Vdovin, E. E., Makarovsky, O., Patane, A., Eaves, L., Khanin, Yu. N.
We show that the resonant tunnel current through a single energy level of an individual quantum dot within an ensemble of dots is strongly sensitive to photoexcited holes that become bound in the...
Electron coherence length and mobility in highly mismatched III-N-V alloys. (2008)
Patane, A., Allison, G., Eaves, L., Kozlova, N. V., Zhuang, Q. D., Krier, A., ...
We investigate the quantum coherence length, L, and mobility of conduction electrons in the dilute nitride alloy GaAs1−xNx. Analysis of the negative magnetoresistance using weak localization theory...
Polygonal excitations of spinning and levitating droplets (2008)
The shape of a weightless spinning liquid droplet is governed by the balance between the surface tension and centrifugal forces. The axisymmetric shape for slow rotation becomes unstable to a...
Coulomb pseudogap in elastic 2D-2D electron tunneling in a quantizing magnetic field (2008)
Popov, V. G., Makarovskii, O. N., Renard, V., Eaves, L.
The electron tunneling is experimentally studied between two-dimensional electron gases (2DEGs) formed in a single-doped-barrier heterostructure in the magnetic fields directed perpendicular to the...
Jungwirth, T., Sinova, Jairo, MacDonald, A. H., Gallagher, B. L., Novak, V., Edmonds, K. W., ...
We discuss the character of states near the Fermi level in Mn doped GaAs, as revealed by a survey of dc transport and optical studies over a wide range of Mn concentrations. A thermally activated...
Bifurcations and chaos in semiconductor superlattices with a tilted magnetic field (2007)
Balanov, A. G., Fowler, D., Patanè, A., Eaves, L., Fromhold, T. M.
We study the effects of dissipation on electron transport in a semiconductor superlattice with an applied bias voltage and a magnetic field that is tilted relative to the superlattice axis.In...
Vdovin, E. E., Khanin, Yu. N., Makarovsky, O., Patane, A., Eaves, L., Henini, M., ...
We investigate the effect of an applied magnetic field on resonant tunneling of electrons through the bound states of self-assembled InAs quantum dots (QDs) embedded within an (AlGa)As tunnel...
De Carvalho, H. B., Lopez-Richard, V., Camps, I., Gobato, Y. Galvao, Marques, G. E., ...
We report experimental evidence of excitonic spin-splitting, in addition to the conventional Zeeman effect, produced by a combination of the Rashba spin-orbit interaction, Stark shift and charge...
Current flow and energy dissipation in low-dimensional semiconductor superlattices (2006)
Fowler, D., Patané, A., Ignatov, A., Eaves, L., Henini, M., Mori, N., ...
By applying high magnetic and electric fields to a semiconductor superlattice (SL) we create quasi-one-dimensional or quasi-zero-dimensional electronic states. This reduced dimensionality restricts...
Strong effect of resonant impurities on Landau-level quantization (2006)
Allison, G., Mori, N., Patanè, A., Endicott, J., Eaves, L., Maude, D. K., ...
We investigate experimentally the effect of a random distribution of nitrogen (N) impurities on the Landau-level spectrum of a GaAs quantum well. Our magnetotunneling study reveals complex and...
Spin splitting of X-related donor impurity states in an AlAs barrier (2005)
Vdovin, E. E., Khanin, Yu. N., Eaves, L., Henini, M., Hill, G.
We use magnetotunneling spectroscopy to observe the spin splitting of the ground state of an X-valley-related Si-donor impurity in an AlAs barrier. We determine the absolute magnitude of the...
Excited two-dimensional magnetopolaron states in quantum well of resonant tunnel junction (2005)
Ivanov, D. Yu., Chukalina, M. V., Takhtamirov, E. G., Dubrovskii, Yu. V., Eaves, L., Volkov, V. A., ...
Tunnel spectroscopy is used to probe the electronic structure in GaAs quantum well of resonant tunnel junction over wide range of energies and magnetic fields normal to layers. Spin degenerated high...
Dubrovskii, Yu. V., Volkov, V. A., Eaves, L., Vdovin, E. E., Makarovskii, O. N., ...
Magnetic field suppression of the tunneling between disordered 2D electron systems in GaAs around zero bias voltage has been studied. Magnetic field B normal to the layers induces a dip in the...
Trion formation in narrow GaAs quantum well structures (2005)
Teran, F. J., Eaves, L., Mansouri, L., Buhmann, H., Maude, D. K., Potemski, M., ...
Tunneling between two-dimensional hole layers in GaAs (2005)
Morozova, E. N., Renard, V., Dubrovskii, Y. V., Volkov, V. A., Eaves, L., Portal, J. C., ...
Godefroo, Stefanie; U0043928, Maes, J, Hayne, Manus; U0009263, Moshchalkov, VV, Henini, M, Pulizzi, F, ...
We have used photoluminescence in pulsed (less than or equal to50 T) and dc (less than or equal to12 T) magnetic fields to investigate the influence of substrate orientation and growth interruption...
Magneto-photoluminescence of stacked self-assembled InAs/GaAs quantum dots (2004)
Maes, J, Hayne, Manus; U0009263, Henini, M, Pulizzi, F, Patane, A, Eaves, L, ...
We studied ten-fold stacked layers of self-assembled InAs/GaAs quantum dots by photoluminescence in pulsed magnetic fields. When the interlayer distance is reduced from 9.8 to 5.5 nm, a doubling of...
Informant disagreement for separation anxiety disorder (2004)
Rutter, M, Pickles, A, Angold, A, Maes, H, Silberg, J, ...
Objective: To characterize informant disagreement for separation anxiety disorder (SAD). Method: The sample comprised 2,779 8- to 17-year-old twins from a community-based registry. Children and their...
Magnetic-field-induced suppression of electronic conduction in a superlattice (2004)
Patanè, A., Mori, N., Fowler, D., Eaves, L., Henini, M., Maude, D. K., ...
Soft-hard tunneling gap transition induced by magnetic field in disordered 2DES (2004)
Dubrovskii, Y. V., Volkov, V. A., Eaves, L., Makarovskii, O. N., Henini, M., Portal, J. C., ...
Interband-cyclotron anomaly in tunnel conductance of double-barrier structure (2004)
Ivanov, D. Y., Renard, V., Dubrovskii, Y. V., Portal, J. C., Eaves, L., Henini, M.
Surface Instabilities on Liquid Oxygen in an Inhomogeneous Magnetic Field (2003)
Catherall, A. T., Benedict, Keith A, King, P. J., Eaves, L.
Liquid oxygen exhibits surface instabilities when subjected to a sufficiently strong magnetic field. A vertically oriented magnetic field gradient both increases the magnetic field value at which the...
Martin, A. M., Benedict, K. A., Sheard, F. W., Eaves, L.
In samples used to maintain the US resistance standard the breakdown of the dissipationless integer quantum Hall effect occurs as a series of dissipative voltage steps. A mechanism for this type of...
Maes, J, Henini, M, Hayne, Manus; U0009263, Patane, A, Pulizzi, F, Eaves, L, ...
We have investigated the formation of InAs quantum dots grown by molecular beam epitaxy on GaAs substrates with different orientations using photoluminescence spectroscopy in pulsed magnetic fields...
Popov, V. G., Dubrovskii, Yu. V., Dubonos, S. V., Eaves, L., Henini, M.
Current oscillations in the negative differential conductance region of resonant tunneling diodes with different lateral pattern and size versus perpendicular to the tunneling current magnetic field...
Nonlinear hole transport through a submicron-size channel (2003)
Makarovsky, O., Neumann, A., Martin, A. M., Turyanska, L., Patané, A., Eaves, L., ...
We investigate hole transport through a submicron-size channel fabricated from a modulation-doped p-type GaAs/(AlGa)As single- quantum-well heterostructure. The intense electric field in the channel...
Tunnel gaps in the two-dimensional electron system in a magnetic field (2003)
Dubrovskii, Y. V., Main, P. C., Eaves, L., Volkov, V. A., Ivanov, D. Y., Vdovin, E. E., ...
Maes, J, Hayne, Manus; U0009263, Moshchalkov, VV, Patane, A, Henini, M, Eaves, L, ...
We have investigated the substrate orientation-dependence of InAs/GaAs quantum dot growth by photoluminescence spectroscopy in very high magnetic fields. An abrupt change from one-dimensional to...
A Model for the Voltage Steps in the Breakdown of the Integer Quantum Hall Effect (2002)
Martin, A. M., Benedict, K. A., Sheard, F. W., Eaves, L.
In samples used to maintain the US resistance standard the breakdown of the dissipationless integer quantum Hall effect occurs as a series of dissipative voltage steps. A mechanism for this type of...
Electronic Structure of Stacked Self-Organized InAs/GaAs Quantum Dots (2002)
Brunkov, P. N., Patane, A., Levin, A., Polimeni, A., Eaves, L.
Capacitance and conductance-voltage characteristics have been measured at various frequencies and temperatures for a Schottky barrier structure containing three sheets of self-organized InAs quantum...
Quantum-Well Plasma Instability in the Resonant Tunneling Regime (2002)
Feiginov, M. N., Volkov, V. A., Eaves, L., Maan, J. K.
The resonant tunneling is accompanied by the accumulation of the 2D electrons in the well between the barriers of the double-barrier heterostructures. It leads to the I-V curve of Z-type in the...
Popov, V. G., Dubrovskii, Yu. V., Wang, K. L., Eaves, L., Maan, J. C.
The current instabilities in the negative differential conductance region of the resonance tunneling diode have been thoroughly studied at different parameters of the external circuit. The...
Vdovin, E. E., Levin, A., Patane, A., Eaves, L., Main, P. C.
We use magnetotunnelling spectroscopy as a non-invasive probe to produce two-dimensional spatial images of the probability density of an electron confined in a self-assembled semiconductor quantum...
Unconventional Landan States in the Quantum Well with Embedded Self-Arranged Quantum Dots (2002)
Dubrovskii, Yu. V., Volkov, V. A., Vdovin, E. E., Eaves, L., Main, P. C.
It have been found that the presence of InA self-arranged quantum dots strongly modify the structure of Landau levels in a host GaAs quantum well.
Double Injection Currents in p-i-n Diodes Incorporating Self-Assembled Quantum Dots (2002)
Belyaev, A. E., Patane, A., Eaves, L., Main, P. C., Henini, M.
We study p-i-n diodes incorporating InAs/ AlAs self-assembled quantum dots (QDs) to probe the electron and hole levels of the dots. Comparative analysis of capacitance-voltage (C-V), current-voltage...
Modulation of the Optical Absorption in Self-Organized InAs/GaAs Quantum Dots (2002)
Brunkov, P. N., Patane, A., Levin, A., Eaves, L., Main, P. C.
Capacitance and photocurrent spectroscopy are used to investigate a Schottky barrier structure containing a single layer of self-organized InA/ GaAs quantum dots. We show that applying a bias to the...
Dubrovskii, Y. V., Hill, R., Volkov, V. A., Main, P. C., Eaves, L., Popov, V. G., ...
We have investigated equilibrium tunnelling between disordered two-dimensional electron systems at temperatures below 0.3 K over a wide range of magnetic field. B. applied perpendicular to the...
Photoresponse spectra in p-i-n diodes containing quantum dots (2002)
Belyaev, A. E., Vitusevich, S. A., Eaves, L., Main, P. C., Henini, M., Förster, A., ...
This version is available at the following Publisher URL: http://dx.doi.org/10.1088/0957-4484/13/1/320
Vdovin, E. E., Khanin, Yu. N., Veretennikov, A. V., Levin, A., Patane, A., Dubrovskii, Yu. V., ...
We use magnetotunnelling spectroscopy as a non-invasive probe to produce two-dimensional spatial images of the probability density of an electron confined in a self-assembled semiconductor quantum...
Dubrovskii, Y. V., Vdovin, E. E., Patané, A., Brounkov, P. N., Larkin, I. A., Eaves, L., ...
We investigate resonant tunnelling in GaAs/(AlGa)As double- barrier resonant-tunnelling diodes in which a single layer of InAs self-assembled quantum dots is embedded in the centre of the GaAs...
Unconventional Landau states in the quantum well with embedded self-arranged quantum dots (2001)
Dubrovskii, Y. V., Volkov, V. A., Vdovin, E. E., Eaves, L., Main, P. C., Maude, D. K., ...
High pressure as a tool to study electron localization (2001)
Hill, R. J. A., Itskevich, I. E., Stoddart, S. T., Murphy, H. M., Thornton, A. S. G., Main, P. C., ...
Natural of the localized phase in a two-dimensional electron system (2001)
Itskevich, I. E., Hill, R. J. A., Stoddart, S. T., Murphy, H. M., Thornton, A. S. G., Main, P. C., ...
Breakdown of the quantum Hall effect (2001)
Maude, D. K., Rigal, L. B., Desrat, W., Potemski, M., Portal, J. C., Eaves, L., ...
Tunneling spectroscopy of quasi 2D magnetoplasmon (2001)
Volkov, V. A., Takhtamirov, E., Dubrovskii, Y. V., Ivanov, D. Y., Eaves, L., Main, P. C., ...
Studies of electrons properties of disordered of 2DE system by resonant tunnelling (2001)
Dubrovskii, Y. V., Volkov, V. A., Vdovin, E. E., Ivanov, D. Y., Popov, V. G., Khanin, Y. N., ...
Interaction between Landau levels of different two-dimensional subbands in GaAs (2001)
Ivanov, D. Y., Takhtamirov, E., Dubrovskii, Y. V., Volkov, V. A., Vdovin, E. E., Eaves, L., ...
Numerical Studies of Miniband Conduction in Quasi-One-Dimensional Superlattices (2001)
N. Mori, C. Hamaguchi, L. Eaves, P. C. Main
Monte Carlo simulations of electron motion in GaAs/A1As superlattices with narrow mini-band width are performed to investigate the effect of a strong magnetic field on miniband conduction. In the...
A phase diagram for the breakdown of the odd integer quantum Hall effect (2000)
Rigal, L. B., Maude, D. K., Potemski, M., Portal, J. C., Eaves, L., Wasilewski, Z. R., ...
The influence of genetic factors and life stress on depression among adolescent girls (1999)
Pickles, A, Rutter, M, Hewitt, J, Simonoff, E, Maes, H, ...
Background: The possible causes of greater depression among adolescent girls were investigated by examining variation in the influence of genetic and environmental risk factors among 182 prepubertal...
The influence of high magnetic fields and electron transport in semiconductor superlattices. (1999)
Kido, G., Eaves, L., Murphy, H. M., Nogaret, A., Stoddart, S. T., Main, P. C., ...
Breakdown of the quantum Hall effect: a phase diagram? (1999)
Kido, G., Maude, D. K., Rigal, L. B., Eaves, L., Potemski, M., Wasilewski, Z. R., ...
Phase diagram for the breakdown of the quantum Hall effect. (1999)
Rigal, L. B., Maude, D. K., Potemski, M., Portal, J. C., Eaves, L., Wasilewski, Z. R., ...
Optical and Electrical Properties of Vanadium-Doped GaAs. (1998)
Ulrici, W., Freidland, K., Eaves, L., Halliday, D. P.
The results of optical absorption, luminescence, and temperature- dependent Hall-effect measurements on GaAs:V, p-type GaAs:V:Zn, and n-type GaAs:V:Si grown by LEC-technique are reported. It is found...
S-shaped current bistability in a bipolar resonant tunneling diode. (1998)
Kuhn, O., Genoe, J., Maude, D. K., Portal, J. C., Eaves, L., Henini, M., ...
Magneto-acoustic phonon antiresonances in Wannier-Stark superlattices. (1998)
Nogaret, A., Eaves, L., Main, P. C., Henini, M., Maude, D. K., Portal, J. C., ...
Skyrmion excitations in the limit of vanishing Landé g-factor. (1998)
Maude, D. K., Marty, S., Rigal, L. B., Potemski, M., Portal, J. C., Wasilewski, Z. W., ...
Eaves, L, Simonoff, E, Maes, H, Murrelle, L, Pickles, A, ...
Many-body blockade of resonant tunneling of two-dimensional electrons (1997)
Henini, M., Main, P.C., Nogaret, A., Eaves, L., Maan, J.C., Geim, A.K., ...
Magneto-optical study of correlated electron-hole layers in single-barrier heterostructures (1997)
Henini, M., Eaves, L., Maan, J.C., Geim, A.K., Christianen, P.C.M., Parlangeli, A.
Tunneling spectroscopy of hole plasmons in a valence-band quantum well (1996)
Neves, B. R., Foster, T. J., Eaves, L., Main, P. C., Henini, M., Fisher, D. J., ...
We investigate the current-voltage characteristics of a p-doped resonant tunneling diode. In the voltage range slightly above the bias corresponding to resonant tunneling of holes into the first...
Tunneling spectroscopy of hole plasmons in a valence-band quantum well (1996)
Neves, B. R., Foster, T. J., Eaves, L., Main, P. C., Henini, M., Fisher, D. J., ...
We investigate the current-voltage characteristics of a p-doped resonant tunneling diode. In the voltage range slightly above the bias corresponding to resonant tunneling of holes into the first...
Rutter, M, Meyer, J, Maes, H, Hewitt, J, Simonoff, E, ...
Structural equation models were applied to the maternal ratings of 265 MZ and 163 DZ male-male, 347 MZ and 160 DZ female-female, and 262 male-female twin pairs, aged 8-16 years, who participated in...
D- centers probed by resonant tunneling spectroscopy (1996)
Henini, M., Sakai, J.W., Main, P.C., Foster, T.J., Eaves, L., Mori, N., ...
Resonant tunnelling through D- states (1996)
Main, P.C., Sakai, J.W., Henini, M., McDonnell, P., Eaves, L., Mori, N., ...
Tunneling spectroscopy of hole plasmons in a valence-band quantum well (1996)
Neves, B. R., Foster, T. J., Eaves, L., Main, P. C., Henini, M., Fisher, D. J., ...
We investigate the current-voltage characteristics of a p-doped resonant tunneling diode. In the voltage range slightly above the bias corresponding to resonant tunneling of holes into the first...
Meyer, J, Pickles, A, Simonoff, E, Eaves, L, Hewitt, J, ...
The examination of heterogeneity in antisocial behaviour was accomplished by applying latent class analytic methods to multivariate categorical data on 389 same-sex male twins, aged 11 to 16 from the...
Tunneling spectroscopy of hole plasmons in a valence-band quantum well (1996)
Neves, B. R., Foster, T. J., Eaves, L., Main, P. C., Henini, M., Fisher, D. J., ...
We investigate the current-voltage characteristics of a p-doped resonant tunneling diode. In the voltage range slightly above the bias corresponding to resonant tunneling of holes into the first...
Fisher, T. A., Buckle, P. D., Simmonds, P. E., Teissier, R. J., Skolnick, M. S., White, C. R., ...
A strained InyGa1-yAs layer is incorporated adjacent to the emitter barrier of an AlxGa1-xAs/GaAs/AlxGa1-xAs double-barrier resonant-tunneling structure (DBRTS), so that it forms a prewell for the...
Fisher, T. A., Buckle, P. D., Simmonds, P. E., Teissier, R. J., Skolnick, M. S., White, C. R., ...
A strained InyGa1-yAs layer is incorporated adjacent to the emitter barrier of an AlxGa1-xAs/GaAs/AlxGa1-xAs double-barrier resonant-tunneling structure (DBRTS), so that it forms a prewell for the...
Plasmon assisted resonant tunneling in a double barrier heterostructure (1994)
Zhang, C., Lerch, M. L., Martin, A. D., Simmonds, P. E., Eaves, L.
When a double barrier semiconductor structure is biased near a tunneling resonance, charge can accumulate in the quantum well. Coupling between this two dimensional electron gas and the tunneling...
Plasmon assisted resonant tunneling in a double barrier heterostructure (1994)
Zhang, C., Lerch, M. L., Martin, A. D., Simmonds, P. E., Eaves, L.
When a double barrier semiconductor structure is biased near a tunneling resonance, charge can accumulate in the quantum well. Coupling between this two dimensional electron gas and the tunneling...
Fisher, T. A., Buckle, P. D., Simmonds, P. E., Teissier, R. J., Skolnick, M. S., White, C. R., ...
A strained InyGa1-yAs layer is incorporated adjacent to the emitter barrier of an AlxGa1-xAs/GaAs/AlxGa1-xAs double-barrier resonant-tunneling structure (DBRTS), so that it forms a prewell for the...
Plasmon assisted resonant tunneling in a double barrier heterostructure (1994)
Zhang, C., Lerch, M. L., Martin, A. D., Simmonds, P. E., Eaves, L.
When a double barrier semiconductor structure is biased near a tunneling resonance, charge can accumulate in the quantum well. Coupling between this two dimensional electron gas and the tunneling...
Fisher, T. A., Buckle, P. D., Simmonds, P. E., Teissier, R. J., Skolnick, M. S., White, C. R., ...
A strained InyGa1-yAs layer is incorporated adjacent to the emitter barrier of an AlxGa1-xAs/GaAs/AlxGa1-xAs double-barrier resonant-tunneling structure (DBRTS), so that it forms a prewell for the...
Plasmon assisted resonant tunneling in a double barrier heterostructure (1994)
Zhang, C., Lerch, M. L., Martin, A. D., Simmonds, P. E., Eaves, L.
When a double barrier semiconductor structure is biased near a tunneling resonance, charge can accumulate in the quantum well. Coupling between this two dimensional electron gas and the tunneling...
Celeste, A., Portal, J.C., Eaves, L., Alves, E.S., Foster, T.J., Leadbeater, M. L., ...
Nous avons étudié les propriétés électroniques d'une série de structures à double barrière, dont la largeur du puits varie de 5 à 6 nm. La bistabilité observée couramment dans les...
Celeste, A., Portal, J.C., Eaves, L., Alves, E.S., Foster, T.J., Leadbeater, M. L., ...
Nous avons étudié les propriétés électroniques d'une série de structures à double barrière, dont la largeur du puits varie de 5 à 6 nm. La bistabilité observée couramment dans les...
Celeste, A., Portal, J.C., Eaves, L., Alves, E.S., Foster, T.J., Leadbeater, M. L., ...
Nous avons étudié les propriétés électroniques d'une série de structures à double barrière, dont la largeur du puits varie de 5 à 6 nm. La bistabilité observée couramment dans les...
Payling, C., Alves, E., Eaves, L., Foster, T., Henini, M., Hughes, O., ...
Negative differential conductivity (NDC) and current bistability in a resonant tunnelling device are investigated by examining the oscillatory structure in the magnetotunnelling current for J ||B....
Payling, C., Alves, E., Eaves, L., Foster, T., Henini, M., Hughes, O., ...
Negative differential conductivity (NDC) and current bistability in a resonant tunnelling device are investigated by examining the oscillatory structure in the magnetotunnelling current for J ||B....
Payling, C., Alves, E., Eaves, L., Foster, T., Henini, M., Hughes, O., ...
Negative differential conductivity (NDC) and current bistability in a resonant tunnelling device are investigated by examining the oscillatory structure in the magnetotunnelling current for J ||B....
Barker, J. R., Mudares, M., Snell, B. R., Guimaraes, P. S. S., Taylor, D. C., Eaves, L., ...
It is shown that very high precision hot-electron magnetophonon experiments made on n+n−n+-GaAs sandwich device structures which are customized for magnetoresistance measurements can be very...