J. Thibault-Desseaux

Details der Publikationsliste

Zeitraum

1987 - 1998

Anzahl

22

Co-Autoren

Microstructure of Interfaces in SiC / Glass Composites of Different Tenacity. (1998)

Ponthieu, C., Lancin, M., Thibault-Desseaux, J., Vignesoult, S.

SiC Nicalon 202 fibers/LAS or LAS + Nb2O5 matrix composites have been characterized by HREM and SIMS. A fiber-matrix interaction results in (i) an interfacial layer of carbon whose microstructure...

MICROSTRUCTURE OF INTERFACES IN SiC / GLASS COMPOSITES OF DIFFERENT TENACITY (1990)

Ponthieu, C., Lancin, M., Thibault-Desseaux, J., Vignesoult, S.

SiC Nicalon 202 fibers/LAS or LAS + Nb2O5 matrix composites have been characterized by HREM and SIMS. A fiber-matrix interaction results in (i) an interfacial layer of carbon whose microstructure...

MICROSTRUCTURE OF INTERFACES IN SiC / GLASS COMPOSITES OF DIFFERENT TENACITY (1990)

Ponthieu, C., Lancin, M., Thibault-Desseaux, J., Vignesoult, S.

SiC Nicalon 202 fibers/LAS or LAS + Nb2O5 matrix composites have been characterized by HREM and SIMS. A fiber-matrix interaction results in (i) an interfacial layer of carbon whose microstructure...

MICROSTRUCTURE OF INTERFACES IN SiC / GLASS COMPOSITES OF DIFFERENT TENACITY (1990)

Ponthieu, C., Lancin, M., Thibault-Desseaux, J., Vignesoult, S.

SiC Nicalon 202 fibers/LAS or LAS + Nb2O5 matrix composites have been characterized by HREM and SIMS. A fiber-matrix interaction results in (i) an interfacial layer of carbon whose microstructure...

Dislocations stopped by the Σ = 9 (122 ) grain boundary in Si. An HREM study of thermal activation (1989)

Thibault-Desseaux, J., Putaux, J.L., Bourret, A., Kirchner, H.O.K.

Experimentally observed configurations of the integration of glide dislocations into a Σ = 9 boundary are explained in analogy to cross-slip in the bulk. Crystallographically possible...

Dislocations stopped by the Σ = 9 (122 ) grain boundary in Si. An HREM study of thermal activation (1989)

Thibault-Desseaux, J., Putaux, J.L., Bourret, A., Kirchner, H.O.K.

Experimentally observed configurations of the integration of glide dislocations into a Σ = 9 boundary are explained in analogy to cross-slip in the bulk. Crystallographically possible...

Dislocations stopped by the Σ = 9 (122 ) grain boundary in Si. An HREM study of thermal activation (1989)

Thibault-Desseaux, J., Putaux, J.L., Bourret, A., Kirchner, H.O.K.

Experimentally observed configurations of the integration of glide dislocations into a Σ = 9 boundary are explained in analogy to cross-slip in the bulk. Crystallographically possible...

GRAIN-BOUNDARY DISLOCATIONS STRUCTURE AND MOVEMENT IN Σ=9 STUDIED BY HREM (1988)

Thibault-Desseaux, J., Elkajbaji, M.

The evolution of grain-boundary structure after deformation has been studied by HREM. The decomposition of the running-in dislocations into DSC perfect dislocations has been shown. The structure of...

PHASE TRANSFORMATION IN BORON DOPED SiC : HREM STUDY OF A TWIN INTERFACE (1988)

Lancin, M., Thibault-Desseaux, J.

In the materials studied, the phase transformation β → α involves the formation of feathers which can be described as penetration twins. In this investigation the structure of a twin...

GRAIN-BOUNDARY DISLOCATIONS STRUCTURE AND MOVEMENT IN Σ=9 STUDIED BY HREM (1988)

Thibault-Desseaux, J., Elkajbaji, M.

The evolution of grain-boundary structure after deformation has been studied by HREM. The decomposition of the running-in dislocations into DSC perfect dislocations has been shown. The structure of...

PHASE TRANSFORMATION IN BORON DOPED SiC : HREM STUDY OF A TWIN INTERFACE (1988)

Lancin, M., Thibault-Desseaux, J.

In the materials studied, the phase transformation β → α involves the formation of feathers which can be described as penetration twins. In this investigation the structure of a twin...

GRAIN-BOUNDARY DISLOCATIONS STRUCTURE AND MOVEMENT IN Σ=9 STUDIED BY HREM (1988)

Thibault-Desseaux, J., Elkajbaji, M.

The evolution of grain-boundary structure after deformation has been studied by HREM. The decomposition of the running-in dislocations into DSC perfect dislocations has been shown. The structure of...

PHASE TRANSFORMATION IN BORON DOPED SiC : HREM STUDY OF A TWIN INTERFACE (1988)

Lancin, M., Thibault-Desseaux, J.

In the materials studied, the phase transformation β → α involves the formation of feathers which can be described as penetration twins. In this investigation the structure of a twin...

Deformation mechanisms of Σ = 9 bicrystals of silicon (1987)

El Kajbaji, M., Thibault-Desseaux, J., Martinez-Hernandez, M., Jacques, A., George, A.

Interactions between dislocations and Σ = 9 grain boundaries were studied in slightly deformed silicon bicrystals by several imaging techniques. A very complex dislocation arrangement in the...

Dislocation cores in semiconductors. From the « shuffle or glide » dispute to the « glide and shuffle » partnership (1987)

Louchet, F., Thibault-Desseaux, J.

Possible geometrical structures for dislocation cores in elementary and compound semiconductors are shown and discussed in the light of a review of recent work in HREM and core energy calculations....

Deformation mechanisms of Σ = 9 bicrystals of silicon (1987)

El Kajbaji, M., Thibault-Desseaux, J., Martinez-Hernandez, M., Jacques, A., George, A.

Interactions between dislocations and Σ = 9 grain boundaries were studied in slightly deformed silicon bicrystals by several imaging techniques. A very complex dislocation arrangement in the...

Dislocation cores in semiconductors. From the « shuffle or glide » dispute to the « glide and shuffle » partnership (1987)

Louchet, F., Thibault-Desseaux, J.

Possible geometrical structures for dislocation cores in elementary and compound semiconductors are shown and discussed in the light of a review of recent work in HREM and core energy calculations....

Deformation mechanisms of Σ = 9 bicrystals of silicon (1987)

El Kajbaji, M., Thibault-Desseaux, J., Martinez-Hernandez, M., Jacques, A., George, A.

Interactions between dislocations and Σ = 9 grain boundaries were studied in slightly deformed silicon bicrystals by several imaging techniques. A very complex dislocation arrangement in the...

Dislocation cores in semiconductors. From the « shuffle or glide » dispute to the « glide and shuffle » partnership (1987)

Louchet, F., Thibault-Desseaux, J.

Possible geometrical structures for dislocation cores in elementary and compound semiconductors are shown and discussed in the light of a review of recent work in HREM and core energy calculations....