Performance modification of SiC MEMS (2009)
Niebelschütz, F., Brueckner, K., Cimalla, V., Hein, M.A., Pezoldt, J.
The adjustment of the properties of 3C-SiC based MEMS devices, i.e. the quality factor and resonant frequency, was achieved by changing the residual stress and the 3C-SiC material quality of the...
Nanomechanics of Single Crystalline Tungsten Nanowires (2008)
Cimalla, V., Pezoldt, J., Niebelschütz, M., Ambacher, O., Brückner, K., ...
Phase stabilization and phonon properties of single crystalline rhombohedral indium oxide (2008)
Wang, C.Y., Dai, Y., Pezoldt, J., Lu, B., Kups, T., Cimalla, V., ...
We report on the phase stabilization of rhombohedral (rh-) In2O3 films on sapphire substrate deposited by metal organic chemical vapor deposition. With the help of a high-temperature nucleation layer...
Isotropic dry-etching of SiC for AlGaN/GaN MEMS fabrication (2008)
Niebelschütz, F., Pezoldt, J., Stauden, T., Cimalla, V., Tonisch, K., Brueckner, K., ...
Infrared Gratings Based on SiC/Si-heterostructures (2007)
Rockstuhl, Carsten, Herzig, Hans-Peter, Förster, C., Leycuras, A., Ambacher, O., Pezoldt, J.
Published Version; http://www.scientific.net/public.aspx?module=DefaultModule&action=SearchPaperByKeywordsAction
Infrared Gratings Based on SiC/Si-heterostructures (2007)
Rockstuhl, Carsten, Herzig, Hans-Peter, Förster, C., Leycuras, A., Ambacher, O., Pezoldt, J.
Published Version; http://www.scientific.net/public.aspx?module=DefaultModule&action=SearchPaperByKeywordsAction
Cimalla, V., Pezoldt, J., Ambacher, O.
With the increasing requirements for microelectromechanical systems (MEMS) regarding stability, miniaturization and integration, novel materials such as wide band gap semiconductors are attracting...
Infrared gratings based on SiC/Si-heterostructures (2005)
Rockstuhl, C., Herzig, H. P., Ch. Förster, Leycuras, A., Ambacher, O., Pezoldt, J.
Characterization of Buffer Layers for SiC CVD (1995)
Cimalla, V., Pezoldt, J., Ecke, G., Rößler, H., Eichhorn, G.
Silicon Carbide has been grown by rapid thermal carbonization of (100) and (111) Si surfaces at atmospheric pressure using 1 lpm hydrogen (H2) as a carrier gas and propane (C3H8) with concentrations...
Characterization of Buffer Layers for SiC CVD (1995)
Cimalla, V., Pezoldt, J., Ecke, G., Rößler, H., Eichhorn, G.
Silicon Carbide has been grown by rapid thermal carbonization of (100) and (111) Si surfaces at atmospheric pressure using 1 lpm hydrogen (H2) as a carrier gas and propane (C3H8) with concentrations...
Characterization of Buffer Layers for SiC CVD (1995)
Cimalla, V., Pezoldt, J., Ecke, G., Rößler, H., Eichhorn, G.
Silicon Carbide has been grown by rapid thermal carbonization of (100) and (111) Si surfaces at atmospheric pressure using 1 lpm hydrogen (H2) as a carrier gas and propane (C3H8) with concentrations...