. Its configuration space (2007)
Priscilla E. Greenwood, Jiaming Sun
We continue a study of Schonmann (1994), Schonmann and Shlosman(1996) and Greenwood and Sun (1997) regarding the competing influences of boundary conditions and external field for the Ising model. We...
Silicon-on-insulator microcavity light emitting diodes with two Si/SiO2 Bragg reflectors (2006)
Potfajova, Jaroslava, Sun, Jiaming, Schmidt, Bernd, Dekorsy, Thomas, Skorupa, Wolfgang, Helm, Manfred
Light emitting pn-diodes were fabricated on a 5.8 μm thick n-type Si device layer of a silicon-on-insulator (SOI) wafer using standard silicon technology and boron implantation. The thickness of...
Personal Global Connections and New Residential Differentiation in Shanghai, China (2005)
China: An International Journal - Volume 3, Number 2, September 2005
Bright green electroluminescence from Tb 3+ in silicon metal-oxide-semiconductor devices (2005)
Sun, Jiaming, Skorupa, Wolfgang, Dekorsy, Thomas, Helm, Manfred, Rebohle, Lars, Gebel, Thoralf
Bright green electroluminescence with luminance up to 2800 cd/m² is reported from indium-tin-oxide/SiO2:Tb/Si metal-oxide-semiconductor devices. The SiO2:Tb3+ gate oxide was prepared by thermal...
Rare earth ion implantation for silicon based light emission : from infrared to ultraviolet (2005)
Skorupa, Wolfgang, Sun, Jiaming, Prucnal, Slawomir, Rebohle, Lars, Gebel, Thoralf, Nazarov, Alexei N., ...
Using ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm3+, Er3+) were created into the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS)...
Efficient silicon based light emitters (2005)
Helm, Manfred, Sun, Jiaming, Potfajova, Jaroslava, Dekorsy, Thomas, Schmidt, Bernd, Skorupa, Wolfgang
Recent progress on electrically driven silicon based light emitters is reviewed, with emphasis on our work on light emitting pn diodes (LED) and MOS devices doped with rare-earth elements. The LEDs...
Light-emitting silicon pn diodes (2004)
Dekorsy, Thomas, Sun, Jiaming, Skorupa, Wolfgang, Schmidt, Bernd, Helm, Manfred
We report on the electrical and optical characteristics of silicon light-emitting pn diodes. The diodes are prepared by ion implantation of boron at high doses and subsequent hightemperature...
Silicon-based electrically driven microcavity LED (2004)
Potfajova, Jaroslava, Sun, Jiaming, Winnerl, Stephan, Dekorsy, Thomas, Skorupa, Wolfgang, Schmidt, Bernd, ...
A silicon pn-diode was embedded into a microcavity composed of a buried metal silicide as bottom reflector and a Si/SiO2 Bragg mirror as top reflector. Spectral narrowing and an increased intensity...
Sun, Jiaming, Skorupa, Wolfgang, Dekorsy, Thomas, Helm, Manfred, Rebohle, Lars, Gebel, Thoralf
Strong ultraviolet electroluminescence with an external quantum efficiency above 1% is observed from an indium-tin oxide/SiO2:Gd/Si metaloxidesemiconductor structure. The SiO2:Gd active layer is...
Sun, Jiaming, Dekorsy, Thomas, Skorupa, Wolfgang, Schmidt, Bernd, Mücklich, Arndt, Helm, Manfred
The origin of two luminescence bands with maxima around 1.05 eV and 0.95 eV is studied in silicon pn diodes prepared by boron implantation. The two peaks are related to the formation of p-type doping...
Bound-exciton-induced current bistability in a silicon light-emitting diode (2003)
Sun, Jiaming, Dekorsy, Thomas, Skorupa, Wolfgang, Schmidt, Bernd, Helm, Manfred
A bound-exciton-induced current bistability is observed under forward bias in an efficient silicon light-emitting diode at low temperatures. Two stable states of the S-type differential conductivity...
Sun, Jiaming, Dekorsy, Thomas, Skorupa, Wolfgang, Schmidt, Bernd, Helm, Manfred
Efficient electroluminescence with power efficiency up to 0.12% is observed from silicon pn diodes prepared by boron implantation with boron concentrations above the solubility limit at the...
Growth and Properties of Quaternary Alloy Magnetic Semiconductor (InGaMn)As (2001)
Ohya, Shinobu, Shimizu, Hiromasa, Higo, Yutaka, Sun, Jiaming, Tanaka, Masaaki
We have studied growth and properties of quaternary alloy magnetic semiconductor (InGaMn)As grown both on GaAs substrates and on InP substrates by low-temperature molecular-beam epitaxy (LT-MBE)....
On criticality for competing influences of boundary and external field in the Ising (1998)
Priscilla E. Greenwood, Jiaming Sun
We continue a study of Schonmann (1994), Schonmann and Shlosman(1996) and Green-wood and Sun (1997) regarding the competing influences of boundary conditions and ex-ternal field for the Ising model....
Spatial Equity in Facilities Providing Low- or No-Fee Screening Mammography in Chicago Neighborhoods
Zenk, Shannon N., Tarlov, Elizabeth, Sun, Jiaming
Recent research suggests living in an economically disadvantaged neighborhood is associated with decreased likelihood of undergoing mammography and increased risk of late-stage breast cancer...
Untangling a global – local nexus: sorting out residential sorting in Shanghai
The local ‘touchdown’ of globalization gives rise to many complex global – local nexuses, and understanding their nature, structure, and consequences presents a major analytical challenge for...
Exponential convergence for sequences of random variables
Using the compactness in large deviation theory, this note describes a large deviation upper bound by a lower semicontinuous function. It then obtains a characterization for exponential convergence...