Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy (2004)
DE GRYSE, O, Clauws, Paul, VANHELLEMONT, J, LEBEDEV, OI, VAN LANDUYT, J, SIMOEN, E, ...
A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon (2003)
De Gryse, Olivier, Vanhellemont, Jan, Clauws, Paul, LEBEDEV, O, VAN LANDUYT, J, SIMOEN, E, ...
Vanhellemont, J, Clauws, P, Lebedev, O, Van Landuyt, J, Simoen, Eddy, ...
Infrared absorption spectra of composite precipitates are analysed with a modified Day-Thorpe algorithm, assuming a precipitated phase consisting of a mixture of two components with known optical...
Voorbij de grenzen van het zien. (2002)
ADRIAENSENS, D, VAN MEIR, F, TIMMERMANS, JP, CAUBERGS, R, VAN DYCK, I, Simoens, Paul, ...
Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon. (2002)
SIMOEN, E, LOO, R, CLAEYS, C, De Gryse, Olivier, Clauws, Paul, VAN LANDUYT, J, ...
Reliability of copper dual damascene influenced by pre-clean (2002)
Lanckmans, Filip, Van Den Bosch, Geert, Van Hove, Marleen, Bender, Hugo, ...
Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon (2002)
Loo, Roger, Degryse, O, Clauws, P, Van Landuyt, J, ...
HREM investigation of a Fe/GaN/Fe tunnel junction (2001)
Nistor, L, Bender, H, Van Landuyt, J, Nemeth, S, Boeve, H, De Boeck, J, ...
The structure of Fe/GaN/Fe ferromagnetic electrodes is studied by high resolution transmission electron microscopy. The layers grow epitaxially on the GaAs substrate with the top Fe layer 90degrees...
Nistor, Leona, Bender, Hugo, Lauwers, A, ...
EFTEM study of plasma etched low-k Si-O-C dielectrics (2001)
Bender, Hugo, Donaton, R. A, Vanhaelemeersch, Serge, Van Landuyt, J
Nistor, Leona, Bender, Hugo, Lauwers, A, ...
With further down-scaling below 0.25mum technologies, CoSi2 is replacing TiSi2 because of its superior formation chemistry on narrow lines and favourable stress behaviour. Shallow trench isolation...
Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer (2000)
Bender, H, Wu, MF, Van Landuyt, J, O'Donnell, KP, ...
We report a direct observation of quantum dots formed spontaneously in a thick InGaN epilayer by high resolution transmission electron microscopy. Investigation of a (280 nm thick) In0.22Ga0.78N...
Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer. (2000)
NISTOR, L, BENDER, H, VANTOMME, A, WU, MF, VAN LANDUYT, J, O'DONNELL, KP, ...
VANTOMME, A, WU, MF, HOGG, S, LANGOUCHE, G, JACOBS, K, Moerman, Ingrid, ...
Wu, MF, Jacobs, K, Moerman, I, ...
Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic...
Interaction of Ti capped Co thin film with Si3N4 (2000)
Bender, Hugo, Conard, Thierry, Gutakovskii, A., Van Landuyt, J., ...
Laser induced phase transition in iron thin films (1994)
Teodorescu, V., Mihailescu, I., Dinescu, M., Chitica, N., Nistor, L., Van Landuyt, J., ...
No abstract available
Laser induced phase transition in iron thin films (1994)
Teodorescu, V., Mihailescu, I., Dinescu, M., Chitica, N., Nistor, L., Van Landuyt, J., ...
No abstract available
Laser induced phase transition in iron thin films (1994)
Teodorescu, V., Mihailescu, I., Dinescu, M., Chitica, N., Nistor, L., Van Landuyt, J., ...
No abstract available
InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy (1992)
DE BOECK, Joan, Dobbelaere, W., Heremans, P., Mertens, R., Borghs, G., Luyten, W., ...
InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy (1992)
DE BOECK, Joan, Dobbelaere, W., Heremans, P., Mertens, R., Borghs, G., Luyten, W., ...
Van Cappellen, E., Van Dyck, D., Van Landuyt, J., Adams, F.
In the present contribution a method is presented which enables to perform absorption and fluorescence corrections in X-ray spectroscopy of transparent specimens. The method is based on several...
Dolino, G., Bachheimer, J.P., Berge, B., Zeyen, C.M.E., Van Tendeloo, G., Van Landuyt, J., ...
A detailed study of the lock-in transition of the incommensurate phase of quartz has been made by two complementary techniques : elastic neutron diffraction and electron microscopy. The neutron...
Van Cappellen, E., Van Dyck, D., Van Landuyt, J., Adams, F.
In the present contribution a method is presented which enables to perform absorption and fluorescence corrections in X-ray spectroscopy of transparent specimens. The method is based on several...
Dolino, G., Bachheimer, J.P., Berge, B., Zeyen, C.M.E., Van Tendeloo, G., Van Landuyt, J., ...
A detailed study of the lock-in transition of the incommensurate phase of quartz has been made by two complementary techniques : elastic neutron diffraction and electron microscopy. The neutron...
Van Cappellen, E., Van Dyck, D., Van Landuyt, J., Adams, F.
In the present contribution a method is presented which enables to perform absorption and fluorescence corrections in X-ray spectroscopy of transparent specimens. The method is based on several...
Dolino, G., Bachheimer, J.P., Berge, B., Zeyen, C.M.E., Van Tendeloo, G., Van Landuyt, J., ...
A detailed study of the lock-in transition of the incommensurate phase of quartz has been made by two complementary techniques : elastic neutron diffraction and electron microscopy. The neutron...
ELECTRON MICROSCOPICAL STUDY OF OXYGEN RELATED DEFECTS IN CZOCHRALSKI SILICON (1983)
Bender, H., Claeys, C., Van Landuyt, J., Declerck, G., Amelinckx, S., Van Overstraeten, R.
The defects formed during a low temperature treatment of Czochralski silicon with a high interstitial oxygen content are studied by both high voltage and high resolution electron microscopy.
ELECTRON MICROSCOPICAL STUDY OF OXYGEN RELATED DEFECTS IN CZOCHRALSKI SILICON (1983)
Bender, H., Claeys, C., Van Landuyt, J., Declerck, G., Amelinckx, S., Van Overstraeten, R.
The defects formed during a low temperature treatment of Czochralski silicon with a high interstitial oxygen content are studied by both high voltage and high resolution electron microscopy.
ELECTRON MICROSCOPICAL STUDY OF OXYGEN RELATED DEFECTS IN CZOCHRALSKI SILICON (1983)
Bender, H., Claeys, C., Van Landuyt, J., Declerck, G., Amelinckx, S., Van Overstraeten, R.
The defects formed during a low temperature treatment of Czochralski silicon with a high interstitial oxygen content are studied by both high voltage and high resolution electron microscopy.
ELECTRON MICROSCOPY STUDY OF THE NATURE OF THE LOW-TEMPERATURE PHASE TRANSITION IN α-MnSe (1982)
Van Landuyt, J., Amelinckx, S., Van Bruggen, C.
Electron microscopy and electron diffraction has been used to study the low temperature phase transition in α-MnSe by in situ investigations down to liquid nitrogen temperatures. Direct...
EVIDENCE FOR A SHEAR TRANSFORMATION IN Au2Mn (1982)
Van Tendeloo, G., Van Landuyt, J., Amelinckx, S.
It is shown that Au2Mn is formed by a shear transformation from an ordered close packed structure. The structure of Au2Mn is only statistically tetragonal ; it is in fact a domain structure...
ELECTRON MICROSCOPY STUDY OF THE NATURE OF THE LOW-TEMPERATURE PHASE TRANSITION IN α-MnSe (1982)
Van Landuyt, J., Amelinckx, S., Van Bruggen, C.
Electron microscopy and electron diffraction has been used to study the low temperature phase transition in α-MnSe by in situ investigations down to liquid nitrogen temperatures. Direct...
EVIDENCE FOR A SHEAR TRANSFORMATION IN Au2Mn (1982)
Van Tendeloo, G., Van Landuyt, J., Amelinckx, S.
It is shown that Au2Mn is formed by a shear transformation from an ordered close packed structure. The structure of Au2Mn is only statistically tetragonal ; it is in fact a domain structure...
ELECTRON MICROSCOPY STUDY OF THE NATURE OF THE LOW-TEMPERATURE PHASE TRANSITION IN α-MnSe (1982)
Van Landuyt, J., Amelinckx, S., Van Bruggen, C.
Electron microscopy and electron diffraction has been used to study the low temperature phase transition in α-MnSe by in situ investigations down to liquid nitrogen temperatures. Direct...
EVIDENCE FOR A SHEAR TRANSFORMATION IN Au2Mn (1982)
Van Tendeloo, G., Van Landuyt, J., Amelinckx, S.
It is shown that Au2Mn is formed by a shear transformation from an ordered close packed structure. The structure of Au2Mn is only statistically tetragonal ; it is in fact a domain structure...
A survey is given of the potentialities of electron microscopy and electron diffraction for the detection and analysis of order-disorder processes and phase transitions in solids. Particular...
A survey is given of the potentialities of electron microscopy and electron diffraction for the detection and analysis of order-disorder processes and phase transitions in solids. Particular...
A survey is given of the potentialities of electron microscopy and electron diffraction for the detection and analysis of order-disorder processes and phase transitions in solids. Particular...
SHEAR STRUCTURES AND CRYSTALLOGRAPHIC SHEAR PROPAGATION (1974)
Crystallographic shear appears to be a defect-controlled type of process for the formation of the oxides in the homologous series such as TiO2-x, WO3-x out of their respective stoichiometric phases...
SHEAR STRUCTURES AND CRYSTALLOGRAPHIC SHEAR PROPAGATION (1974)
Crystallographic shear appears to be a defect-controlled type of process for the formation of the oxides in the homologous series such as TiO2-x, WO3-x out of their respective stoichiometric phases...
SHEAR STRUCTURES AND CRYSTALLOGRAPHIC SHEAR PROPAGATION (1974)
Crystallographic shear appears to be a defect-controlled type of process for the formation of the oxides in the homologous series such as TiO2-x, WO3-x out of their respective stoichiometric phases...
A comparison of three strategies for teaching object names.
Cuvo, A J, Klevans, L, Borakove, S, Borakove, L S, Van Landuyt, J, Lutzker, J R
Researchers in applied behavior analysis have been charged to provide large-scale demonstration of the outcomes of evaluations. In this research, three experiences were conducted to examine the...
A comparison of three strategies for teaching object names.
Cuvo, A J, Klevans, L, Borakove, S, Borakove, L S, Van Landuyt, J, Lutzker, J R
Researchers in applied behavior analysis have been charged to provide large-scale demonstration of the outcomes of evaluations. In this research, three experiences were conducted to examine the...