Kolaklieva, L., Kakanakov, R., Stefanov, P., Cimalla, V., Maroldt, S., Ambacher, O., ...
Electrical, thermal and chemical properties of Ti/Al/Ti/Au ohmic contacts with different former Ti-Al ratio are investigated for application in GaN HEMTs. Lowest resistivity of 4.22x10(exp -5)...
Resonant piezoelectric ALGAN/GAN mems sensors in longitudinal mode operation (2009)
Brueckner, K., Niebelschütz, F., Tonisch, K., Stephan, R., Cimalla, V., Ambacher, O., ...
Free-standing piezoelectric AlGaN/GaN beam resonators have been prepared on silicon substrates using a semiconductor fabrication process. To realize the back electrode for the piezoelectric active...
Buchheim, C., Goldhahn, R., Gobsch, G., Tonisch, K., Cimalla, V., Niebelschütz, F., ...
Ga-face GaN/AlGaN/GaN heterostructures with different cap thicknesses are investigated by electroreflectance spectroscopy (ER). The voltage dependent electric field strengths of the barrier and cap...
Piezoelectric actuation of (GaN/)AlGaN/GaN heterostructures (2008)
Tonisch, K., Buchheim, C., Niebelschütz, F., Schober, A., Gobsch, G., Cimalla, V., ...
A detailed analysis of the piezoelectric response of (GaN/)AlGaN/GaN heterostructures is reported. The electromechanical properties of two types of heterostructures with an Al content of 31% are...
Brueckner, K., Niebelschütz, F., Tonisch, K., Michael, S., Dadgar, A., Krost, A., ...
Free-standing piezoelectric AlGaN/GaN beam resonators have been prepared on silicon substrates. The two-dimensional electron gas at the interface of the III/V heterostructure has been employed to act...
Isotropic dry-etching of SiC for AlGaN/GaN MEMS fabrication (2008)
Niebelschütz, F., Pezoldt, J., Stauden, T., Cimalla, V., Tonisch, K., Brueckner, K., ...
Growth of silicon nanowires on UV-structurable glass using self-organized nucleation centres (2007)
Tonisch, K., Weise, F., Stubenrauch, M., Cimalla, V., Ecke, G., Will, F., ...
Analysis of nanostructures by means of auger electron spectroscopy (2007)
Ecke, G., Cimalla, V., Tonisch, K., Lebedev, V., Romanus, H., Ambacher, O., ...
In modern nanotechnology analysis such methods are needed which are able to investigate extremely small volumes, thus surface sensitive techniques with a high spatial and depth resolution. Concerning...
Electromechanical resonances of SiC and AlN beams under ambient conditions (2005)
Brueckner, K., Förster, Ch., Tonisch, K., Cimalla, V., Ambacher, O., Stephan, R., ...
MEMS resonators offer great potential for RF sensor and filter applications. A semiconductor process has been used to prepare SiC and AlN beam resonators. The metallised beams are excited by an RF...