K. Hess

Details der Publikationsliste

Zeitraum

1977 - 2009

Anzahl

86

Co-Autoren

Possible Experience: from Boole to Bell (2009)

Hess, K., Michielsen, K., De Raedt, H.

Mainstream interpretations of quantum theory maintain that violations of the Bell inequalities deny at least either realism or Einstein locality. Here we investigate the premises of the Bell-type...

Complete intersections and rational homotopy theory (2009)

Greenlees, J. P. C., Hess, K., Shamir, S.

We investigate various homotopy invariant formulations of commutative algebra in the context of rational homotopy theory. The main subject is the complete intersection condition, where we show that a...

Calculation of hot electron distributions in silicon by means of an Evolutionary Algorithm (2007)

J. Jakumeit, U. Ravaioli, K. Hess

A new approach to simulate electronic transport at high energies in silicon is introduced, which is based on a mixture of evolutionary optimization algorithms and the Monte Carlo technique. The...

Europhysics Letters PREPRINT Comment on "Exclusion of time in the theorem of Bell" (2007)

Hess And Philipp, K. Hess, R. D. Gill, G. Weihs, A. Zeilinger, M. Zukowski

A recent Letter by Hess and Philipp claims that Bell's theorem neglects the possibility of time-like dependence in local hidden variables, hence is not conclusive. Moreover the authors claim...

Thresholds of Impact Ionization in Semiconductors (2006)

Hess, K., Bude, J.

We have completed our Monte Carlo approach to impact ionization of electrons in GaAs, InP and InAs and most recently in Ga0.43 In0.57 As. We find that in all these materials the ionization mechanism...

MR-spectroscopic imaging during visual stimulation in subgroups of migraine with aura (2005)

Sandor, PS, Dydak, U, Schoenen, Jean, Kollias, S, Hess, K, Boesiger, P, ...

Migraine pathophysiology possibly involves deficient mitochondrial energy reserve and diminished cortical habituation. Using functional magnetic resonance spectroscopic imaging (fMRSI), we studied...

A model structure a la Thomason on 2-Cat (2004)

Worytkiewicz, K., Hess, K., Parent, P. E., Tonks, A.

We exhibit a model structure on 2-Cat, obtained by transfer from sSet across the adjunction C_2 o Sd^2 -| Ex^2 o N_2.

A Local Mathematical Model for EPR-Experiments (2002)

Philipp, W., Hess, K.

In this paper we give a detailed and simplified version of our original mathematical model published first in the Proceedings of the National Academy of Science. We hope that this will clarify some...

Effect of Localized Vibrations on the Si Surface Concentrations of Hydrogen or Deuterium (2002)

Ipatova, I. P., Chikalova-Luzina, O. P., Hess, K.

This paper deals with the calculations of the concentrations of adatoms H (or D) on thr surface of Si which is in thermodynamic equllibrium with hydrogen or deutenium gas.

Monte Carlo Simulation of Real-Space Electron Transfer in GaAs-AlGaAs Heterostructure, (2002)

Glisson,T. H., Hauser,J. R., Littlejohn,M. A., Hess,K., Streetman,B. G.

Prepared in cooperation with Illinois Univ. at Urbana-Champaign, Contracts N00014-79-C-0424 and N00014-76-C-0806. Sponsored in part by Contract N00014-79-c-0768.

Hot Electron Effects of Importance for Micron and Submicron Devices. (2002)

Hess, K., Stillman, G. E.

During the period of this contract fifteen papers have been published. The manuscripts concern lateral transport in superlattices, transport at extremely high electric fields and impact ionization...

The Dynamics of Electron-Hole Collection in Quantum Well Heterostructures, (2002)

Tang,J. Y., Hess,K., Holonyak,N. , Jr., Coleman,J. J.

Prepared in cooperation with Rockwell International, Thousand Oaks, CA. Microelectronics Research and Development Center, Contract N00014-78-C-0711. Sponsored in part by Grant NSF-DMR80-20250.

Ion Implantation Defects in Silicon and the Performance of Micron and Submicron Devices. (2002)

Streetman,B. G., Hess,K.

We report investigations of hot electron effects in heterojunction layers, studies of laser annealing and ion implantation, and a general study of electronic transport in small devices.

The Construction and Study of Improved Al(x)Ga(1-x)As-GaAs Heterostructure Devices. (2002)

Holonyak,N. , Jr., Stillman,G. E., Hess,K., Coleman,J. J.

The III-V materials GaAs, Al sub x Ga subl-x As, AlAs offers important advantages that make possible the fabrication of a large range of sophisticated heterostructure devices. The devices that have...

Transient Electronic Transport in InP Under the Condition of High-Energy Electron Injection, (2002)

Brennan,K., Hess,K., Tang,J. Y. F., Iafrate,G. J.

Transient tranport of electrons in InP is studied under the condition of high-energy electron injection. This study makes use of a Monte Carlo simulation with the unique inclusion of realistic band...

Anharmonic Lifetime of H and D on the Si Surface (2002)

Ipatova, I. P., Chikalova-Luzina, O. P., Hess, K.

The study of H and D adatoms on the surface of Si by STM technique and by optical measurements indicate that anharmonic interaction of adatom localized vibrations with surface phonons of Si defines...

Nonlinear electronic transport and device performance of HEMTs (2001)

Quay, R., Hess, K., Reuter, R., Schlechtweg, M., Grave, T., Palankovski, V., ...

We assess the impact of nonlinear electronic transport and, in particular, of real space transfer (RST) on device performance for advanced III/V high electron mobility transistors (HEMTs) using the...

Simulation of Biological Ionic Channels by Technology Computer-Aided Design (2001)

K. Hess, U. Ravaioli, M. Gupta, N. Aluru, Van Der Straaten, R. S. Eisenberg

This paper discusses the use of established Technology Computer-Aided Design (TCAD) tools and methodologies for the study of charge transport in molecular biology systems, like ionic channels, that...

Temperature Dependence of Electrical and Optical Modulation Responses of Quantum-Well Lasers (1999)

Keating, T., Jin, Xiaomin, Chuang, Shun Lien, Hess, K.

We present theory and experiment for high-speed optical injection in the absorption region of a quantum-well laser and compare the results with those of electrical injection including the carrier...

InGaPAs by Metalorganic Chemical Vapor Deposition. (1998)

Hess,K., Kasemset,D.

The reaction chemistry involved in the material synthesis of the quaternary compound Gal-xInxAsyPl-y by LPMOCVD has been studied with particular emphasis being devoted to understanding the...

Ensemble Monte Carlo Simulation of a Velocity-Modulation Field Effect Transistor (VMT). (1998)

Kizilyalli, I. C., Hess, K.

We present numerical simulations of velocity modulated field-effect transistors as proposed by Sakaki. Using self-consistent particle-field Monte Carlo analysis, we assess possible advantages of...

Electronic Transport in Semiconductor Heterostructures and in Mesoscopic Systems (1998)

Hess, K.

Much of the work in the past three years has concentrated on creating a predictive simulation tool for edge emitting semiconductor quantum well laser diodes. This simulator (MINILASE II) has been...

Journal of Computational Electronics: Proceedings of the International Workshop on Computational Electronics (8th) (IWCE-8), Beckman Institute, University of Illinois, 15-18 October 2001. Volume 1, Issue 1-2 (1998)

Ferry, D. K., Hess, K.

The Journal of Computation Electronics fills the need tor a publication dedicated to physical simulation of devices and processes, with a focus on interdisciplinary work and large scale...

Teilprojekt C2: Energieoptimierte Antriebsstrukturen und Bewegungssteuerung (1998)

Hess, K., Neugebauer, R.

Maschinen und Anlagen der Umformtechnik sind durch einen hohen Energieumsatz gekennzeichnet. Bei der Auslegung von Antrieben fuer Umformmaschinen stand bisher die Realisierung der geforderten...

Hierarchy of Full Band Structure Models for Monte Carlo Simulation (1998)

U. Ravaioli, A. Duncan, A. Pacelli, C. Wordelman, K. Hess

This paper discusses the various hierarchy levels that are possible when the full band structure is considered. At the highest level, the scatterings are treated using complete k-k’ transition...

Gain Calculation in a Quantum Well Laser Simulator Using an Eight Band k.p Model (1998)

F. Oyafuso, P. Von Allmen, M. Grupen, K. Hess

Effects of non-parabolicity and band-warping of the energy dispersion are entered in a quantum well laser simulator (MINILASE-II), which self-consistently solves Schödinger's equation, Poisson's...

New Approach to Hot Electron Effects in Si-MOSFETs Based on an Evolutionary Algorithm Using a Monte Carlo Like Mutation Operator (1998)

J. Jakumeit, U. Ravaioli, K. Hess

We introduce a new approach to hot electron effects in Si-MOSFETs, based on a mixture of evolutionary optimization algorithms and Monte Carlo technique. The Evolutionary Algorithm searchs for...

Corrections to the Capacitance between Two Electrodes Due to the Presence of Quantum Confined System (1998)

M. Macucci, K. Hess

We have studied the capacitance between two parallel plates enclosing a quantum confined system and its dependence on the applied voltage. The concepts of capacitance and differential capacitance are...

Inclusion of Bandstructure and Many-Body Effects in a Quantum Well Laser Simulator (1998)

F. Oyafuso, P. Von Allmen, M. Grupen, K. Hess

A self-consistent eight band k.p calculation, which takes into account strain and includes Hartree, exchange, and correlation terms (determined from a local density approximation) is incorporated...

Electronic Structure Calculations Using An Adaptive Wavelet Basis (1998)

D. A. Richie, P. Von Allmen, K. Hess, Richard M. Martin

The use of a wavelet basis can lead to efficient methods for performing ab initio electronic structure calculations of inherently localized structures. In this work wavelets are used to construct an...

LPE-GROWTH OF HIGH PURITY Ga0.47In0.53As- AND Ga0.31In0.69As0.69P0.31- LAYERS LATTICE MATCHED TO InP (1982)

Linnebach, R., Hess, K., Lösch, K., Schemmel, G.

GaxIn1-xAsyP1-y layers ( y = 0.75 and 0.69) for photodetector devices have been deposited lattice matched to InP with mirror smooth surfaces at 685 °C by liquid phase epitaxy. Layers thicker than 5...

LPE-GROWTH OF HIGH PURITY Ga0.47In0.53As- AND Ga0.31In0.69As0.69P0.31- LAYERS LATTICE MATCHED TO InP (1982)

Linnebach, R., Hess, K., Lösch, K., Schemmel, G.

GaxIn1-xAsyP1-y layers ( y = 0.75 and 0.69) for photodetector devices have been deposited lattice matched to InP with mirror smooth surfaces at 685 °C by liquid phase epitaxy. Layers thicker than 5...

LPE-GROWTH OF HIGH PURITY Ga0.47In0.53As- AND Ga0.31In0.69As0.69P0.31- LAYERS LATTICE MATCHED TO InP (1982)

Linnebach, R., Hess, K., Lösch, K., Schemmel, G.

GaxIn1-xAsyP1-y layers ( y = 0.75 and 0.69) for photodetector devices have been deposited lattice matched to InP with mirror smooth surfaces at 685 °C by liquid phase epitaxy. Layers thicker than 5...

LPE-GROWTH OF HIGH PURITY Ga0.47In0.53As- AND Ga0.31In0.69As0.69P0.31- LAYERS LATTICE MATCHED TO InP (1982)

Linnebach, R., Hess, K., Lösch, K., Schemmel, G.

GaxIn1-xAsyP1-y layers ( y = 0.75 and 0.69) for photodetector devices have been deposited lattice matched to InP with mirror smooth surfaces at 685 °C by liquid phase epitaxy. Layers thicker than 5...

LPE-GROWTH OF HIGH PURITY Ga0.47In0.53As- AND Ga0.31In0.69As0.69P0.31- LAYERS LATTICE MATCHED TO InP (1982)

Linnebach, R., Hess, K., Lösch, K., Schemmel, G.

GaxIn1-xAsyP1-y layers ( y = 0.75 and 0.69) for photodetector devices have been deposited lattice matched to InP with mirror smooth surfaces at 685 °C by liquid phase epitaxy. Layers thicker than 5...

BAND-STRUCTURE DEPENDENT IMPACT IONIZATION IN SILICON AND GALLIUM ARSENIDE (1981)

Tang, J., Shichijo, H., Hess, K., Iafrate, G.

We have performed a Monte Carlo simulation for GaAs and Si with the realistic band structure included. Steady state impact ionization rates and drift velocities under high electric fields (> 100...

LATERAL TRANSPORT IN SUPERLATTICES (1981)

Hess, K.

Theoretical and experimental results are presented for lateral transport in layered heterojunction structures. It is shown that the variability of boundary conditions (periodic or nonperiodic) gives...

BAND-STRUCTURE DEPENDENT IMPACT IONIZATION IN SILICON AND GALLIUM ARSENIDE (1981)

Tang, J., Shichijo, H., Hess, K., Iafrate, G.

We have performed a Monte Carlo simulation for GaAs and Si with the realistic band structure included. Steady state impact ionization rates and drift velocities under high electric fields (> 100...

LATERAL TRANSPORT IN SUPERLATTICES (1981)

Hess, K.

Theoretical and experimental results are presented for lateral transport in layered heterojunction structures. It is shown that the variability of boundary conditions (periodic or nonperiodic) gives...

BAND-STRUCTURE DEPENDENT IMPACT IONIZATION IN SILICON AND GALLIUM ARSENIDE (1981)

Tang, J., Shichijo, H., Hess, K., Iafrate, G.

We have performed a Monte Carlo simulation for GaAs and Si with the realistic band structure included. Steady state impact ionization rates and drift velocities under high electric fields (> 100...

LATERAL TRANSPORT IN SUPERLATTICES (1981)

Hess, K.

Theoretical and experimental results are presented for lateral transport in layered heterojunction structures. It is shown that the variability of boundary conditions (periodic or nonperiodic) gives...

BAND-STRUCTURE DEPENDENT IMPACT IONIZATION IN SILICON AND GALLIUM ARSENIDE (1981)

Tang, J., Shichijo, H., Hess, K., Iafrate, G.

We have performed a Monte Carlo simulation for GaAs and Si with the realistic band structure included. Steady state impact ionization rates and drift velocities under high electric fields (> 100...

LATERAL TRANSPORT IN SUPERLATTICES (1981)

Hess, K.

Theoretical and experimental results are presented for lateral transport in layered heterojunction structures. It is shown that the variability of boundary conditions (periodic or nonperiodic) gives...

BAND-STRUCTURE DEPENDENT IMPACT IONIZATION IN SILICON AND GALLIUM ARSENIDE (1981)

Tang, J., Shichijo, H., Hess, K., Iafrate, G.

We have performed a Monte Carlo simulation for GaAs and Si with the realistic band structure included. Steady state impact ionization rates and drift velocities under high electric fields (> 100...

LATERAL TRANSPORT IN SUPERLATTICES (1981)

Hess, K.

Theoretical and experimental results are presented for lateral transport in layered heterojunction structures. It is shown that the variability of boundary conditions (periodic or nonperiodic) gives...

The influence of patient-practitioner agreement on outcome of care.

Starfield, B, Wray, C, Hess, K, Gross, R, Birk, P S, D'Lugoff, B C

A previous study suggested that patient-practitioner agreement and follow-up in ambulatory care facilitates problem resolution as judged by patients. In this study in another medical practice,...

The influence of patient-practitioner agreement on outcome of care.

Starfield, B, Wray, C, Hess, K, Gross, R, Birk, P S, D'Lugoff, B C

A previous study suggested that patient-practitioner agreement and follow-up in ambulatory care facilitates problem resolution as judged by patients. In this study in another medical practice,...

Gaze failure, drifting eye movements, and centripetal nystagmus in cerebellar disease.

Leech, J, Gresty, M, Hess, K, Rudge, P

Three abnormalities of eye movement in man are described which are indicative of cerebellar system disorder, namely, centripetally beating nystagmus, failure to maintain lateral gaze either in...

Survival and recurrence factors in adult medulloblastoma: the M.D. Anderson Cancer Center experience from 1978 to 1998.

Kunschner, L. J., Kuttesch, J., Hess, K., Yung, W. K.

Medulloblastoma is a rare adult primary brain tumor for which limited retrospective studies are available to elucidate natural history or to guide therapy. A retrospective chart and imaging review of...

Stapedius reflex in multiple sclerosis.

Hess, K

An analysis was carried out of recordings of the crossed stapedial reflex response in a series of normal subjects and 30 patients with multiple sclerosis. Parameters measured included latency,...

Complete intersections and rational homotopy theory

Greenlees, J. P. C., Hess, K., Shamir, S.

We investigate various homotopy invariant formulations of commutative algebra in the context of rational homotopy theory. The main subject is the complete intersection condition, where we show that a...