Performance modification of SiC MEMS (2009)
Niebelschütz, F., Brueckner, K., Cimalla, V., Hein, M.A., Pezoldt, J.
The adjustment of the properties of 3C-SiC based MEMS devices, i.e. the quality factor and resonant frequency, was achieved by changing the residual stress and the 3C-SiC material quality of the...
Resonant piezoelectric ALGAN/GAN mems sensors in longitudinal mode operation (2009)
Brueckner, K., Niebelschütz, F., Tonisch, K., Stephan, R., Cimalla, V., Ambacher, O., ...
Free-standing piezoelectric AlGaN/GaN beam resonators have been prepared on silicon substrates using a semiconductor fabrication process. To realize the back electrode for the piezoelectric active...
Brueckner, K., Niebelschütz, F., Tonisch, K., Michael, S., Dadgar, A., Krost, A., ...
Free-standing piezoelectric AlGaN/GaN beam resonators have been prepared on silicon substrates. The two-dimensional electron gas at the interface of the III/V heterostructure has been employed to act...
Isotropic dry-etching of SiC for AlGaN/GaN MEMS fabrication (2008)
Niebelschütz, F., Pezoldt, J., Stauden, T., Cimalla, V., Tonisch, K., Brueckner, K., ...
Electromechanical resonances of SiC and AlN beams under ambient conditions (2005)
Brueckner, K., Förster, Ch., Tonisch, K., Cimalla, V., Ambacher, O., Stephan, R., ...
MEMS resonators offer great potential for RF sensor and filter applications. A semiconductor process has been used to prepare SiC and AlN beam resonators. The metallised beams are excited by an RF...