A second look at reactive ion-beam etching and chemically-assisted ion-beam etching (1992)
The excellent anisotropy of the Reactive Ion Beam Etching (RIBE) process, its fairly high etch rate and the perfectly smooth etched surface have made it a desirable tool for III-V electronic and...
Photolytic silicon nitride deposition for gallium arsenide by 193 excimer laser radiation (1990)
Rothemund, W., Dischler, B., Eisele, K.M.
GaAs technology requires low temperature processes for any film deposition. Furthermore, processes without particle bombardment are also preferred, two conditions which photolytic deposition does...
Electrode separation and convex electrode surfaces in plasma etching (1987)
The etch rate is strongly dependent on the electrode spacing. This dependence can be applied to equalize the etch progress across a substrate wafer by employing a spherical electrode surface opposite...
Etching of SiO2 in a narrowly confined plasma of high power density (1986)
An etch process for SiO2 in a C6F14+N2 plasma at 1 Torr pressure and with a power of 10 W/ccm was examined for its etch rate dependence on gas composition, pressure, and electrode separation. Rates...
1.54-micro m electroluminescence of erbium-doped silicon grown by molecular beam epitaxy. (1985)
Pomrenke, G., Axmann, A., Schneider, J., Eisele, K.M., Haydl, W.H., Ennen, H.