I. Miotkowski

Details der Publikationsliste

Zeitraum

2001 - 2009

Anzahl

32

Co-Autoren

Lyman spectra of holes bound to Cu, Ag, and Au acceptors in ZnTe and CdTe (2009)

Chen, Gang, Miotkowski, I., Ramdas, A. K.

The group IB impurities (Cu, Ag, and Au) incorporated into II-VI zinc blende hosts of ZnTe and CdTe exhibit well resolved excitation lines followed by a photoionization continuum in their infrared...

Coherent stokes Raman spectroscopy of conduction electron spin flip transitions in Cd1-xFexTe: A Van Vleck paramagnet (2008)

Winter, A., Pascher, H., Krenn, H., Miotkowski, I., Ramdas, A. K.

The conduction-band spin splitting in Cd1-xFexTe bulk crystals is delineated on the basis of the Raman transitions manifested in coherent Stokes Raman scattering (CSRS). The independence at low...

Nonlinear magnetization behavior near the spin-glass transition in the layered III-VI diluted magnetic semiconductor Ga1-xMnxS (2007)

Pekarek, T. M., Watson, E. M., Garner, J., Shand, P. M., Miotkowski, I., Ramdas, A. K.

Magnetic properties of single crystalline Ga1-xMnxS (x=0.09) have been measured near the spin-glass transition. No other III-VI DMS is currently known to exhibit a spin-glass transition for...

Control of defect structure in compound semiconductors with stoichiometry: Oxygen in CdTe (2007)

Chen, G., Miotkowski, I., Rodriguez, S., Ramdas, A. K.

Two types of localized vibrational modes of oxygen substituting for Te in CdTe, i.e., O-Te, are reported. In one, O-Te is associated with a nearest neighbor (NN) vacancy as a (O-Te-V-Cd) center and...

Raman electron paramagnetic resonance in Zn1-xCrxTe and Cd1-xCrxTe (2007)

Lu, X., Tsoi, S., Miotkowski, I., Rodriguez, S., Ramdas, A. K., Alawadhi, H.

Raman electron paramagnetic resonance (Raman-EPR) of the transitions due to the spin flip of the 3d electrons of Cr+ in Zn1-xCrxTe and Cd1-xCrxTe is observed at h omega(PM)=g(Cr+)mu B-B with...

Thermal hysteresis in the magnetization of the layered III-VI diluted magnetic semiconductor In1-xMnxSe (2006)

Pekarek, T. M., Ranger, L. H., Miotkowski, I., Ramdas, A. K.

Magnetic properties of single-crystalline In1-xMnxSe (x=0.10) have been measured. A prominent thermal hysteresis in the magnetization is observed between 90 and 290 K. The magnetization is reversible...

Explorations of the magnetization of Ga1-xMnxS over a wide range of concentrations, 0.008 < x < 0.18 (2006)

Tracy, J. L., Mourad, R., Garner, J., Pekarek, T. M., Miotkowski, I., Ramdas, A. K.

Calculations and measurements of the magnetization of Ga1-xMnxS, a III-VI diluted magnetic semiconductor crystal, are reported. Results extend over a wide range of concentrations: x=0.18, 0.13,...

Stoichiometry driven impurity configurations in compound semiconductors (2006)

Chen, G., Miotkowski, I., Rodriguez, S., Ramdas, A. K.

Precise stoichiometry and departures therefrom in the composition of the tetrahedrally coordinated compound semiconductors allow impurity incorporation in more than one configuration. Ultrahigh...

Stoichiometry driven impurity configurations in compound semiconductors (2006)

Chen, G., Miotkowski, I., Rodriguez, S., Ramdas, A. K.

Precise stoichiometry and departures therefrom in the composition of the tetrahedrally coordinated compound semiconductors allow impurity incorporation in more than one configuration. Ultrahigh...

Thermal hysteresis in the magnetization of the layered III-VI diluted magnetic semiconductor In1-xMnxSe (2006)

Pekarek, T. M., Ranger, L. H., Miotkowski, I., Ramdas, A. K.

Magnetic properties of single-crystalline In1-xMnxSe (x=0.10) have been measured. A prominent thermal hysteresis in the magnetization is observed between 90 and 290 K. The magnetization is reversible...

Explorations of the magnetization of Ga1-xMnxS over a wide range of concentrations, 0.008 < x < 0.18 (2006)

Tracy, J. L., Mourad, R., Garner, J., Pekarek, T. M., Miotkowski, I., Ramdas, A. K.

Calculations and measurements of the magnetization of Ga1-xMnxS, a III-VI diluted magnetic semiconductor crystal, are reported. Results extend over a wide range of concentrations: x=0.18, 0.13,...

Explorations of the magnetization of Ga1-xMnxS over a wide range of concentrations, 0.008 < x < 0.18 (2006)

Tracy, J. L., Mourad, R., Garner, J., Pekarek, T. M., Miotkowski, I., Ramdas, A. K.

Calculations and measurements of the magnetization of Ga1-xMnxS, a III-VI diluted magnetic semiconductor crystal, are reported. Results extend over a wide range of concentrations: x=0.18, 0.13,...

Thermal hysteresis in the magnetization of the layered III-VI diluted magnetic semiconductor In1-xMnxSe (2006)

Pekarek, T. M., Ranger, L. H., Miotkowski, I., Ramdas, A. K.

Magnetic properties of single-crystalline In1-xMnxSe (x=0.10) have been measured. A prominent thermal hysteresis in the magnetization is observed between 90 and 290 K. The magnetization is reversible...

Resonant electronic raman scattering in a Van Vleck II-VI diluted magnetic semiconductor: Cd1-xFexTe (2005)

Tsoi, S., Miotkowski, I., Rodriguez, S., Ramdas, A. K., Alawadhi, H., Pekarek, T. M.

The Van Vleck paramagnetism of Cd1-xFexTe, a diluted magnetic semiconductor, is explored with electronic Raman spectroscopy of an internal transition of Fe2+, on the one hand, and the spin-flip Raman...

Anisotropic magnetization of the III-VI diluted magnetic semiconductor In1-xMnxS in the mixed state (2005)

Tracy, J. L., Franzese, G., Byrd, A., Garner, J., Pekarek, T. M., Miotkowski, I., ...

The anisotropic magnetization of the III-VI diluted magnetic semiconductor (DMS), In1-xMnxS, is found within a mixed state model and compared to our measurements. The compound has a markedly...

The singlet model of the anisotropic magnetization of the III-VI diluted magnetic semiconductor, In1-xMnxS (2005)

Franzese, G., Byrd, A., Tracy, J. L., Garner, J., Pekarek, T. M., Miotkowski, I., ...

Results for the anisotropic magnetization of the III-VI diluted magnetic semiconductor (DMS), In1-xMnxS, are presented. The compound has a markedly different crystal structure from previously...

Magnetic and transport measurements on the layered III-VI diluted magnetic semiconductor In1-xMnxSe (2005)

Pekarek, T. M., Arenas, D. J., Miotkowski, I., Ramdas, A. K.

Magnetic and transport properties of single-crystalline In1-xMnxSe (x=0.01 and 0.10) have been measured. In1-xMnxSe exhibits a prominent magnetization hysteresis between 90 and 290 K. In,-xMnxSe is...

Structure and energy gap of Cd1-xCaxTe and Cd1-yCaySe as a function of Ca2+ incorporation (2005)

Miotkowski, I., Alawadhi, H., Seong, M. J., Tsoi, S., Ramdas, A. K., Miotkowska, S.

Single crystals of Cd1-xCaxTe and Cd1-yCaySe ternaries, grown by the Bridgman technique and characterized by microprobe and x-ray techniques, showed the upper limit of x and y to be 0.05. The...

The singlet model of the anisotropic magnetization of the III-VI diluted magnetic semiconductor, In1-xMnxS (2005)

Franzese, G., Byrd, A., Tracy, J. L., Garner, J., Pekarek, T. M., Miotkowski, I., ...

Results for the anisotropic magnetization of the III-VI diluted magnetic semiconductor (DMS), In1-xMnxS, are presented. The compound has a markedly different crystal structure from previously...

Structure and energy gap of Cd1-xCaxTe and Cd1-yCaySe as a function of Ca2+ incorporation (2005)

Miotkowski, I., Alawadhi, H., Seong, M. J., Tsoi, S., Ramdas, A. K., Miotkowska, S.

Single crystals of Cd1-xCaxTe and Cd1-yCaySe ternaries, grown by the Bridgman technique and characterized by microprobe and x-ray techniques, showed the upper limit of x and y to be 0.05. The...

Magnetic and transport measurements on the layered III-VI diluted magnetic semiconductor In1-xMnxSe (2005)

Pekarek, T. M., Arenas, D. J., Miotkowski, I., Ramdas, A. K.

Magnetic and transport properties of single-crystalline In1-xMnxSe (x=0.01 and 0.10) have been measured. In1-xMnxSe exhibits a prominent magnetization hysteresis between 90 and 290 K. In,-xMnxSe is...

Anisotropic magnetization of the III-VI diluted magnetic semiconductor In1-xMnxS in the mixed state (2005)

Tracy, J. L., Franzese, G., Byrd, A., Garner, J., Pekarek, T. M., Miotkowski, I., ...

The anisotropic magnetization of the III-VI diluted magnetic semiconductor (DMS), In1-xMnxS, is found within a mixed state model and compared to our measurements. The compound has a markedly...

Resonant electronic raman scattering in a Van Vleck II-VI diluted magnetic semiconductor: Cd1-xFexTe (2005)

Tsoi, S., Miotkowski, I., Rodriguez, S., Ramdas, A. K., Alawadhi, H., Pekarek, T. M.

The Van Vleck paramagnetism of Cd1-xFexTe, a diluted magnetic semiconductor, is explored with electronic Raman spectroscopy of an internal transition of Fe2+, on the one hand, and the spin-flip Raman...

Magnetic measurements on ferromagnetic behavior in the bulk II-VI diluted magnetic semiconductor Zn1-xCrxTe (2004)

Pekarek, T. M., Arenas, D. J., Crooker, B. C., Miotkowski, I., Ramdas, A. K.

Magnetic measurements on the ferromagnetic behavior in the bulk II-VI diluted magnetic semiconductor Zn1-xCrxTe were made on two x=0.0033 single crystals taken from different regions of the same...

Resonant electron spin-flip Raman scattering in CdTe and the diluted magnetic semiconductor Cd1-xVxTe (2004)

Tsoi, S., Miotkowski, I., Rodriguez, S., Ramdas, A. K., Alawadhi, H., Pekarek, T. M.

Resonant enhancement enables the discovery and delineation of spin-flip Raman scattering (SFRS) from free or donor-bound electrons in diluted magnetic semiconductors containing 3d transition-metal...

Lyman spectrum of holes bound to substitutional 3d transition metal ions in a III-V host: GaAs(Mn2+, Co2+, or Cu2+), GaP(Mn2+), and InP(Mn2+) (2003)

Tarhan, E., Miotkowski, I., Rodriguez, S., Ramdas, A. K.

The 3d-transition metal impurities (Mn, Co, and Cu) incorporated into III-V zinc blende hosts (GaAs, GaP, or InP) exhibit well resolved excitation lines followed by a photoionization continuum in...

Origin of the large band-gap bowing in highly mismatched semiconductor alloys (2003)

Wu, J., Walukiewicz, W., Yu, K. M., Ager, J. W., Haller, E. E., Miotkowski, I., ...

Photomodulated reflection, optical absorption, and photoluminescence spectroscopies have been used to measure the composition dependence of interband optical transitions in ZnSe1-xTex and ZnS1-xTex...

Composition dependence of the hydrostatic pressure coefficients of the bandgap of ZnSe1-xTex alloys (2003)

Wu, J., Walukiewicz, W., Yu, K. M., Shan, W., Ager, J. W., Haller, E. E., ...

Optical absorption experiments were performed using diamond-anvil cells to measure the hydrostatic pressure dependence of the fundamental bandgap of ZnSe1-xTex alloys over the entire composition...