J. Y. Jo

Nonlinear Dynamics of Domain Wall Propagation in Epitaxial Ferroelectric Thin Films (2009)

Jo, J. Y., Yang, S. M., Kim, T. H., Lee, H. N., Park, S., ...

We investigated the ferroelectric domain wall propagation in epitaxial Pb(Zr,Ti)O3 thin films over a wide temperature range (3 - 300 K). We measured the domain wall velocity under various electric...

Domain wall motion in epitaxial Pb(Zr,Ti)O3 capacitors investigated by modified piezoresponse force microscopy (2008)

Yang, S. M., Jo, J. Y., Kim, D. J., Sung, H., Noh, T. W., Lee, H. N., ...

We investigated the time-dependent domain wall motion of epitaxial PbZr0.2Ti0.8O3 capacitors 100 nm-thick using modified piezoresponse force microscopy (PFM). We obtained successive domain evolution...

Composition-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb(Zr_{x}Ti_{1-x})O_{3} thin films (2007)

Jo, J. Y., Yang, S. M., Han, H. S., Kim, D. J., Choi, W. S., Noh, T. W., ...

We investigated the time-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb(ZrxTi1-x)O3 thin films with various Zr concentrations. We could explain all the polarization...

Observation of inhomogeneous domain nucleation in epitaxial Pb(Zr,Ti)O3 capacitors (2007)

Kim, D. J., Jo, J. Y., Kim, T. H., Yang, S. M., Chen, B., Kim, Y. S., ...

We investigated domain nucleation process in epitaxial Pb(Zr,Ti)O3 capacitors under a modified piezoresponse force microscope. We obtained domain evolution images during polarization switching...

Domain Switching Kinetics in Disordered Ferroelectric Thin Films (2007)

Jo, J. Y., Han, H. S., Song, T. K., Noh, T. W.

We investigated domain kinetics by measuring the polarization switching behaviors of polycrystalline Pb(Zr,Ti)O$_{3}$ films, which are widely used in ferroelectric memory devices. Their switching...

Coercive fields in ultrathin BaTiO3 capacitors (2006)

Jo, J. Y., Kim, Y. S., Noh, T. W., Yoon, Jong-Gul, Song, T. K.

Thickness-dependence of coercive field (EC) was investigated in ultrathin BaTiO3 capacitors with thicknesses (d) between 30 and 5 nm. The EC appears nearly independent of d below 15 nm, and decreases...

Polarization Switching Dynamics Governed by Thermodynamic Nucleation Process in Ultrathin Ferroelectric Films (2006)

Jo, J. Y., Kim, D. J., Kim, Y. S., Song, T. K., ...

A long standing problem of domain switching process - how domains nucleate - is examined in ultrathin ferroelectric films. We demonstrate that the large depolarization fields in ultrathin films could...

Polarization Relaxation Induced by Depolarization Field in Ultrathin Ferroelectric BaTiO$_3$ Capacitors (2005)

Kim, D. J., Jo, J. Y., Kim, Y. S., Chang, Y. J., Lee, J. S., Yoon, Jong-Gul, ...

Time-dependent polarization relaxation behaviors induced by a depolarization field $E_{d}$ were investigated on high-quality ultrathin SrRuO$_{3}$/BaTiO$_{3}$/SrRuO$_{3}$ capacitors. The $E_d$ values...

Ferroelectric properties of SrRuO3/BaTiO3/SrRuO3 ultrathin film capacitors free from passive lay (2005)

Kim, Y. S., Jo, J. Y., Kim, D. J., Chang, Y. J., Lee, J. H., Noh, T. W., ...

Structural studies on ultrathin SrRuO3/BaTiO3/SrRuO3 capacitors, with BaTiO3 thicknesses of between 5 nm and 30 nm, show well-defined interfaces between ferroelectric BaTiO3 and electrode SrRuO3...