A Radio Frequency Single-Electron Transistor Based on an InAs/InP Heterostructure Nanowire (2008)
Nilsson, H. A., Duty, T., Abay, S., Wilson, C., Wagner, J. B., Thelander, C., ...
We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses...
A Radio Frequency Single-Electron Transistor Based on an InAs/InP Heterostructure Nanowire (2008)
Nilsson, H. A., Duty, T., Abay, S., Wilson, C., Wagner, J. B., Thelander, C., ...
We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses...
A Radio Frequency Single-Electron Transistor Based on an InAs/InP Heterostructure Nanowire (2008)
Nilsson, H.A., Duty, T., Abay, S., Wilson, C., Wagner, J.B., Thelander, C., ...
We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses...
Nguyen, H.N., Martinsson, B.G., Wagner, J.B., Carlemalm, E., Ebert, M., Weinbruch, S., ...
Journal of Geophysical Research, 113(D23209), doi:10.1029/2008JD009956, 2008