Junction Capacitance Techniques to Characterize Radiation Damage in Silicon. (2005)
Diebold,J. W., DeAngelis,H. M., Kimerling,L. C., Fitzgerald,J. J.
Capacitance-voltage and transient capacitance measurements were made on Schottky barrier-on-phosphorus-doped silicon diodes. Energy levels, emission coefficients, and associated introduction rates...
220 fs Er-Yb:glass laser mode-locked by a broadband low-loss Si/Ge saturable absorber (2004)
Grawert, F. J., Akiyama, S., Ilday, F. O., Liu, J., Gopinath, J. T., Shen, H. M., ...
We demonstrate femtosecond performance of an ultra-broadband high-index-contrast saturable Bragg reflector consisting of a silicon/silicon-dioxide/germanium structure that is fully compatible with...
Structure and bonding of iron-acceptor pairs in silicon (2002)
Zhao,S., Justo,J. F., Assali,L. V. C., Kimerling,L. C.
Iron-acceptor pairs (Fe-A, A = B, Al, Ga, and In) in silicon were investigated using an ionic-based model, which incorporates the valence electron cloud polarization and the lattice relaxation.Our...
Contents: Conference Summaries; Invited Presentations; Structures and Properties: Recombination Phenomena; Diffusion Processes; Dislocations and Grain Boundaries; Interfaces; Processing:...
Energy Transfer Between Shallow Centers and RE Ion Core: Er3+ Ion in Silicon, (2000)
Gregorkiewicz, T., Thao, D.T.X., Langer, J.M., Bresler, M.S., Michel, J., ...
"Ab initio" studies of hydrogen-enhanced oxygen diffusion in silicon (1999)
Capaz,R. B., Assali,L. V. C., Kimerling,L. C., Cho,K., Joannopoulos,J. D.
A novel microscopic mechanism for hydrogen-enhanced oxygen diffusion in p-doped silicon is proposed. A path for joint diffusion of O and H is obtained from an ab-initio molecular dynamics "kick"...
Impurity effects in silicon implanted with rare-earth ions, (1999)
Emtsev, V., Emtsev Jr., V.V., Poloskin, D.S., Shek, E.I., Sobolev, N.A., Michel, J., ...
Oxygen and erbium related donor centers in Czochralski grown silicon implanted with erbium, (1999)
Emtsev, V., Emtsev Jr., V.V., Poloskin, D.S., Shek, E.I., Sobolev, N.A., Michel, J., ...
Rare earth impurities and impurity-related centers in silicon, (1999)
Emtsev, V., Emtsev Jr., V.V., Poloskin, D.S., Shek, E.I., Sobolev, N.A., Michel, J., ...
Excitation Mechanism of Er in Si Studied with a Free-electron Laser (1999)
Gregorkiewicz, T., Tsimperidis, I., Thao, D.T.X., Michel, J., ...
Photonic Crystal HIDE Materials Engineering (1998)
Milestone results have been achieved in the design, processing and testing of dielectric and metallodielectric composite materials for the control of IR emissivity. Our theoretical analyses have...
Silicon Optoelectronics. (1997)
This silicon optoelectronics program is the first comprehensive investigation of a silicon compatible, optical interconnection technology. The objective of the program is to establish processes,...
Mechanism of copper deposition on silicon from dilute hydrofluoric acid solution (1997)
Platero, M, Black, K. A, Reddy, A. J, Michel, J, Kimerling, L. C
Growth of epitaxial YbBa2Cu3O7 superconductor by liquid-gas-solidification processing (1988)
Chen, H.S., Liou, Sy_Hwang, Kortan, A.R., Kimerling, L.C.
Superconductive films of YbBa2Cu3O7 have been epitaxially grown on SrTiO3 substrate by a novel liquid-gas-solidification process. A layer of metallic YbBa2Cu3 melt was coated on the substrate and in...
Compensation of germanium by radiation defects. (1969)
Massachusetts Institute of Technology. Dept. of Metallurgy and Materials Science. Thesis. 1969. Ph.D.
Compensation of germanium by radiation defects. (1969)
Massachusetts Institute of Technology. Dept. of Metallurgy and Materials Science. Thesis. 1969. Ph.D.
Initial investigations of the metallurgical magnetic core logic element (MEMACLE). (1965)
Massachusetts Institute of Technology. Dept. of Metallurgy. Thesis. 1965. B.S.