J. B. Wagner

Details der Publikationsliste

Zeitraum

2008 - 2008

Anzahl

5

Co-Autoren

A Radio Frequency Single-Electron Transistor Based on an InAs/InP Heterostructure Nanowire (2008)

Nilsson, H. A., Duty, T., Abay, S., Wilson, C., Wagner, J. B., Thelander, C., ...

We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses...

A Radio Frequency Single-Electron Transistor Based on an InAs/InP Heterostructure Nanowire (2008)

Nilsson, H. A., Duty, T., Abay, S., Wilson, C., Wagner, J. B., Thelander, C., ...

We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses...

A Radio Frequency Single-Electron Transistor Based on an InAs/InP Heterostructure Nanowire (2008)

Nilsson, H.A., Duty, T., Abay, S., Wilson, C., Wagner, J.B., Thelander, C., ...

We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses...