Keith M. Beardmore

Vacancy clustering and diffusion in silicon: Kinetic lattice Monte Carlo simulations (2006)

Haley, Benjamin P., Beardmore, Keith M., Grønbech-Jensen, Niels

Diffusion and clustering of lattice vacancies in silicon as a function of temperature, concentration, and interaction range are investigated by Kinetic Lattice Monte Carlo simulations. It is found...

Interactions Between Charged Spheres in Divalent Counterion Solution (1999)

Gronbech-Jensen, Niels, Beardmore, Keith M, Pincus, Philip

We simulate model systems of charged spherical particles in their counterion solution and measure the thermodynamic pressure and the pair distribution function from which we derive effective...

An Efficient Molecular Dynamics Scheme for Predicting Dopant Implant Profiles in Semiconductors (1999)

Beardmore, Keith M., Gronbech-Jensen, Niels

We present a highly efficient molecular dynamics scheme for calculating the concentration profile of dopants implanted in group-IV alloy, and III-V zinc blende structure materials. Our program...

An Efficient Molecular Dynamics Scheme for the Calculation of Dopant Profiles due to Ion Implantation (1999)

Beardmore, Keith M., Gronbech-Jensen, Niels

We present a highly efficient molecular dynamics scheme for calculating the concentration depth profile of dopants in ion irradiated materials. The scheme incorporates several methods for reducing...

A phenomenological electronic stopping power model for molecular dynamics and Monte Carlo simulation of ion implantation into silicon (1999)

Cai, David, Gronbech-Jensen, Niels, Snell, Charles M., Beardmore, Keith M.

It is crucial to have a good phenomenological model of electronic stopping power for modeling the physics of ion implantation into crystalline silicon. In the spirit of the Brandt-Kitagawa effective...

Direct simulation of ion beam induced stressing and amorphization of silicon (1999)

Beardmore, Keith M., Gronbech-Jensen, Niels

Using molecular dynamics (MD) simulation, we investigate the mechanical response of silicon to high dose ion-irradiation. We employ a realistic and efficient model to directly simulate ion beam...

Atomistic Modeling of Ion Irradiated Materials (1997)

Keith M. Beardmore, Niels Grønbech-Jensen

We have created practical simulation tools to examine the atomic scale processes involved in ion irradiation of materials, and we exemplify our capability with two examples relevant to semiconductor...