Yanev, V., Erlbacher, T., Rommel, M., Bauer, A.J., Frey, L.
High-k dielectrics exhibit strong variations in their electrical characteristics on the nanometer scale due to morphology alteration. Therefore, electrical measurement techniques with nanometer...
Improved manufacturability of ZrO2 MIM capacitors by process stabilizing HfO2 addition (2009)
Müller, J., Böscke, T.S., Schröder, U., Reinicke, M., Oberbeck, L., Zhou, D., ...
A broad compositional range of the dielectric material Zr1-xHfxO2 was evaluated with respect to its applicability in DRAM storage capacitors. The paper reports on phase composition, crystallization...
Lanthanum implantation for threshold voltage control in metal/high-k devices (2009)
Fet, A., Häublein, V., Bauer, A.J., Ryssel, H., Frey, L.
In this paper the tuning of the n-metal effective work function by implantation of lanthanum is demonstrated. The effect of implantation and thermal annealing on the device flat-band voltage is...
Rommel, M., Jambreck, J., Ebm, C., Platzgummer, E., Bauer, A., Frey, L.
Todays focused ion beam (FIB) systems enable the fast and flexible fabrication of 3D structures with dimenFocused ion beam; FIB; FIB patterning; patterning simulation; patterning strategysions well...
Rommel, M., Jambreck, J., Ebm, C., Platzgummer, E., Bauer, A., Frey, L.
Todays focused ion beam (FIB) systems enable the fast and flexible fabrication of 3D structures with dimenFocused ion beam; FIB; FIB patterning; patterning simulation; patterning strategysions well...
Schmitt, H., Rommel, M., Bauer, A.J., Frey, L., Bich, A., Eisner, M., ...
The fabrication of microlenses is of great interest for several applications in the field of optics like wafer level cameras, homogenization of light, and coupling of light into glass fibers....
Schmitt, H., Rommel, M., Bauer, A.J., Frey, L., Bich, A., Eisner, M., ...
The fabrication of microlenses is of great interest for several applications in the field of optics like wafer level cameras, homogenization of light, and coupling of light into glass fibers....
An AzTEC 1.1 mm Survey of the GOODS-N Field I: Maps, Catalogue, and Source Statistics (2008)
Perera, T. A., Chapin, E. L., Austermann, J. E., Scott, K. S., Wilson, G. W., Halpern, M., ...
We have conducted a deep and uniform 1.1 mm survey of the GOODS-N field with AzTEC on the James Clerk Maxwell Telescope (JCMT). Here we present the first results from this survey including maps, the...
Erlbacher, T., Jank, M.P.M., Ryssel, H., Frey, L., Engl, R., Walter, A., ...
Deposition methods for the self-aligned growth of organometallic charge-transfer complexes for use as a conductivity-modulated, nonvolatile switching layer are presented. First, a deposition from...
Erlbacher, T., Jank, M.P.M., Ryssel, H., Frey, L., Engl, R., Walter, A., ...
Deposition methods for the self-aligned growth of organometallic charge-transfer complexes for use as a conductivity-modulated, nonvolatile switching layer are presented. First, a deposition from...
Häublein, V., Frey, L., Ryssel, H.
Contamination due to mass interferences generally leads to severe problems in ion implantation. To be able to prevent this kind of contamination, the cause of the respective mass interference has to...
High-speed superconducting single photon detectors for innovative astronomical applications (2008)
Feautrier, P, Le Coarer, E, De Lamaestre, R Espiau, Cavalier, P, Maingault, L, Villegier, J-C, ...
Superconducting Single Photon Detectors (SSPD) are now mature enough to provide extremely interesting detector performances in term of sensitivity, speed, and geometry in the visible and near...
Lemberger, M., Schön, F., Dirnecker, T., Jank, M.P.M., Frey, L., Ryssel, H., ...
In this work, hafnium silicate layers on Si and Ge wafers for gate dielectric application in metal-oxide-semiconductor devices are investigated. Films are deposited by metal-organic (MO)CVD using the...
UV nanoimprint materials: Surface energies, residual layers, and imprint quality (2007)
Schmitt, H., Frey, L., Ryssel, H., Rommel, M., Lehrer, C.
UV nanoimprint lithography is attracting more and more interest, because it has the potential of becoming a high-resolution, low-cost patterning technique. The availability of suitable UV curing...
UV nanoimprint materials: Surface energies, residual layers, and imprint quality (2007)
Schmitt, H., Frey, L., Ryssel, H., Rommel, M., Lehrer, C.
UV nanoimprint lithography is attracting more and more interest, because it has the potential of becoming a high-resolution, low-cost patterning technique. The availability of suitable UV curing...
Ion implantation and annealing for an efficient N-doping of TiO2 nanotubes (2006)
Ghicov, A., Macak, J.M., Tsuchiya, H., Kunze, J., Haeublein, V., Frey, L., ...
Self-organized anodic titaniananotube layers were doped with nitrogen successfully using ion implantation. Photoelectrochemical measurements combined with XRD measurements show that the damage...
Nanoscale morphology and photoemission of arsenic implanted germanium films (2006)
Petö, G., Khanh, N.Q., Horvath, Z.E., Molnar, G., Gyulai, J., Kotai, E., ...
Germanium films of 140 nm thickness deposited onto Si substrate were implanted with 70 keV arsenic ions with a dose of 2.5x10(14) cm(-2). The morphology of the implanted films was determined by...
Simulation of ion beam direct structuring for 3D nanoimprint template fabrication (2006)
Platzgummer, E., Biedermann, A., Langfischer, H., Eder-Kapl, S., Kuemmel, M., Cernusca, S., ...
Annealing of aluminum implanted 4H-SiC: Comparison of furnace and lamp annealing (2005)
Rambach, M., Bauer, A.J., Frey, L., Friedrichs, P., Ryssel, H.
Furnace annealing and lamp annealing of aluminum implanted layers in 4H silicon carbide (SiC) were investigated with respect to surface degradation and electrical parameters. A sheet resistance of...
Rommel, M., Groß, M., Frey, L., Bauer, A.J., Ryssel, H.
In this work, a new method is presented for a direct and fast extraction of effective interface state densities Dit,eff at semiconductor insulator interfaces from photocurrent measurements. A...
Rommel, M., Groß, M., Ettinger, A., Lemberger, M., Bauer, A.J., Frey, L., ...
In this work, silicon insulator interfaces are characterized by detailed photocurrent analysis. Results obtained for a variety of samples with different insulator layers and layer thicknesses are...
Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor (2005)
Lemberger, M., Paskaleva, A., Zurcher, S., Bauer, A.J., Frey, L., Ryssel, H.
Lehrer, C., Frey, L., Petersen, S., Ryssel, H., Schäfer, M., Sulzbach, T.
Material processing by focused ion-beam milling and electron-beam-induced deposition was applied for the integration of field emitters into scanning probe microscopy (SPM) sensors. Geometry of the...
Investigation of rapid thermal annealed pn-junctions in SiC (2004)
Rambach, M., Weiss, R., Frey, L., Bauer, A.J., Ryssel, H.
Rapid thermal annealing (RTA) of 4H-silicon carbide (SiC) is investigated for the activation of Al implanted layers. The lowest sheet resistances achieved for an Al doping of 1(.)10(15)cm(-2) were...
Design, fabrication and characterization of a microactuator for nebulization of fluids (2004)
Yasenov, N., Berberich, S.E., Frey, L., Ryssel, H.
The nebulization of fluids plays an important role in the medical treatment of several diseases. The most important aspect of the nebulization of medicaments is the diameter of the generated...
Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors (2003)
Lemberger, M., Paskaleva, A., Zürcher, S., Bauer, A.J., Frey, L., Ryssel, H.
Zirconium silicate films obtained from novel MOCVD precursors (2003)
Lemberger, M., Paskaleva, A., Zürcher, S., Bauer, A.J., Frey, L., Ryssel, H.
Influence of antenna shape and resist patterns on charging damage during ion implantation (2003)
Dirnecker, T., Bauer, A.J., Beyer, A., Frey, L., Henke, D., Ruf, A., ...
Surface properties and electrical characteristics of rapid thermal annealed 4H-SiC (2003)
Bauer, A.J., Rambach, M., Frey, L., Weiss, R., Rupp, R., Friedrichs, P., ...
Nanoscale effects in focused ion beam processing (2003)
Frey, L., Lehrer, C., Ryssel, H.
Focused ion beams with diameters of 8 to 50 nm are used for material processing in the nanoscale regime. In this paper, effects of the ion beam-solid interaction determining the formation of small...
Trench sidewall doping for lateral power devices (2003)
Berberich, S.E., Bauer, A.J., Frey, L., Ryssel, H.
Sidewall doping of trenches with a high aspect ratio and a high grade of anisotropy (90° +- 0.5°) by ion implantation has been investigated. Two-dimensional (2D) process simulation and delineation...
ROENTGENSTRAHLQUELLE MIT EINER KLEINEN BRENNFLECKGROESSE (2003)
Frey, L., Lehrer, C., Hanke, R., Schmitt, P.
WO2003081631 A UPAB: 20031030 NOVELTY - The target device (21) is irradiated by a particle beam (e) for emission of X-ray radiation from the impact spot (11), within which a source for the X-ray...
Materials processing by focused ion-beams for TEM sample preparation and nanostructuring (2003)
Focused ion beams (FIB) with beam diameters of well below 100 nm found wide application in local materials. processing on sub micrometer scale. Gallium ions of energies of 1 to 50 keV are used to...
Development of enhanced depth-resolution technique for shallow dopant profiles (2002)
Fujita, M., Tajima, J., Nakagawa, T., Abo, S., Kinomura, A., Paszti, F., ...
Effect of barium contamination on gate oxide integrity in high-k DRAM (2002)
Boubekeur, H., Mikolajick, T., Nagel, N., Bauer, A., Frey, L., Ryssel, H.
Influence of photoresist pattern on charging damage during high current ion implantation (2002)
Dirnecker, T., Ruf, A., Frey, L., Beyer, A., Bauer, A.J., Henke, D., ...
The influence of photoresist pattern on charging damage of gate oxides during high current arsenic implantation is studied. Metal-oxide- semiconductor (MOS) capacitors of 10 mu m/sup 2/ active area...
Verkohltes Silizium. Neues Halbleitermaterial für die Leistungselektronik (2002)
Herausragende Materialeigenschaften machen Siliziumkarbid (SiC)zu einem nahezu idealen Halbleiter für leisungselektronische Bauelemente. SiC ermöglicht hochsperrende, durchlass- und...
MOCVD of titanium dioxide on the basis of new precursors (2002)
Leistner, T., Lehmbacher, K., Härter, P., Schmidt, C., Bauer, A.J., Frey, L., ...
Thin films with a considerably higher dielectric constant than silicon dioxide, for example titanium dioxide or titanium containing barium strontium titanate, can be used for dielectrics in...
Verfahren zur Herstellung einer hochtemperaturfesten Verbindung zwischen zwei Wafern (2002)
Kroener, F., Fischer, K., Frey, L.
DE 10055763 A UPAB: 20020802 NOVELTY - Production of a high temperature resistant joint between wafers comprises forming a liquid layer of alcohols and polymerized silicic acid molecules partially...
Platinum contamination issues in ferroelectric memories (2002)
Boubekeur, H., Mikolajick, T., Pamler, W., Hopfner, J., Frey, L., Ryssel, H.
Analysis of gratings induced in azo-dye doped liquid crystals (2001)
Frey, L., Kaczmarek, M., Jonathan, J. M., Roosen, G.
We investigate the formation of photoinduced gratings in a homeotropic film of nematic liquid crystal doped with methyl red. Using a grating translation technique, we determine the time evolution of...
Analysis of gratings induced in azo-dye doped liquid crystals (2001)
Frey, L., Kaczmarek, M., Jonathan, J-M., Roosen, G.
We investigate the formation of photoinduced gratings in a homeotropic film of nematic liquid crystal doped with methyl red. Using a grating translation technique, we determine the time evolution of...
Limitations of focused ion beam nanomachining (2001)
Lehrer, C., Frey, L., Petersen, S., Ryssel, H.
In this article, some limitations of the processing of structures with dimensions in the nanometer range by focused ion beams will be discussed. In order to enable exact depth control of nanometer...
High-resolution constant-height imaging with apertured silicon cantilever probes (2001)
Dziomba, T., Danzebrink, H.U., Lehrer, C., Frey, L., Sulzbach, T., Ohlsson, O.
We present high-resolution aperture probes based on noncontact silicon atomic force microscopy (AFM) cantilevers for simultaneous APM and near-infrared scanning near-field optical microscopy (SNOM)....
Barium, Strontium and Bismuth Contamination in CMOS Processes (2001)
Boubekeur, H., Mikolajick, T., Höpfner, J., Dehm, C., Pamler, W., Steiner, J., ...
Contamination aspects of ferroelectric (SrBi2Ta2O9) and high dielectric constant (Ba,Sr)TiO3 materials in CMOS processes were investigated in this paper. TXRF, VPD-TXRF, and ToF-SIMS were used to...
Impact of platinum contamination on ferroelectric memories (2001)
Boubekeur, H., Mikolajick, T., Nagel, N., Dehm, C., Pamler, W., Bauer, A., ...
The impact of platinum contamination on the breakdown properties of gate oxide is reported. Wafers were intentionally contaminated with 1x10(13) to 4x10(14) at/cm(2) Pt after a 7.5 nm gate oxide...
Field emitter array fabricated using focused ion and electron beam induced reaction (2000)
Yavas, O., Ochiai, C., Takai, M., Park, Y.K., Lehrer, C., Lipp, S., ...
Phosphorus ion shower implantation for special power IC applications (2000)
Kröner, F., Schork, R., Frey, L., Burenkov, A., Ryssel, H.
Ion shower implantation (ISI) shows advantages of both ion implantation and plasma immersion doping and is, therefore, a promising alternative doping method for high dose and low energy implants....
Jank, M.P.M., Lemberger, M., Frey, L., Ryssel, H.
For characterization of oxide damage created by through the gate implantation (TGI) of boron, we prepared samples that allowed us to investigate reliability degradation and intrinsic electron trap...
Aspects of barium contamination in high dielectric dynamic random-access memories (2000)
Boubekeur, H., Hopfner, J., Mikolajick, T., Dehm, C., Frey, L., Ryssel, H.
Comparison of beam-induced deposition using ion microprobe (1999)
Park, Y.S., Nagai, T., Takai, M., Lehrer, C., Frey, L., Ryssel, H.
The localized Pt deposition on Si by 30 keV Ga+ focused ion beam (FIB), 10 keV electron beam (EB) or dual beams (FIB and EB) using precursor gas has been compared by analysis using a 300 keV Be2+...
Biro, L.P., Mark, G.I., Gyulai, J., Rozlosnik, N., Kurti, J., Szabo, B., ...
Carbon nanotubes were evidenced by atomic force microscopy and scanning tunneling microscopy on highly oriented pyrolytic graphite irradiated with high energy ions (215 MeV Ne, 209 MeV Kr, 246 MeV...
MOCVD of ferroelectric thin films (1999)
Schmidt, C., Lehnert, W., Leistner, T., Frey, L., Ryssel, H.
Ferroelectric thin films of lead titanate (PbTiO3) and lead zirconate titanate (PZT) were grown in a cold-wall low-pressure chemical vapor deposition reactor on silicon substrates with diameters up...
Investigation of Cu films by focused ion beam induced deposition using nuclear microprobe (1999)
Park, Y.K., Takai, M., Lehrer, C., Frey, L., Ryssel, H.
The localized Cu deposition on Si by 30 keV Ga+ focused ion beam (FIB) using precursor gas has been investigated by a 300 keV Be2+ nuclear microprobe with a beam spot diameter of 80 nm. The Cu...
Impurity incorporation during beam assisted processing analyzed using nuclear microprobe (1999)
Park, Y.K., Takai, M., Lehrer, C., Frey, L., Ryssel, H.
Impurity incorporation due to localized beam processing by focused ion beams (FIBs) and electron beams (EBs) such as physical sputtering, gas-assisted etching (GAE) using iodine gas and beam-assisted...
Nano-slit probes for near-field optical microscopy fabricated by focused ion beams (1999)
Danzebrink, H.U., Dziomba, T., Sulzbach, T., Ohlsson, T., Lehrer, C., Frey, L.
Biro, L.P., Szabo, B., Mark, G.I., Gyulai, J., Havancsak, K., Kurti, J., ...
Scanning tunneling microscopy (STM) and atomic force microscopy (AFM) were used to investigate the surface of highly oriented pyrolytic graphite (HOPG) irradiated with 209 MeV Kr or 830 MeV U ions....
Biro, L.P., Mark, G.I., Gyulai, J., Havancszak, K., Lipp, S., Lehrer, C., ...
Carbon nanotubes (CNT) were produced by high energy, heavy ion irradiation (215 MeV Ne, 246 MeV Kr, 156 MeV Xe) of graphite. On samples irradiated with Kr and Xe ions large craters were found by...
Surface disorder production during plasma immersion implantation (1998)
Lohner, T., Khanh, N.Q., Petrik, P., Biro, L.P., Fried, M., Pinter, I., ...
Distortion of SIMS Profiles due to Ion Beam Mixing: Shallow Arsenic Implants in Silicon (1998)
Montandon, C., Burenkov, A., Frey, L., Pichler, P., Biersack, J.P.
SIMS (Secondary Ion Mass Spectroscopy) is extensively used in microelectronics in order to measure the depth profiles of dopants in silicon wafers. During the SIMS analysis, the sputtering ion beam...
Range and damage distributions in ultra low-energy boron ion implantation (1997)
Hatzopoulos, N., Suder, S., Donnelly, S.E., Armour, D.G., Panknin, D., ...
Biro, L.P., Gyulai, J., Havancsak, K., Didyk, A.Y., Bogen, S., Frey, L., ...
Si was irradiated with 209 MeV Kr ions on an (010) oriented surface. Then atomic force microscopy (AFM) was used to measure the roughness on the adjacent (100) plane (the original wafer surface). The...
Distortion of SIMS profiles due to ion beam mixing (1997)
Saggio, M., Montandon, C., Burenkov, A., Frey, L., Pichler, P.
Secondary ion mass spectroscopy (SIMS) is one of the most important tools in analyzing dopant profiles in silicon technology. During SIMS analysis, target atoms are sputtered by an ion beam so that,...
Lipp, S., Frey, L., Lehrer, C., Frank, B., Demm, E., Pauthner, S., ...
Focused ion beams are intensively used for device modification by local material removal and ion beam induced metal deposition. With shrinking dimensions on modern multilayer devices, the need for...
Strain profiles in phosphorus implanted /100/-silicon (1995)
Remmler, M., Frey, L., Horvath, Z.E., Ryssel, H.
Ion implantation induced strain in silicon was measured by high resolution X-ray diffractometry. [l00] oriented Si wafers were implanted with 80 keV P ions at doses below and above the amorphization...
Bogen, S., Frey, L., Herder, M., Ryssel, H.
Oxygen or carbon were implanted at an energy of 5 and 4 MeV into n- and p-type (100) Si. The implantation dose was 5.x10(15) square centimetre. Characterization of the recombination layers was...
Local material removal by focused ion beam milling and etching (1995)
Lipp, K., Frey, L., Franz, G., Demm, E., Petersen, S., Ryssel, H.
Focused ion beams (FIB) have drawn considerable interest as a tool for micromachining in the sub-micrometer regime with major applications in failure analysis and circuit repair. With shrinking...
Local material removal by focused ion beam milling and etching (1995)
Lipp, S., Frey, L., Franz, G., Demm, E., Petersen, S., Ryssel, H.
Focused ion beam (FIB) have drawn considerable interest as a tool for micromachining in the sub-micrometer regime with major applications in failure analysis and circuit repair. With shrinking...
Improved delineation technique for two dimensional dopant profiling (1995)
Gong, L., Petersen, S., Frey, L., Ryssel, H.
A chemical delineation technique suitable for two dimensional dopant profiling has been investigated and improved. The formation of equi-concentration lines in p-doped areas during chemical etching...
Gitterdeformation in Silicium nach Implantationen von Phosphor (1995)
Remmler, M., Frey, L., Ryssel, H.
Mit Hilfe eines hochauflösenden Röntgendiffraktometers wurden Proben monokristallinen Siliciums auf implantationsbedingte Gitterdeformation untersucht. Die Proben waren mit Energien von 80 keV, 570...
Comparison of retrograde and conventional p-wells in regard latch-up susceptibility (1995)
Bogen, S., Gong, L., Frey, L., Ryssel, H., Körber, K.
Test structures were designed and processed to investigate the effect of retrogade wells on latch-up susceptibility. A 600 keV boron implanation was used to substitute a conventional 80 keV implant...
Analysis of contamination - a must for ultraclean technology (1995)
Ryssel, H., Streckfuß, N., Aderhold, W., Berger, R., Falter, T., Frey, L.
Contamination analysis has become more and more important in recent years. The demands for purity of liquid chemicals, gases, wafers, and processing are increasing from generation to generation....
Practical aspects of ion beam analysis of semiconductor structures (1994)
Frey, L., Pichler, P., Kasko, I., Thies, I., Lipp, S., Streckfuß, N., ...
Ion beam analysis plays a major role in the analysis of semiconductor structures. It can provide fast and routine measurements for many problems, especially related to elemental profiling. The major...
Biro, L.P., Gyulai, J., Bogen, S., Frey, L., Ryssel, H.
SIMS measurements show that PA conditions are able to override differences in diffusion due to damage structure differences originating from 10, 20, 30, 40 keV or 40, 30, 20, 10 keV energy sequences...
Gong, L., Bogen, S., Frey, L., Jung, W., Ryssel, H.
In this paper, we have compared experimental range data and profiles of high energy implants with theoretical values and profiles predicted by LSS, TRIM and RAMM calculations. In order to simulate...
Photon assisted implantation -PAI- (1993)
Biro, L.P., Gyulai, J., Ryssel, H., Frey, L., Kormany, T., Tuan, N.M.
The junction depth reduction for B implanted under PA conditions in Si was investigated.It was found that low energy implantation and short annealing times promote higher values of junction depth...
A novel delineation technique for 2D-profiling of dopants in crystalline silicon (1993)
Gong, L., Frey, L., Bogen, S., Ryssel, H.
An optimized delineation. technique was described.Using this technique, up to three equi-concentration lines can be made visible by one delineation process with high local resolution.The asymmetrical...
High energy implantation of high10 B and high11 B into -100- silicon in channel and in random (1993)
Gong, L., Frey, L., Bogen, S., Ryssel, H.
Profiles of boron implants into the (100) direction of silicon and the range straggling for `B were presented.The electronic stopping power was determined and compared to theoretical data.Both,...
Effect of ion-beam mixing temperature on cobalt silicide formation (1993)
Kasko, I., Dehm, C., Frey, L., Ryssel, H.
In this work, the influence of ion-beam mixing at enhanced substrate temperatures on CoSi2 formation was investigated. For this purpose, 19nm Co layers were mixed using 1 x 10 high15 cm high-2, 60...
Contamination control and ultrasensitive chemical analysis (1993)
Ryssel, H., Frey, L., Streckfuß, N., Schork, R., Kroninger, F., Falter, T.
Requirements for low contamination processing in future device fabrication demand that the cleanliness of equipment and media be qualified and monitored. Advanced analytical methods for elemental...
High energy ion implantation for semiconductor application at Fraunhofer-AIS, Erlangen (1992)
Frey, L., Bogen, S., Gong, L., Jung, W., Gyulai, J., Ryssel, H.
A new high energy ion implanter for research and development in semiconductor technology was put into operation at the Fraunhofer Institute in Erlangen. The system is used for generation of ion beams...
Characterization of metal impurities in silicon-on-insulator material (1992)
Frey, L., Kroninger, F., Streckfuß, N., Ryssel, H.
Metal impurities in silicon-on-insulator material were characterized by total-reflection X-ray fluorescence spectroscopy (TXRFS). Wafers from different suppliers were analyzed. Surface concentrations...
Effect of oxygen on the formation of end-of-range disorder in implantation amorphized silicon (1991)
Frey, L., Khanh, N.Q., Gyulai, J., Lorenz, E.
Formation of End-of-Range (EOR) disorder was studied in (100)-oriented silicon, when subjected to amorphization by implantation of Gehighplus ions, followed by a 10 s Rapid Thermal Annealing (RTA) at...
Stomatologie / publie sous la direction de L. Frey et M. Dechaume (1939)
Incluye bibliografía e índice
Ferments, Especially Lactic Ferment in Oral Therapeutics. (1910)
Editors: Aug. 1859-July 1865, J. D. White, J. H. McQuillen, G. J. Ziegler.--Aug. 1865-Dec. 1871, J. H. McQuillen, G. J. Ziegler.--Jan. 1872-May 1891, J. W. White.--July 1891-Apr. 1930, E. C. Kirk...
Bringel, F, Frey, L, Boivin, S, Hubert, J C
A cluster of citrulline biosynthetic genes has been cloned and sequenced from a fragment of Lactobacillus plantarum CCM 1904 (ATCC 8014) DNA isolated as complementing a Bacillus subtilis argF...
Frey, L, Schmidt, J, Derksen, D J, Skipper, B
The appropriate use of emergency departments is of growing concern. By knowing which patients are more likely to make inappropriate visits to these departments, efforts can be directed to encourage...
Bringel, F, Frey, L, Boivin, S, Hubert, J C
A cluster of citrulline biosynthetic genes has been cloned and sequenced from a fragment of Lactobacillus plantarum CCM 1904 (ATCC 8014) DNA isolated as complementing a Bacillus subtilis argF...
Frey, L, Schmidt, J, Derksen, D J, Skipper, B
The appropriate use of emergency departments is of growing concern. By knowing which patients are more likely to make inappropriate visits to these departments, efforts can be directed to encourage...