Scientific Commons: J. Stangl

We demonstrate metal organic vapour phase epitaxy growth of GaP/GaAs1-xPx/GaP double heterostructure nanowires on GaP(111)B, and report bright photoluminescence at room temperature. By using...

Influence of growth temperature on interdiffusion in uncapped SiGe-islands on Si(001) determined by anomalous x-ray diffraction and reciprocal space mapping (2005)

Schulli, T. U., Stoffel, M., Hesse, A., Stangl, J., Lechner, R. T., Wintersberger, E., ...

A method for the characterization of strain fields in buried quantum dots using x-ray standing waves (2005)

Novák, J., Holý, V., Stangl, J., Bauer, G., Wintersberger, E., Kiravittaya, S., ...

Structural properties of semiconductor nanostructures from x-ray scattering (2004)

Stangl, J., Schülli, T., Hesse, A., Holý, V., Bauer, G., Stoffel, M., ...

Shape and composition change of Ge dots due to Si capping (2004)

Kirfel, O., Müller, E., Grützmacher, D., Kern, K., Hesse, A., Stangl, J., ...

Effect of overgrowth temperature on shape, strain, and composition of buried Ge islands deduced from x-ray diffraction (2003)

Stangl, J., Hesse, A., Holý, V., Zhong, Z., Bauer, G., Denker, U., ...

Structural properties of SiGe islands: Effect of capping (2003)

Stangl, J., Hesse, A., Holý, V., Bauer, G., Denker, U., Schmidt, O. G., ...

Non-specular X-ray reflection from self-organized ripple structures in Si/Ge multilayers (2002)

Meduňa, M., Holý, V., Stangl, J., Hesse, A., Roch, T., Bauer, G., ...

The ripples at the interfaces of five-period Si/Ge multilayer samples, grown on 0.3degrees miscut (0 0 1) Si are studied systematically. Five samples with Si spacer layer thicknesses ranging from...

Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001) (2002)

Hesse, A., Stangl, J., Holý, V., Roch, T., Bauer, G., Schmidt, O. G., ...

We present a method and results based on x-ray scattering capable of resolving the shape and strain distribution in buried islands, as well as their vertical composition gradient. As an example,...

Strain and composition distribution in uncapped SiGe islands from x-ray diffraction (2001)

Stangl, J., Daniel, A., Holý, V., Roch, T., Bauer, G., Kegel, I., ...

Vertical correlation of SiGe islands in SiGe/Si superlattices: X-ray diffraction versus transmission electron microscopy (2000)

Stangl, J., Roch, T., Bauer, G., Kegel, I., Metzger, T. H., Schmidt, O. G., ...

Auswirkungen Neuer Medien auf die Raumstruktur. Endbericht: In Zusammenarbeit mit dem Institut für Strukturpolitik und Wirtschaftsförderung Halle - Leipzig (isw) (2000)

Zoche, P., Harnischfeger, M., Matuschewski, A., Schädlich, M., Stangl, J.

Lateral Arrangement of Self-Assembled Quantum dots in an SiGe/Si Superlattice (1999)

Bauer, G., Darowski, N., Holy, V., Lübbert, D., Pietsch, U., Zerlauth, S., ...

Lateral ordering of self-organized quantum dots in a SiGe/Si (001) multilayer has been investigated by grazing incidence x-ray diffraction and Monte Carlo growth simulation. It has been demonstrated...

Auswirkungen Neuer Medien auf die Raumstruktur. 5. Zwischenbericht: an das Staatsministerium für Umwelt und Landesentwicklung. In Zusammenarbeit mit dem Institut für Strukturpolitik und Wirtschaftsförderung Halle - Leipzig (isw) (1999)

Harnischfeger, M., Matuschewski, A., Zoche, P., Schädlich, M., Stangl, J.

Auswirkungen Neuer Medien auf die Raumstruktur. 4. Zwischenbericht: an das Staatsministerium für Umwelt und Landesentwicklung. In Zusammenarbeit mit dem Institut für Strukturpolitik und Wirtschaftsförderung Halle - Leipzig (isw) (1999)

Harnischfeger, M., Matuschewski, A., Zoche, P., Dubiel, G., Schädlich, M., Stangl, J.

Study of Relaxation of Strain in Patterned Structures using X-Ray Diffraction Technique 2006-05-15 - 2006-05-17

A. Rehman-Khan, J. Stangl, G. Bauer, D. Buca, ...

Conference presentation

Investigations on ordered arrays of SiGe-islands 2007-10-04 - 2007-10-06

N. Hrauda, J. Stangl, G. Bauer

Talk

X-Ray Diffraction Study of the Composition and Strain Fields in SiGe Islands capped with Si and SiNx 2008-09-15 - 2008-09-19

N. Hrauda, J.J. Zhang, M. Stoffel, J. Stangl, ...