Alloy Splitting of Gold and Platinum Acceptor Levels in SiGe L. Dobaczewski, (2007)
L. Dobaczewski, K. Goœciñski, K. Bonde Nielsen, A. Nyl, Sted Larsen, ...
rates of carriers from the defect and in optical absorption frequencies. This has the consequence that a deep-center energy level, upon alloying, appears to split into a manifold of components. The...
A. R. Peaker, L. Dobaczewski, V. Markevich, O. Andersen, L. Rubaldo, ...
Several recent studies indicate that there are major differences in the defect population between ion implanted and electron damaged silicon. The differences are more marked as the ion mass and the...
High-resolution DLTS of vacancy–donor pairs in P-, As- and Sb-doped silicon (2006)
Auret, F.D., Peaker, A.R., Markevich, V.P., Dobaczewski, L., Gwilliam, R.M.
We report results from an experiment designed to characterize, by high-resolution (Laplace) DLTS, the electronic properties of electron radiation induced E-centers in Si associated with P, Sb and As....
High-resolution DLTS of vacancy–donor pairs in P-, As- and Sb-doped silicon (2006)
Auret, F.D., Peaker, A.R., Markevich, V.P., Dobaczewski, L., Gwilliam, R.M.
We report results from an experiment designed to characterize, by high-resolution (Laplace) DLTS, the electronic properties of electron radiation induced E-centers in Si associated with P, Sb and As....
Stable and metastable configurations of iron atoms in SiGe alloys (2005)
Kolkovsky, V., Mesli, A., Dobaczewski, L., Abrosimov, N.V., Zytkiewicz, Z.R., Peaker, A.R
The antimony-vacancy defect in p-type germanium (2005)
Lindberg, C.E., Hansen Lundsgaard, J., Bomholt, P., Mesli, A., Nielsen Bonde, K., Nylandsted, A.Larsen, ...
Saddle point for oxygen reorientation in the vicinity of a silicon vacancy (2003)
Dobaczewski, L., Andersen, O., Rubaldo, L., Gościński, K., Markevich, V. P., Peaker, A. R., ...
Electrical activity of carbon-hydrogen centers in Si (2002)
Andersen, O., Peaker, A.R., Dobaczewski, L., Bonde Nielsen, K., Hourahine, B., Jones, R., ...
The electrical activity of Cs-H defects in Si has been investigated in a combined modeling and experimental study. High-resolution Laplace capacitance spectroscopy with the uniaxial stress technique...
Electrical activity of carbon-hydrogen centers in Si (2002)
Andersen, O., Peaker, A.R., Dobaczewski, L., Bonde Nielsen, K., Hourahine, B., Jones, R., ...
The electrical activity of Cs-H defects in Si has been investigated in a combined modeling and experimental study. High-resolution Laplace capacitance spectroscopy with the uniaxial stress technique...
Electrical activity of carbon-hydrogen centers in Si (2002)
Andersen, O., Peaker, A.R., Dobaczewski, L., Bonde Nielsen, K., Hourahine, B., Jones, R., ...
The electrical activity of Cs-H defects in Si has been investigated in a combined modeling and experimental study. High-resolution Laplace capacitance spectroscopy with the uniaxial stress technique...
Piezoscopic deep-level transient spectroscopy studies of the silicon divacancy (2002)
Dobaczewski, L., Gościński, K., Żytkiewicz, Z. R., Nielsen, K. B., Rubaldo, L., Andersen, O., ...
It is shown that the divacancy in silicon in the diamagnetic doubly negative charge state has a static trigonal symmetry with inward breathing mode lattice relaxation. There is no measurable...
Gold-hydrogen complexes in silicon. (1999)
Rubaldo, L., Deixler, P., Hawkins, I. D., Terry, J., Maude, D. K., Portal, J. C., ...
Hydrogen reactions with electron irradiation damage in silicon. (1999)
Peaker, A. R., Evans-Freeman, J. H., Kan, P. Y. Y., Rubaldo, L., Hawkins, I. D., Vernon-Parry, K. D., ...