, D., ...
Nitridation of bare silicon surfaces in ammonia ambients is known to introduce vacancies into silicon. It is known that nitride films may form also during annealing in nitrogen ambients. Within the...
Kasko, I., Oechsner, R., Schneider, C., Pfitzner, L., Ryssel, H., Trubitsyn, A.A., ...
A novel XPS system was developed and used for in-line control of silicon wafer cleaning. Unlike the conventional XPS systems where the electron energy analyzer and x-ray source are mounted on...
Biro, L.P., Gyulai, J., Havancsak, K., Didyk, A.Y., Bogen, S., Frey, L., ...
Si was irradiated with 209 MeV Kr ions on an (010) oriented surface. Then atomic force microscopy (AFM) was used to measure the roughness on the adjacent (100) plane (the original wafer surface). The...
Monte-Carlo simulation of silicon amorphization during ion implantation (1997)
Bohmayr, W., Burenkov, A., Lorenz, J., Ryssel, H., Selberherr, S.
Monitoring strategies for yield enhancement (1997)
Pfitzner, L., Oechsner, R., Scheider, C., Ryssel, H., Riemer, M., Treiber, T., ...
Semiconductor manufacturing is driven by the necessity to increase productivity. Higher productivity can be achieved by an increase in throughput, by an increase in yield per wafer, by improvements...
Modular metrology tools for productivity enhancement in wafer fabs (1997)
Schneider, C., Pfitzner, L., Ryssel, H.
Integrated metrology helps to reduce costs by decreasing the number of monitor wafers and by reducing the risk of wafer loss. For these reasons, there is an increasing demand for solutions which help...
Metrology and analytics for the optimization of CMP processing (1997)
Huber, A., Erdmann, V., Zielonka, G., Schneider, C., Pfitzner, L., Ryssel, H., ...
The combination of various polishing and machine parameters and their interaction with consumables (e.g. polishing pad, slurry) requires thickens measurements of chemical mechanically polished...
Kinetics of chemical vapor deposition of titanium nitride (1997)
Popovska, N., Poscher, S., Tichy, P., Emig, G., Ryssel, H.
The paper presents the results of the chemical vapor deposition of TiN under reduced pressure using a gas mixture of TICI4, H2 and N2 as a precursor. In order to predict results of CVD experiments on...
Integrated process control for cluster tools using an in-line analytical module (1997)
Kasko, I., Oechsner, R., Froeschle, B., Schneider, C., Pfitzner, L., Ryssel, H.
The paper describes a novel analytical module for in-line process control in cluster tools. Having standardized mechanical and control interfaces (SEMI MESC/CTMC), the module can be easily attached...
Jacob, M., Pichler, P., Ryssel, H., Falster, R.
Diffusion of platinum at low temperatures is a convenient way to characterize vacancy profiles in silicon. This article summarizes the experiments performed to find a standard procedure, discusses...
Degradation of polymide by implantation with Ar+ ions (1997)
Svorcik, V., Rybka, V., Hnatowicz, V., Mieek, I., Jankovkij, O., Öchsner, R., ...
Bauer, A.J., Burte, E.P., Ryssel, H.
In this study, a stable process for fabrication of dielectric dual layers consisting of a low pressure thermal oxide layer and a deposited nitride layer for gate dielectric applications was...
Characterization of thin TiSi2 films by spectroscopic ellipsometry and thermal wave analysis (1997)
Kasko, I., Kal, S., Ryssel, H.
Thin TiSi2 films were prepared using conventional and advanced technological processing schemes. The formation of silicide films was monitored by a number of analytical techniques including 4-point...
Bär, E., Lorenz, J., Ryssel, H.
A 3D simulation program has been developed which is capable of simulating layer deposition on 3D topography features such as high aspect ratio contact holes. In this paper we investigate the sputter...
Bär, E., Lorenz, J., Ryssel, H.
A 3D simulation program has been developed which is capable of simulating layer deposition on 3D topography features such as high aspect ratio contact holes. In this paper we investigate the sputter...
3D simulation for sub-micron metallization (1997)
Bär, E., Lorenz, J., Ryssel, H.
A program for the three-dimensional (3D) simulation of layer deposition processes has been developed. A triangular discretization of the device geometry is used in combination with a particle...
Three-dimensional simulation of ion implantation (1996)
Tietzel, K., Burenkov, A., Lorenz, J., Ryssel, H.
With shrinking dimensions and growing complexity of advanced ULSI devices three-dimensional effects are becoming more and more important for their development and optimization. For this reason,...
Lipp, S., Frey, L., Lehrer, C., Frank, B., Demm, E., Pauthner, S., ...
Focused ion beams are intensively used for device modification by local material removal and ion beam induced metal deposition. With shrinking dimensions on modern multilayer devices, the need for...
Bauer, A.J., Burte, E.P., Ryssel, H.
In this study, a stable process for fabrication of dielectric dual layers consisting of a low pressure thermal oxide layer and a deposited nitride layer for gate dielectric applications was...
Advanced process control system for vertical furnaces (1996)
Berger, R., Schneider, C., Lehnert, W., Pfitzner, L., Ryssel, H.
A new determination method of very low Fe contamination by UFS (1995)
Lu, Dian-Tong, Qingcheng, Zheng, Mitchell, Ian V., Hemment, P. L. F., Ryssel, H.
We have produced very low Fe-dose (108-109 Fe/cm2) implanted Si samples. A new method of Ultraviolet Fluorescence Spectra (UFS) measurements has been used to determine the contents of Fe on the...
Ultrasonic transducer with silicon. A well known material with new applications (1995)
Paneva, R., Temmel, G., Ryssel, H.
The vibrations of piezoelectric driven (ZnO) thin silicon membranes up to 200 kHz are studied. Non-linear vibrations with amplitudes of several micrometers for subharmonic frequency produce...
Trajectory split method for Monte-Carlo simulation of ion implantation (1995)
Bohmayr, W., Burenkov, A., Lorenz, J., Ryssel, H., Selberherr, S.
Strain profiles in phosphorus implanted /100/-silicon (1995)
Remmler, M., Frey, L., Horvath, Z.E., Ryssel, H.
Ion implantation induced strain in silicon was measured by high resolution X-ray diffractometry. [l00] oriented Si wafers were implanted with 80 keV P ions at doses below and above the amorphization...
Bogen, S., Frey, L., Herder, M., Ryssel, H.
Oxygen or carbon were implanted at an energy of 5 and 4 MeV into n- and p-type (100) Si. The implantation dose was 5.x10(15) square centimetre. Characterization of the recombination layers was...
Platinum diffusion at low temperatures (1995)
Jacob, M., Pichler, P., Ryssel, H., Falster, R.
In a series of experiments, the diffusion of platinum in silicon was investigated at low temperatures in the range from 700 deg. C to 800 deg. C. Depth profiles measured in as-grown float zone (FZ)...
Phosphourus-enhanced diffusion of antimony due to generation of self-interstitials (1995)
Pichler, P., Ryssel, H., Ploß, R., Bonafos, C., Claverie, A.
In a series of experiments, the influence of phosphorus diffusion at high concentrations on the diffusion of an antimony marker layer was investigated. The marker layer was separated from the surface...
Nitrogen implanted etch-stop layers in silicon (1995)
Paneva, R., Temmel, G., Ryssel, H., Burte, E.P.
The aim of this work is to investigate the possibility to produce an etch-stop layer in silicon through nitrogen ion implantation. The etching process is influenced by nitrogen concentrations in...
Bauer, H., Pichler, P., Ryssel, H.
The time dependent deactivation of RTA-activated arsenic-doped samples was studied for chemical concentrations from 2.1020 cm-3 to 1.1021 cm-3 in the temperature range from 700 degrees C to 900...
Local material removal by focused ion beam milling and etching (1995)
Lipp, K., Frey, L., Franz, G., Demm, E., Petersen, S., Ryssel, H.
Focused ion beams (FIB) have drawn considerable interest as a tool for micromachining in the sub-micrometer regime with major applications in failure analysis and circuit repair. With shrinking...
Local material removal by focused ion beam milling and etching (1995)
Lipp, S., Frey, L., Franz, G., Demm, E., Petersen, S., Ryssel, H.
Focused ion beam (FIB) have drawn considerable interest as a tool for micromachining in the sub-micrometer regime with major applications in failure analysis and circuit repair. With shrinking...
Improved delineation technique for two dimensional dopant profiling (1995)
Gong, L., Petersen, S., Frey, L., Ryssel, H.
A chemical delineation technique suitable for two dimensional dopant profiling has been investigated and improved. The formation of equi-concentration lines in p-doped areas during chemical etching...
High-dose Ge+ implantation into silicon at elevated substrate temperature (1995)
Chen, N.X., Schork, R., Ryssel, H.
Germanium ions with a dose of 6x10(16) square centimetre and at an energy of 160 keV were implanted into (100) Si wafers at roomtemperature (FIT) and elevated substrate temperatures up to 500 degree....
Gitterdeformation in Silicium nach Implantationen von Phosphor (1995)
Remmler, M., Frey, L., Ryssel, H.
Mit Hilfe eines hochauflösenden Röntgendiffraktometers wurden Proben monokristallinen Siliciums auf implantationsbedingte Gitterdeformation untersucht. Die Proben waren mit Energien von 80 keV, 570...
Determination of vacancy concentration in float zone and Czochralski silicon (1995)
Jacob, M., Pichler, P., Ryssel, H., Gambaro, D., Falster, R.
Lattice vacancies in silicon play an important role in atomistic diffusion theories. They form mobile complexes with substitutional impurities and act as reaction partners for other defects in many...
Comparison of retrograde and conventional p-wells in regard latch-up susceptibility (1995)
Bogen, S., Gong, L., Frey, L., Ryssel, H., Körber, K.
Test structures were designed and processed to investigate the effect of retrogade wells on latch-up susceptibility. A 600 keV boron implanation was used to substitute a conventional 80 keV implant...
Atomistic evalution of diffusion theories for the diffusion of dopants in vacancy gradients (1995)
List, S., Pichler, P., Ryssel, H.
A new approach is used for the calculation of transport coefficients for dopants and vacancies from atomic jump frequencies in the presence of dopant or vacancy gradients. Results are shown for the...
Analytical modeling of lateral implantation profiles (1995)
Lorenz, J., Ryssel, H., Wierzbicki, R.J.
This paper outlines a novel analytical model for the two-dimensional description of ion implantation. Three-dimensional distributions of implanted dopant atoms are calculated using a convolution...
Analytical model for phosphorus large angle tilted implantation (1995)
Burenkov, A., Bohmayr, W., Lorenz, J., Ryssel, H., Selberherr, S.
Analysis of contamination - a must for ultraclean technology (1995)
Ryssel, H., Streckfuß, N., Aderhold, W., Berger, R., Falter, T., Frey, L.
Contamination analysis has become more and more important in recent years. The demands for purity of liquid chemicals, gases, wafers, and processing are increasing from generation to generation....
4 nm gate dielectrics prepared by RTP low pressure oxidation in O2 and N2O atmosphere (1995)
Bauer, A.J., Burte, E.P., Ryssel, H.
For the first time. extensive experimental results are reported about the rapid thermal O2 and N2O oxidation of silicon at low pressure. The decrease of the oxidation rate in N2O is smaller than in...
Applications of single-beam photothermal analysis (1994)
Schork, R., Krügel, S., Schneider, C., Pfitzner, L., Ryssel, H.
Thermal wave techniques have gained increasing attention in semiconductor process control because they are nondestructive and noncontacting. Recently, in-line and in situ implementations have been...
Single crystal growth of Si-Ge alloy by ion implantation and sequential rapid thermal (1994)
Kal, S., Kasko, I., Ryssel, H.
We have shown that a single crystal Si-Ge layer can be formed by high dose high74 Ge ion implantation in silicon and annealing the sample using sequential RTA at a specified temperature and time...
Simulation of buried layer experiments containing all four dopant species (1994)
Ghaderi, K., Hobler, G., Budil, M., Pötzl, H., Pichler, P., Ryssel, H., ...
In this work, we describe a general model for dopant diffusion via dopant-defect pairs assuming local equilibrium for electronic processes, but not for the pairing processes. A series of experiments...
Wierzbicki, R.J., Biersack, J.P., Barthel, A., Lorenz, J., Ryssel, H.
It has been shown the incorporation of ion reflection phenomenon into a multilayer model enables much more accurate prediction of the implantated dopand distributions using analytical methods. The...
Observation of local SIMOX layers by microprobe RBS (1994)
Kinomura, A., Horino, Y., Mokuno, Y., Chayahara, A., Kiuchi, M., Fujii, K., ...
Local SIMOX layers formed by oxygen implantation through an SiO2 mask were analyzed by microprobe RBS with 1.5 MeV helium ions. Lateral and cross-sectional images of Si and O atoms could be...
Takai, M., Katayama, Y., Lohner, T., Kinomura, A., Ryssel, H., Tsien, P.H., ...
A nuclear microprobe combined with Rutherford backscattering (RBS) can be applied to analysis of silicide formation processes and a multi-layered structure. Lateral overgrowth of cobalt silicide...
Kasko, I., Dehm, C., Gyulai, J., Ryssel, H.
We could separate ballistic and thermal effects by ion-beam mixing of Co-Si with As and Ge ions by comparing calculated (T-DYN) and experimental (SIMS) concentration profiles. In case of ion-beam...
Ion-beam induced CoSi2 layers - formation and contact properties. (1994)
Dehm, C., Kasko, I., Ryssel, H.
In this study, the influence of Ge and As ion energy, respectively, on the mixing behavior and the contact properties of the Co-Si system was investigated by Monte-Carlo-simulations, SIMS, RBS, TEM,...
Biro, L.P., Gyulai, J., Bogen, S., Frey, L., Ryssel, H.
SIMS measurements show that PA conditions are able to override differences in diffusion due to damage structure differences originating from 10, 20, 30, 40 keV or 40, 30, 20, 10 keV energy sequences...
Pogrebnjak, A.D., Bakharev, O.G., Martynenko, V.A., Rudenko, V.A., Brusa, R., Zecca, A., ...
The "long range effect", i.e. the formation of a layer with an elevated concentration of defects of non-crystalline structure at depths significantly exceeding the ion ranges (by more than 1-3 orders...
Enhanced diffusion of antimony caused by phosphorus diffusion at high concentrations (1994)
Pichler, P., Ryssel, H., Wallmann, G., Ploß, R.
The influence of high-concentration phosphorus diffusion on an antimony marker layer separated spatially by 4 micrometres epitaxially deposited silicon is described. The phosphorus was implanted into...
Dynamic behavior of arsenic clusters in silicon (1994)
Bauer, H., Pichler, P., Ryssel, H.
A new experimental setup was developed to study the clustering process of arsenic in silicon. It is based on the use of homogeneously doped SOI material which simplified the interpretation of the...
Schork, R., Krügel, S., Schneider, C., Pfitzner, L., Ryssel, H.
It was demonstrated in this paper that thermal wave analysis is capable of measuring two major parameters in the metallization processes of semiconductor manufacturing, metal layer thickness and...
Gong, L., Bogen, S., Frey, L., Jung, W., Ryssel, H.
In this paper, we have compared experimental range data and profiles of high energy implants with theoretical values and profiles predicted by LSS, TRIM and RAMM calculations. In order to simulate...
Applications of single-beam photothermal analysis (1994)
Schork, R., Krügel, S., Schneider, C., Pfitzner, L., Ryssel, H.
Thermal wave techniques have gained increasing attention in semiconductor process control because they are nondestructive and noncontacting. Recently, in-line and in situ implementations have been...
Applications of single-beam photothermal analysis (1994)
Schork, R., Krügel, S., Schneider, C., Pfitzner, L., Ryssel, H.
Thermal wave techniques have gained increasing attention in semiconductor process control because they are nondestructive and noncontacting. Recently, in-line and in situ implementations have been...
Residual stress during local SIMOX process - Raman measurement and simulation (1993)
Seidl, A., Takai, M., Sayama, H., Haramura, K., Ryssel, H., Schork, R., ...
Possible sources of mechanical stress arising during fabrication of local SOI structures were discussed.A finite element package was employed in order to obtain two-dimensional stress profiles.The...
Photon assisted implantation -PAI- (1993)
Biro, L.P., Gyulai, J., Ryssel, H., Frey, L., Kormany, T., Tuan, N.M.
The junction depth reduction for B implanted under PA conditions in Si was investigated.It was found that low energy implantation and short annealing times promote higher values of junction depth...
A novel delineation technique for 2D-profiling of dopants in crystalline silicon (1993)
Gong, L., Frey, L., Bogen, S., Ryssel, H.
An optimized delineation. technique was described.Using this technique, up to three equi-concentration lines can be made visible by one delineation process with high local resolution.The asymmetrical...
Influence of impurities on ion beam induced TiSi2 formation (1993)
Dehm, C., Raum, B., Kasko, I., Ryssel, H.
In this study, the influence of oxygen and arsenic which both have a high affinity to form compounds with titanium on ion beam induced TiSi2 formation was investigated. For this purpose, titanium...
Improvement of surface properties of polymers by ion implantation (1993)
Öchsner, R., Kluge, A., Zechel-Malonn, S., Gong, L., Ryssel, H.
The surface properties of PC, PE-HD, and PMMA after ion implantation were investigated. It resulted in an increase of microhardness, which strongly depends on the implanted ion dose. The...
High energy implantation of high10 B and high11 B into -100- silicon in channel and in random (1993)
Gong, L., Frey, L., Bogen, S., Ryssel, H.
Profiles of boron implants into the (100) direction of silicon and the range straggling for `B were presented.The electronic stopping power was determined and compared to theoretical data.Both,...
Effect of ion-beam mixing temperature on cobalt silicide formation (1993)
Kasko, I., Dehm, C., Frey, L., Ryssel, H.
In this work, the influence of ion-beam mixing at enhanced substrate temperatures on CoSi2 formation was investigated. For this purpose, 19nm Co layers were mixed using 1 x 10 high15 cm high-2, 60...
Diffusion and activation of arsenic implanted at high temperature in silicon (1993)
Yu, Y.H., Schork, R., Pichler, P., Ryssel, H.
The diffusion and the electrical activation of arsenic implanted at high temperatures in silicon have been investigated by XTEM observations, SIMS and differential Hall measurements. By correlating...
Contamination control and ultrasensitive chemical analysis (1993)
Ryssel, H., Frey, L., Streckfuß, N., Schork, R., Kroninger, F., Falter, T.
Requirements for low contamination processing in future device fabrication demand that the cleanliness of equipment and media be qualified and monitored. Advanced analytical methods for elemental...
Atomistic evaluation of diffusion theories for the diffusion of dopants in vacancy gradients (1993)
List, S., Pichler, P., Ryssel, H.
A new approach is used for the calculation of transport coefficients for dopants and vacancies from atomic jump frequencies in the presence of dopant or vacancy gradients. Results are shown for the...
Reduction of friction and wear by ion-implanted carbonized photoresit (1992)
Bogen, S., Gyulai, J., Kluge, A., Öchsner, R., Ryssel, H.
The influence of ion-implanted carbonized photoresist layers (AZ 5210) on wear and friction is discussed in this paper. Photoresist, an organic resin, is used because of the simple coating of the...
The modelling of platinum diffusion in silicon under non-equilibrium conditions (1992)
The diffusion of platinum in silicon is described by the kick-out and by the dissociative mechanism. The resulting set of four coupled differential equations is solved numerically without any...
An investigation of vacancy concentrations in bulk silicon (1992)
A method will be presented, which allows the quantitative determination of distributions of single vacancies in bulk silicon. The method uses deep level transient spectroscopy (DLTS) measurements of...
Interaction between Co and SiO2 during ion-beam mixing and rapid thermal annealing (1992)
Dehm, C., Kasko, I., Burte, E.P., Ryssel, H.
For the application in self-aligned processes, it was supposed that CoSi2 could be superior to TiSi2, since, unlike Ti, a reaction between Co and SiO2 was not observed up to now. We studied the...
Influence of low-dose ion-beam mixing on CoSi2 formation (1992)
Kasko, I., Dehm, C., Ryssel, H.
In this study, the critical dose for ion-beam mixing of Co and Si with Ge ions which results in homogenous CoSi2 formation after rapid thermal annealing was found. For this purpose, Co was deposited...
High energy ion implantation for semiconductor application at Fraunhofer-AIS, Erlangen (1992)
Frey, L., Bogen, S., Gong, L., Jung, W., Gyulai, J., Ryssel, H.
A new high energy ion implanter for research and development in semiconductor technology was put into operation at the Fraunhofer Institute in Erlangen. The system is used for generation of ion beams...
The study of gold and platinum diffusion is found to allow the separate observation of the intrinsic point defects, i.e., of silicon self-interstitials and of vacancies. The diffusion of gold i float...
Klauser, T., Pichler, P., Ryssel, H., Schork, R.
In recent years, ion implantation has become one of the key techniques in semiconductor fabrication. The annealing of the damage produced during implantation is, however, not fully understood. Ion...
Ellipsometer zur in-situ-Schichtdickenmessung (1992)
Berger, R., Ryssel, H., Schneider, C., Aderhold, W.
An ellipsometer, which is in particular destined for the measurement of the oxide layer thickness on silicon wafers inside a furnace, comprises an analyzing unit, a beam bending device, a paddle and...
The effect of ion implantation on the lifetime of punches (1992)
Öchsner, R., Kluge, A., Ryssel, H., Stepper, M., Straede, C., Politiek, J.
In order to increase the lifetime of punches, made of Vasco Wear steel, implantations with C, N, B, Ti and co-implantation with Ti and C were performed at energies from 50 keV to 200 keV and 600 keV...
The effect of ion implantation on the lifetime of punches (1992)
Öchsner, R., Kluge, A., Ryssel, H., Stepper, M., Straede, C., Politiek, J.
Direct experimental evidence for diffusion of dopants via pairs with intrinsic point defects (1992)
Klauser, T., Pichler, P., Ryssel, H., Schork, R.
Boron was implanted into silicon at a wafer temperature of 950degreeC. The resulting boron profile showed a marked uphill diffusion at the surface and a very high diffusion enhancement. Initially...
Characterization of metal impurities in silicon-on-insulator material (1992)
Frey, L., Kroninger, F., Streckfuß, N., Ryssel, H.
Metal impurities in silicon-on-insulator material were characterized by total-reflection X-ray fluorescence spectroscopy (TXRFS). Wafers from different suppliers were analyzed. Surface concentrations...
Radiation-enhanced diffusion during high-temperature ion implantation (1991)
Schork, R., Kluge, A., Pichler, P., Ryssel, H.
To investigate the influence of elevated temperatures during ion implantation on the resulting profile shapes of implanted ions and generated defects, our Varian 350D implanter has been equipped with...
Observation of inverse u-shaped profiles after platinum diffusion in silicon (1991)
Inverse U-shaped profiles of platinum in silicon were obtained after diffusion at 700degreeC. Deep level transient spectroscopy was used to determine the platinum concentrations in various depths of...
Oblique ion implantation into nonplanar targets (1991)
Takai, M., Namba, S., Ryssel, H.
A two-dimensional Monte Carlo simulation code has been applied to trench implantation as a function of incident angle to investigate the influence of tapered sidewalls in Si trenches on doping...
Takai, M., Kato, K., Namba, S., Pfannenmüller, U., Ryssel, H.
Poly-Si layers were deposited on thermal oxides of Si at various temperatures from 560 to 700 degree C. Arsenic was implanted at 100 keV to a dose of 1 X 10high16 cmhighminus2 in poly-Si layers,...
Carrier concentration profiles by high-energy boron ion implantation into silicon (1991)
Sayama, H., Takai, M., Namba, S., Ryssel, H.
P-type carrier concentration profiles, formed by high- energy boron ion implantation at 400 and 700 keV into p-type silicon followed by subsequent annealing, have been investigated by C- V...
Sicherheit bei Halbleiterfertigungsgeräten (1990)
Streckfuß, N., Pfitzner, L., Ryssel, H., Ryzlewicz, C.
Sicherheit ist ein heute recht oft verwendetes Schlagwort. Häufig versteht man darunter, je nach Standpunkt, etwas ganz anderes. Bei Halbleiterfertigungsgeräten kann man "Sicherheit" im...
Untersuchungen über Regelparameter in einer Lithographiezelle (1990)
Pfitzner, L., Ryssel, H., Temmel, G., Zielonka, G.
Lithography clusters with on-line processing will be used for critical exposure steps. Spin coating optimization for ultraplanarized single/multi -layer resists are, therefore, a prerequisit for...
Trends in practical process simulation. (1990)
Process simulation has shown to be an important tool for the development in the fields of ULSI and power devices. The reason for this is that the traditional experimental method to optimize devices...
Simulation of silicon semiconductor processing (1990)
In VLSI development process simulation is needed to understand the interaction between successive process steps and to give input data for device simulation. The goal of this paper is to sketch the...
Meßtechnik und Analytik für Halbleiterfertigungsgeräte (1990)
Eichinger, P., Pfitzner, L., Ryssel, H., Schneider, C.
Future generations of semiconductor devices require lower tolerances in manufacturing and, therefore, improved epuipment with in situ and on-line measurement and control systems for improved process...
A versatile ion implanter for material modification (1989)
Kluge, A., Öchsner, R., Ryssel, H.
Based on our experiences with an implanter for metal modification we designed and built a multi-purpose implanter for surface modification of polymers, ceramics, and metals. The target chamber has a...
Two-dimensional simulation of ion implantation profiles using a personal computer (1989)
Barthel, A., Lorenz, J., Ryssel, H.
A new sofware tool was developed which allows a simulation of two-dimensional ion implantation profiles using a personal computer within a few minutes of computing time. This program, COMPLAN, uses...
Simulation of the lateral spread of implanted ions - experiments (1989)
Gong, L., Barthel, A., Lorenz, J., Ryssel, H.
For the measurement of dopant concentrations in two dimensions (2d), a delineation technique has been optimized. The method yields up to three dopant equiconcentration lines in one sample. The...
Simulation halbleitertechnologischer Prozess-Schritte in der Mikroelektronik (1989)
Lorenz, J., Pelka, J., Ryssel, H.
During the last few years, process simulation has become a valuable tool for the optimization of semiconductor fabrication technologies. In this paper, some models, measurement methods and algorithms...
Prozeßtechnische Aspekte fortschrittlicher Halbleiterfertigungsgeräte (1989)
Pfitzner, L., Ryssel, H., Schmutz, W.
Für die moderne Mikroelektronik ist die Frage der optimalen Fertigungsverfahren in vieler Hinsicht noch ungelöst. Mit der Entwicklung der nächsten IC-Generationen wie dem 16-Mbit- und dem...
Programs for VLSI process simulation (1989)
Pichler, P., Lorenz, J., Pelka, J., Ryssel, H.
In contrast to the early times of simulation where the tools were dedicated either to the simulation of the doping processes ion implantation, diffusion and oxidation in ld, or of changes in...
One- and two-dimensional process simulation with ICECREM and COMPLAN. (1989)
Pichler, P., Dürr, R., Holzer, N., Schott, K., Barthel, A., Lorenz, J., ...
Numerical simulation of processes has shown to be an important tool for development in the fields of VLSI and power devices. To satisfy the particular needs, ICECREM has been developed as...
Ion implantation in single-crystal magnetic ferrite. (1989)
Takai, M., Lu, Y.F., Minamisono, T., Namba, S., Ryssel, H.
Single crystalline magnetic ferrite was implanted with nitrogen ions at 180 keV to investigate recrystallization behavior by post annealing at temperatures from 700 to 900 degree C. The...
Ion-beam mixed MoSi2 layers - formation and contract properties (1989)
Dehm, C., Gyulai, J., Ryssel, H., Valyi, G.
Diodes with high conductivity Molybdenum-silicide-contacts were fabricated using self-aligned silicide technology and ion-beam mixing for silicidation. For optimizing contact properties, different...
International process control and automation for semiconductor manufacturing equipment (1989)
Pfitzner, L., Ryssel, H., Schneider, C.
Tighter tolerances in semiconductor manufacturing require reproducible processes. One of the most important steps towards improved processes is the integration of control and measurement systems into...
Internal process control and automation for semiconductor manufacturing equipment (1989)
Pfitzner, L., Ryssel, H., Schneider, C.
Increasing complexity of integrated circuits, shrinking geometries, and a larger number of critical processing steps require tighter tolerances of the process steps in semiconductor production....
Improvements in simulation at 2d implantation profiles (1989)
Gong, L., Lorenz, J., Ryssel, H.
Shrinking device dimensions require the reduction of high temperature steps or their replacement by RTA. Therefore, an accurate knowledge of implanted dopant profiles becomes more and more important....
A flexible target chamber for a Varian 350 DF implanter (1989)
Kluge, A., Ryssel, H., Schork, R.
The Varian 350 DF has a dual end station. One of these stations can be equipped with an experimental implantation chamber allowing implants of up to 100 mm wafers. In order to allow for more flexible...
Temmel, G., Zielonka, G., Olbrich, H., Mann, R., Pfitzner, L., Ryssel, H.
Spin coating and development processes are a sequence of different process steps (cleaning, priming, spin coating, softbake, post exposure bake, developing, hardbake and cooling). Wafer tracks offer...
Chemical and physical processes during the formation of MoSi2 by ion-beam mixing (1989)
Möller, W., Ryssel, H., Valyi, G.
The formation mechanism of MoSi2 layers fabricated by implanting arsenic ions through 40-70nm of molybdenum into silicon was studied. The implantation parameters were varied (dose 5x10 high 14 to 3 x...
Langguth, K., Kobs, K., Kluge, A., Öchsner, R., Ryssel, H.
Implantations of nitrogen, boron, carbon, silver, lead and tin in 4 different steels with chromium content of 1,5 - 18 % were performed. The doses applied were between 10 high 17 and 5 x 10 high 17...
Langguth, K., Kobs, K., Kluge, A., Öchsner, R., Ryssel, H.
Different steels with chromium contents between 1,5 and 18 % were implanted with nitrogen, boron, carbon, silver, lead, and thin using doses between 10 high 17 and 4 x 10 high 17 cm high minus 2. It...
Safety consideration for ion implanters. (1988)
Ion implantation has become the most important doping technique for semiconductor devices in recent years. Ion implanters have changed from complicated experimental equipment to computer-controlled,...
Safety aspects of ion implantation. (1988)
Ion implantation has become the most important doping technique for semiconductor devices in recent years. Ion implanters have changed from complicated experimental equipment to computer-controlled,...
Dehm, C., Möller, W., Ryssel, H., Valyi, G.
MoSi2 layers were fabricated by ion-beam mixing and subsequent annealing. The mixing was performed by arsenic ion, which is advantageous because the same process step can be used for silicidation and...
CW argon-laser induced zone-melting recrystallization of thin silicon on oxide. (1988)
Ryssel, H., Götzlich, J., Steinberger, H., Qiuxia, X
Silicon on insulator (SOI) technologies offer significant possibilities for high-speed and high-density integrated circuit applications. Single-crystal silicon islands of 50 mym width and 165 mym...
Aderhold, W., Frühauf, W., Herz, R., Kahlden, T. Von, Pfitzner, L., Ryssel, H., ...
In dieser Studie wird der Stand der Technik bei der Halbleiterherstellung aus prozesstechnischer und fertigungstechnischer Sicht dargestellt und erstmals unter fertigungstechnischen Gesichtspunkten...
Monte Carlo ion implantation and COMPOSITE (1987)
Lorenz, J., Ryssel, H., Barthel, A.
Analytical methods for the description of ion implantation show good agreement with experiment and Monte-Carlo simulations in most cases. Problems arise with special geometrics such as trenches. To...
Ion implantation into non-planar targets - Monto Carlo simulations and analytical models (1987)
Krueger, W., Lorenz, J., Ryssel, H.
Analytical calculations of two-dimensional implantation profiles taking into account the different stopping powers in mask and substrate are compared to Monte Carlo simulations. It is shown that a...
Valyi, G., Ryssel, H., Möller, W.
Layers of MoSi2 were fabricated by implanting arsenic ions through Mo films on Si and subsequent annealing. Ion-beam mixing caused by the implantation is indispensable for the formation of the...
Enhanced endurance life of sputtered MoSX filsm on steel by ion beam mixing. (1987)
Kobs, H., Dimigen, H., Hübsch, H., Tolle, H.J., Leutenbecker, R., Ryssel, H.
R.f.sputter-deposited MoS(x) films (x=1.6-1.9) show excellent lubrication properties. The coefficient of friction under sliding conditions in an inert gas or in vacuum is very low (0.02-0.03) but the...
Krueger, W., Lorenz, J., Ryssel, H.
In this paper, a new analytical model for the description of lateral spread of implanted ions is compared to Monte Carlo simulations and to the older model by Ishiwara et al. To account for different...
Neue Technologien fuer hoechstintegrierte Schaltkreise (1986)
Die diskutierten vollisolierten Schaltkreise ermoeglichen im Vergleich zu derzeitigen Schaltkreisen erhoehte Packungsdichten und Schaltgeschwindigkeiten bei vollstaendigem Vermeiden des latch...
Models for implantation into multilayer targets (1986)
Ryssel, H., Lorenz, J., Hoffmann, K.
Models for the description of implantation profiles in multilayer targets are compared. It is found that all analytical models have severe limitations if the different layers possess very different...
Mikroelektronik und Reinraumtechnik (1986)
In diesem Beitrag wird der Einfluss der Reinraumtechnik auf die Ausbeute bei der Fertigung von Halbleiterbauelementen besprochen, und die Anforderungen an die Reinraumtechnik aus der Sicht der...
Ion implantation models for process simulation. Chapter 2 (1986)
Ion implantation is the most important doping technique for VLSI circuits. In this contribution, models describing implantation profiles in a manner suitable for process simulation, as well as...
Improved tribilogical properties of sputtered MoSx films by ion beam mixing (1986)
Kobs, K., Dimigen, H., Huebsch, H., Tolle, H.J., Leutenecker, R., Ryssel, H.
In beam mixing yielded a distinct enhancement in the sliding life of sputtered MoS sub x films without any deterioration of the excellent lubrication properties. This effect occurs only at higher ion...
Anforderungen an den Reinraum aus der Sicht der Halbleitertechnologie (1986)
Es wurde aufgezeigt, wie Reinraeume fuer die Halbleitertechnologie prinzipiell gestaltet sind und welche Zusatzbedingungen prozessbedingter Art zu erfuellen sind. Je nach gefertigtem...
COMPOSITE - A complete modelling program of silicon technology (1985)
Pelka, J., Lorenz, J., Ryssel, H., Sachs, A., Seidl, S., Svoboda, M.
Studies on the lattice position of boron in silicon (1983)
Fink, D., Carstanjen, H.D., Jahnel, F., Muller, K., Ryssel, H., Osei, A., ...
Nd-YAG laser annealing of gallium-implanted silicon. (1981)
Takai, M., Tsou, S.C., Tsien, P.H., Roeschenthaler, D., Ryssel, H.
Arsenic implanted polysilicon layers. (1981)
Ryssel, H., Bleier, M., Prinke, G., Haberger, K., Kranz, H., Iberl, F.